In-situ Rapid Isiheial Pocessing of Thin Epitaxial Dieleciric Films on Silicon and Compound Semi Semiconductors

1986 ◽  
Vol 75 ◽  
Author(s):  
R. Singh ◽  
F. Radpour ◽  
J. Narayan ◽  
S. P. Joshi ◽  
M. Rahati ◽  
...  
Keyword(s):  
Isothermal Annealing ◽  
Structural Characteristics ◽  
Processing Technique ◽  
Dielectric Films ◽  
Light Sources ◽  
Incoherent Light ◽  
Beam System ◽  
Rapid Isothermal Processing

AbstracrWe have developed a new rapid isothermal processing technique for the deposition of epitaxial dielectric films (II–VIa fluorides and their mixtures) on silicon and ccmpound semiconductors. In this process, epitaxial dielectric films are deposited in an e-beam system at room teqperature and subsequently subjected to in-situ rapid isothermal annealing by using incoherent light sources incorporated in the e-beam system. Epitaxial dielectric films of CaF2 and CaxS1−xF2 have been deposited on Si, GaAs and InP. In this paper, prelimilifty results of electrical and structural characteristics of. epitaxial dielectric films on Si and cupourd semiconductors are presented.

Importance of the Photoeffects in Rapid Isothermal Processing (RIP)

1994 ◽  
Vol 342 ◽  
Author(s):  
R. Singh ◽  
J. Mavoori ◽  
R. P. S. Thakur ◽  
S. Narayanan
Keyword(s):  
Processing Time ◽  
Radiation Spectrum ◽  
Light Sources ◽  
Next Generation ◽  
Incoherent Light ◽  
Thermal Budget ◽  
Conventional Furnace ◽  
Fundamental Understanding ◽  
Lower Temperature ◽  
Rapid Isothermal Processing

ABSTRACTThere are fundamental differences between conventional furnace processing (CFP) and rapid isothermal processing (RIP). The radiation spectrum of a conventional furnace consists of photons in the infrared and longer wavelength regions, whereas the spectrum of the incoherent light sources used in RIP consist of some ultraviolet, visible, and infrared photons. As compared to CFP, the photophysical and photochemical effects associated with RIP provide the capability of lower temperature processing. Due to photoeffects in RIP, differences are observed in junction movement and defect evolution with different lamp configurations and different kinds of lamps having differing spectra. This implies that diffusion models, in addition to considering processing time and temperature, should also account for the lamp configurations and spectra of the heating sources. The fundamental understanding of photoeffects in RIP can be further exploited to reduce the overall thermal budget used in the manufacturing of semiconductor devices. In this paper we present our study of photoeffects in RIP, which can be of help in the design of the next generation of RIP equipment.

Glass-Forming Ability and Crystallization of High Purity Pd-Cu-Ni-P Alloy

2000 ◽  
Vol 644 ◽  
Author(s):  
Nobuyuki Nishiyama ◽  
Mitsuhide Matsushita ◽  
Akihisa Inoue
Keyword(s):  
High Purity ◽  
Isothermal Annealing ◽  
Glass Forming Ability ◽  
In Situ Tem ◽  
Nucleation Behavior ◽  
Spherical Region ◽  
Glass Forming ◽  
High Purity Alloy ◽  
Nose Temperature

AbstractGlass-forming ability, thermal stability and nucleation behavior of a Pd40Cu30Ni10P20 alloy prepared using a high purity polycrystalline phosphorus are investigated. The critical cooling rate for glass formation for the high purity alloy is the same as that for the previous result, but the improvement of undercooling reaches about 80 K as compared with the fluxed ordinary alloy. In comparison with the non-fluxed alloy, the solidified structure of the present highly purified alloy is significantly different. The non-fluxed sample shows the characteristic “island-like” structure consisted of acicular fcc-Pd2Ni2P solid solution and Cu3Pd intermetallic compound. These acicular phases appear to be caused by the growth of quenched-in nuclei. In the isothermal experiment, nucleus density exhibits time dependence even at 683 K near the nose temperature. It is assumed that the crystallization behavior for the highly purified alloy is closer to homogeneous nucleation from quenched-in nuclei dominant behavior. In order to investigate the nucleation behavior, in-situ TEM observation was carried out. Spherical Pd15P2 particle with a diameter about 15 nm is observed, and this spherical region repeats generation and annihilation during isothermal annealing. The reason for the high glass-forming ability is discussed on the basis of the obtained results.

Comparison of the Effect of Boron and Phosphorus Impurities on Solid Phase Epitaxial Regrowth of Amorphous Silicon

1989 ◽  
Vol 157 ◽  
Author(s):  
Young-Jin Jeon ◽  
M.F. Becker ◽  
R.M. Walser
Keyword(s):  
Amorphous Silicon ◽  
Isothermal Annealing ◽  
Solid Phase ◽  
Laser Interferometry ◽  
Electron Pairs ◽  
Quadratic Equations ◽  
Low Concentrations ◽  
Fractional Ionization ◽  
Reported Data

