Deposition of Iron on Si(111)-(7×7): Photo- and Electron-Assisted Decomposition of Fe(CO)5

1986 ◽  
Vol 75 ◽  
Author(s):  
J. R. Swanson ◽  
C. M. Friend ◽  
Y. J. Chabal

AbstractLaser- and electron-assisted deposition of Fe on Si(111)-(7×7) surfaces using decomposition of Fe(CO)5 has been investigated with multiple internal reflection Fourier transform infrared, Auger electron and temperature programmed desorption spectroscopies and low energy electron diffraction under ultra-high vacuum conditions. No thermal reaction was apparent in temperature programmed desorption experiments: only molecular Fe(CO)5 desorption was observed at temperatures of 150 and 170 K, corresponding to desorption energies in the range of 7–10 kcal./mole. Fe(CO)5 decomposition could be induced using either incident 1.6 keV electrons or ultraviolet photons. Significant amounts of carbon were deposited from the electron induced decomposition, consistent with earlier reports on the Si(100) surface. In contrast, ultraviolet photolysis did not result in any detectable incorporation of carbon or oxygen into the iron deposits. No partially decarbonylated Fe(CO)x, x<5, fragments were detected subsequent to exposure to photons using infrared spectroscopy. However, a new, unresolved low frequency shoulder did appear in the infrared spectrum after exposing the Fe(CO)5 covered Si(111)-(7×7) crystal to the electron beam. Iron photodeposition was evident in the Auger electron spectra obtained subsequent to photolysis and annealing of the surface to either 300 K or 1000 K in order to desorb unreacted Fe(CO)5. These data suggest that there are no surface stable Fe(CO)x, x<5, species in the photodeposition process. Instead, photolysis yields Fe atoms directly, even at low temperatures. Annealing to temperatures on the order of 1000 K subsequent to iron deposition resulted in a significant decrease in the Fe:Si ratio as measured by Auger electron spectroscopy. In addition, CO could not be readsorbed on a surface where the Fe(CO)5 had been decomposed. This is attributed to dissolution of Fe into the bulk silicon crystal.

1998 ◽  
Vol 511 ◽  
Author(s):  
Li Chen ◽  
J. A. Kelber

ABSTRACTCarbon-Silicon polymeric films have been formed by electron beam bombardment (500eV) of molecularly adsorbed vinyl silane precursors under ultra-high vacuum (UHV) conditions. Temperature programmed desorption (TPD) studies show that polymerization is occurring via the vinyl groups, while Auger spectra show that the polymerized films have compositions very similar to the starting precursors; vinyltrichlorosilane (VTCS) or vinyltrimethylsilane(VTMS). VTCSderived films ˜ 100 Å thick show no reaction with Cu substrates and no diffusion of Cu until temperatures greater than 700 K, while Cu deposited on VTMS films on Al substrates show no diffusion prior to Al reaction/decomposition at 600 K. Auger and TPD studies also show that fluorocarbon precursors, such as perfluorobenzene can be incorporated into the films by e-beaminduced reactions, a first step in the controlled growth of adherent polymer films on unreactive substrates such as Cu.


1993 ◽  
Vol 334 ◽  
Author(s):  
Wen-Shryang Liu ◽  
Gregory B. Aupp

AbstractTemperature programmed desorption (TPD) studies in ultra high vacuum revealed that diethyltellurium (DETe) and dimethylcadmium (DMCd) adsorb weakly on clean Si(100) and desorb upon heating without decomposing. These precursors adsorb both weakly and strongly on CdTe(111)A, with DMCd exhibiting the stronger interaction with the surface than DETe. Dimethylcadmium partially decomposes to produce Cd adatoms; a large fraction of the excess Cd atoms desorb upon heating. In contrast, DETe desorbs without decomposing, suggesting that the rate limiting step in CdTe MOCVD on CdTe(111)A is surface decomposition of the tellurium alkyl.


1999 ◽  
Vol 564 ◽  
Author(s):  
L. Chen ◽  
B. Ekstrom ◽  
J. Kelber

AbstractWe report results of Auger electron spectroscopy (AES) and temperature programmed desorption (TPD) studies under ultra high vacuum (UHV) conditions which demonstrate that even submonolayer coverages of oxygen on Ta significantly degrade the strength of Cu/Ta chemical interactions, and affect the kinetics of Cu diffusion into bulk Ta. On clean Ta, monolayer coverages of Cu will de-wet only above 600 K. A partial monolayer of adsorbed oxygen (3L O2 at 300 K) results in a reduction of the de-wetting temperature to 500 K, while saturation oxygen coverage (10 L O2, 300 K) results in de-wetting at 400 K. Diffusion of Cu into the Ta substrate at 1100 K occurs only after a 300-second induction period at this temperature. The induction period increases to 600 sec for partially oxidized Ta and to 1200 sec for saturation oxygen coverage. TPD studies indicate no desorption of Cu for temperatures below 1300 K. The higher desorption temperature of Cu (compared to the 1150 K sublimation temperature) indicates that all the Cu originally deposited is now chemically bound to Ta.


2017 ◽  
Vol 608 ◽  
pp. A50 ◽  
Author(s):  
M. Bertin ◽  
M. Doronin ◽  
X. Michaut ◽  
L. Philippe ◽  
A. Markovits ◽  
...  