ABSTRACTThis work was concerned with comparing the relative effects of boron and phosphorus impurities on the solid phase epitaxial (SPE) regrowth rate of self-ion amorphized layers in silicon wafers with (100) orientation. We used previously reported data measured by in situ, high precision, cw laser interferometry during isothermal annealing for temperatures from 450°C to 590°C, and concentrations in the range from 7.8×1018 cm-3 to 5×l020 cm-3 for boron (NB), and from 5×l017 cm-3 to 3×1020 cm-3 for phosphorus (Np) impurities. The basis for the comparison was a recently developed model that extends the Spaepen-Turnbull model for silicon recrystallization to include ionization enhanced processes.The experimental data for bom boron and phosphorus exhibited the linear variation in regrowth rate expected for low concentrations of implanted hydrogenic impurities having a concentration-independent fractional ionization in amorphous silicon. In the linear range the relative enhanced regrowth rate produced by these impurities can be expressed as a product of their, relative fractional ionizations, and the relative amount the rate constant for reconstruction is altered by localizing an electron, or a hole, at the reconstruction site. Assuming that a localized hole and electron equally softened the potential barrier for reconstruction, the experimental results indicated that boron had an ?40 meV lower barrier to ionization in amorphous silicon than phosphorus.The variations in the SPE regrowth rates with higher concentrations of both implanted boron and phosphorus were well fit by quadratic equations, but with different curvatures (+ and - for B and P respectively). This result was interpreted to indicate that SPE regrowth was further enhanced by localized hole pairs, but retarded by localized electron pairs.

A study on the kinetics and thermal properties of polystyrene/diatomite nanocomposites prepared via in situ ATRP

2018 ◽  
Vol 33 (2) ◽  
pp. 180-197 ◽  
Author(s):  
Khezrollah Khezri ◽  
Yousef Fazli
Keyword(s):  
Molecular Weight ◽  
In Situ Polymerization ◽  
Structural Characteristics ◽  
Nitrogen Adsorption ◽  
Linear Increase ◽  
Size Exclusion ◽  
Scanning Calorimetry ◽  
Morphological Studies ◽  
Exclusion Chromatography

Pristine mesoporous diatomite was employed to prepare polystyrene/diatomite composites. Diatomite platelets were used for in situ polymerization of styrene by atom transfer radical polymerization to synthesize tailor-made polystyrene nanocomposites. X-Ray fluorescence spectrometer analysis and thermogravimetric analysis (TGA) were employed for evaluating some inherent properties of pristine diatomite platelets. Nitrogen adsorption/desorption isotherm is applied to examine surface area and structural characteristics of the diatomite platelets. Evaluation of pore size distribution and morphological studies were also performed by scanning and transmission electron microscopy. Conversion and molecular weight determinations were carried out using gas and size exclusion chromatography, respectively. Linear increase of ln ( M0/M) with time for all the samples shows that polymerization proceeds in a living manner. Addition of 3 wt% pristine mesoporous diatomite leads to an increase of conversion from 72% to 89%. Molecular weight of polystyrene chains increases from 11,326 g mol−1 to 14134 g mol−1 with the addition of 3 wt% pristine mesoporous diatomite; however, polydispersity index values increases from 1.13 to 1.38. Increasing thermal stability of the nanocomposites is demonstrated by TGA. Differential scanning calorimetry shows an increase in glass transition temperature from 81.9°C to 87.1°C by adding 3 wt% of mesoporous diatomite platelets.

Incoherent Light Sources

2007 ◽  
pp. 565-582 ◽  
Author(s):  
Dietrich Bertram ◽  
Matthias Born ◽  
Thomas Jüstel
Keyword(s):  
Light Sources ◽  
Incoherent Light

Incoherent Light Sources

2018 ◽  
pp. 561-578
Author(s):  
Zacarías Malacara-Hernández
Keyword(s):  
Light Sources ◽  
Incoherent Light

scholarly journals The Deformation Behavior and Bending Emissions of ZnO Microwire Affected by Deformation-Induced Defects and Thermal Tunneling Effect

Sensors ◽  
2021 ◽  
Vol 21 (17) ◽  
pp. 5887
Author(s):  
Linlin Shi ◽  
Hong Wang ◽  
Xiaohui Ma ◽  
Yunpeng Wang ◽  
Fei Wang ◽  
...  
Keyword(s):  
Room Temperature ◽  
Luminescent Properties ◽  
Tunneling Effect ◽  
Light Sources ◽  
Electrical Characteristics ◽  
Fundamental Research ◽  
Induced Defects ◽  
Theoretical Simulations ◽  
Bright Emission

The realization of electrically pumped emitters at micro and nanoscale, especially with flexibility or special shapes is still a goal for prospective fundamental research and application. Herein, zinc oxide (ZnO) microwires were produced to investigate the luminescent properties affected by stress. To exploit the initial stress, room temperature in situ elastic bending stress was applied on the microwires by squeezing between the two approaching electrodes. A novel unrecoverable deformation phenomenon was observed by applying a large enough voltage, resulting in the formation of additional defects at bent regions. The electrical characteristics of the microwire changed with the applied bending deformation due to the introduction of defects by stress. When the injection current exceeded certain values, bright emission was observed at bent regions, ZnO microwires showed illumination at the bent region priority to straight region. The bent emission can be attributed to the effect of thermal tunneling electroluminescence appeared primarily at bent regions. The physical mechanism of the observed thermoluminescence phenomena was analyzed using theoretical simulations. The realization of electrically induced deformation and the related bending emissions in single microwires shows the possibility to fabricate special-shaped light sources and offer a method to develop photoelectronic devices.

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