Context. Almost 20% of the ~200 different species detected in the interstellar and circumstellar media present a carbon atom linked to nitrogen by a triple bond. Of these 37 molecules, 30 are nitrile R-CN compounds, the remaining 7 belonging to the isonitrile R-NC family. How these species behave in their interactions with the grain surfaces is still an open question. Aims. In a previous work, we have investigated whether the difference between nitrile and isonitrile functional groups may induce differences in the adsorption energies of the related isomers at the surfaces of interstellar grains of various nature and morphologies. This study is a follow up of this work, where we focus on the adsorption on carbonaceous aromatic surfaces. Methods. The question is addressed by means of a concerted experimental and theoretical approach of the adsorption energies of CH3CN and CH3NC on the surface of graphite (with and without surface defects). The experimental determination of the molecule and surface interaction energies is carried out using temperature-programmed desorption in an ultra-high vacuum between 70 and 160 K. Theoretically, the question is addressed using first-principle periodic density functional theory to represent the organised solid support. Results. The adsorption energy of each compound is found to be very sensitive to the structural defects of the aromatic carbonaceous surface: these defects, expected to be present in a large numbers and great diversity on a realistic surface, significantly increase the average adsorption energies to more than 50% as compared to adsorption on perfect graphene planes. The most stable isomer (CH3CN) interacts more efficiently with the carbonaceous solid support than the higher energy isomer (CH3NC), however.


2018 ◽  
Vol 18 (06) ◽  
pp. 1850039
Author(s):  
Abderrezzaq Ziane ◽  
Mohamed Amrani ◽  
Abdelaziz Rabehi ◽  
Zineb Benamara

Au/GaN/GaAs Schottky diode created by the nitridation of n-GaAs substrate which was exposed to a flow of active nitrogen created by a discharge source with high voltage in ultra-high vacuum with two different thicknesses of GaN layers (0.7[Formula: see text]nm and 2.2[Formula: see text]nm), the I–V and capacitance–voltage (C–V) characteristics of the Au/n-GaN/n-GaAs structures were studied for low- and high-frequency at room temperature. The measurements of I–V of the Au/n-GaN/n-GaAs Schottky diode were found to be strongly dependent on bias voltage and nitridation process. The electrical parameters are bound by the thickness of the GaN layer. The capacitance curves depict a behavior indicating the presence of interface state density, especially in the low frequency. The interface states density was calculated using the high- and low-frequency capacitance curves and it has been shown that the interface states density decreases with increasing of nitridation of the GaAs.


Hydrogen absorption to give the dihydrides MH 2+1 containing interstitial hydrogen H i has been studied for the metals Gd, Dy, Er, Yb and Lu in the form of films deposited in ultra-high vacuum on glass. Film areas were determined by Kr adsorption, and hydrogen content, in particular inter­stitial hydrogen H i , characterized by gas uptake, temperature programmed desorption, electrical conductivity and work function measurements by the diode method. The catalytic activity of the dihydride films for the H 2 + D 2 → 2HD reaction was studied at a pressure of 1.1 Torr over 175-579 K, and at 273 K over 0.19-6.2 Torr. Arrhenius plots for the rate con­stant show a low temperature low activation energy region changing over at a temperature T c to a higher temperature higher activation energy régime, with T c on average for the five metals about 50 K below the tem­perature T max at which the interstitial hydrogen H i has disappeared. The suggested mechanisms are T < T c : D 2 + H i □ s → (D 2 H i )□ s → □ s D i + HD, (1) T > T c : D 2 + H 2 + 4□ s → 2(D i □ s ) (H i □ s ) → 4□ s + 2HD, (2) where H i □ s , D i □ s , denotes a hydrogen, deuterium, atom held on a surface octahedral site in the f. c. c. metal sublattice. These mechanisms agree with the observed approximate first-order pressure dependency down to 77 K. The rate constants at both 273 K (under T c ) and 573 K (over T c ) decrease over Gd, Dy, Er, to Yb, and rise again to Lu, and this is discussed in terms of the metal-hydrogen, H i □ s or D i □ s bond strength.


Carbon ◽  
1992 ◽  
Vol 30 (7) ◽  
pp. 995-1000 ◽  
Author(s):  
D. Cazorla-Amorós ◽  
A. Linares-Solano ◽  
C.Salinas-Martínez de Lecea ◽  
T. Kyotani ◽  
H. Yamashita ◽  
...  

1998 ◽  
Vol 53 (8) ◽  
pp. 679-683 ◽  
Author(s):  
Y. Waseda ◽  
S. Suzuki ◽  
K. Urbanb

Abstract This paper deals with the morphology and surface chemistry of faceted voids existing in singlequasicrystalline icosahedral Al70.5Pd21.0Mn8.5. By observation with a scanning electron microscope of surfaces obtained by cleavage of the quasicrystal, the habit planes of the dodecahedral voids were identified. The chemical surface composition of the void surface was determined by Auger electron spectroscopy after cleavage in ultra-high vacuum.


Author(s):  
P. Kruit

Introduction: Electron spectroscopy is a well established technique in physics and material science and merely adding the spatial resolution of a STEM would already open a new field of applications. However, by using the specific advantages of electron microscope optics and the expertise in thin specimen preparation of microscopists, electron spectroscopy in the STEM can yield information that cannot be obtained in any other way.Instrumentation: The feasibility of extracting a large portion of the Auger and secondary electrons from the magnetic field of an immersion condenser objective lens has now been demonstrated. The scheme involves a careful shaping of the magnetic field through which the electrons are guided to a deflector which separates the secondary beam from the primary beam. The parallelizing action of this field forces the electrons into a beam of small opening angle which can be accepted by traditional optics including an electrostatic energy analyser. Results reported in this paper are from a prototype instrument; energy analysers mounted on fully ultra high vacuum microscopes are now also in operation or will become operational very soon. To detect the secondary or Auger electron together with the primary electron which was responsible for its emission requires only small additions to the instrumentation. Single electron sensitivity in both the secondary electron detector and the EELS detector are of course necessary, but this can be done with standard detectors with a timing resolution of better than 5 ns. Commercial electronic equipment can then sort the coincident events.


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