Top Electrode Area Dependence on Displacement Property of Lead Zirconate Titanate Films Prepared by Chemical Solution Deposition Process

2002 ◽  
Vol 748 ◽  
Author(s):  
Takashi Iijima ◽  
Sachiko Ito ◽  
Hirofumi Matsuda
Keyword(s):  
Lead Zirconate Titanate ◽  
Ferroelectric Properties ◽  
Strain Curve ◽  
Deposition Process ◽  
Lead Zirconate ◽  
Test System ◽  
Piezoelectric Response ◽  
Hysteresis Curve ◽  
Electrode Diameter ◽  
Maximum Displacement

ABSTRACTEffects on ferroelectric and piezoelectric properties of top-electrode diameter variance from 80 to 8 μm were investigated using an AFM probing system connected with a ferroelectric test system with bipolar and unipolar signals at 5 Hz. The Pt and 1.2-μm-thick PZT layers were etched off to prepare Pt top electrode etched samples or Pt/PZT stack etched samples. In the case of bipolar measurement, the top electrode diameter did not affect ferroelectric properties, while the maximum displacement of the butterfly-shaped hysteresis curve, related with piezoelectric response, increased with decreasing top-electrode diameter. On the other hand, the longitudinal piezoelectric constant, AFM d33, calculated from the strain curve slope at 5 Hz, +5 V, increased with decreasing top-electrode diameter. The average value of the Pt/PZT stack-etched AFM d33 almost equals that of Pt-etched AFM d33. Average AFM d33 of the 8-μm-diameter Pt-etched and Pt/PZT stack-etched samples are 129 and 135 pm/V, respectively.

Piezoelectric Response of Lanthanum Doped Lead Zirconate Titanate Films for Micro Actuators Application

2008 ◽  
Vol 1129 ◽  
Author(s):  
Takashi Iijima ◽  
Bong-Yeon Lee ◽  
Seiji Fukuyama
Keyword(s):  
Lead Zirconate Titanate ◽  
Deposition Process ◽  
Lead Zirconate ◽  
Test System ◽  
Piezoelectric Response ◽  
Longitudinal Displacement ◽  
Hysteresis Curves ◽  
Si Substrates ◽  
Zirconate Titanate ◽  
La Substitution

AbstractLa doped lead zirconate titanate (PLZT) films are prepared using a chemical solution deposition process. The effect of La substitution on the piezoelectric response was investigated to clear the possibility of the micro actuator application for the PLZT films. Nominal compositions of the 10% Pb excess PLZT precursor solutions were controlled like La/Zr/Ti= 0/65/35, 3/65/35, 6/65/35, and 9/65/35. These precursor solutions were deposited on the Ir/Ti/SiO2/Si substrates, and the thickness of the PLZT films was 2μm. 10 to 20- μm- diameter Pt top electrodes are formed with a sputtering and a photolithography process. The polarization- field (P-E) hysteresis curves and the longitudinal displacement curves were measured with a twin beam laser interferometer connected with a ferroelectric test system. With increasing La substitution amount, the P-E hysteresis curves became slim shape, and remnant polarization (Pr) decreased. The hysteresis of the piezoelectric longitudinal displacement curves also decreased with increasing La substitution amount. The amount of the displacement under unipolar electric field showed a peak at La/Zr/Ti= 3/65/35. The calculated effective longitudinal piezoelectric constant (d33eff) is 129.2 pm/V at 3/65/35. This amount was relatively higher than that of PZT films at morphotropic phase boundary (MPB: 0/53/47) composition prepared the same film preparation process.

Crystallization Behavior and Electrical Properties of Wet-Chemically Deposited Lead Zirconate Titanate Thin Films

1993 ◽  
Vol 310 ◽  
Author(s):  
S. Merklein ◽  
D. Sporn ◽  
A. SchÖnecker
Keyword(s):  
Electrical Properties ◽  
Lead Zirconate Titanate ◽  
Lead Acetate ◽  
Ferroelectric Properties ◽  
Chemical Deposition ◽  
Deposition Process ◽  
Lead Zirconate ◽  
Lead Acetate Trihydrate ◽  
Acetate Trihydrate ◽  
Wet Chemical

AbstractA wet chemical deposition process for smooth and crackfree films in the system Pb(Zr 1-x Tix)O3 (PZT) has been developed. Final film thicknesses, reached with one coating step, were in the region of 1 μm. Starting from lead acetate trihydrate, zirconium- and titanium-n-propoxide, high molarity (> 2M) coating sols have been prepared that could be handled in air and were stable for more than 170 days.Films with compositions near the morphotropic phase boundary (x=47) and various lead contents were deposited on Pt-coated Si-wafers and Al2O3-substrates by a spin-on method. Wet films could be pyrolyzed and densified with a fast heat treatment without cracking. The crystallization of films into the desired perovskite structure started at comparatively low temperatures (ca. 530 °C) and proceeded rapidly at temperatures above 650 °C. A slight molar excess of lead and a proper heating rate were found to produce films with the best electrical properties. The films on platinized A12O3 substrates showed device-worthy dielectric and ferroelectric properties with typical values for Pn, EC, and ε, of 24 μC/cm2, 4.5 KV/mm and 650, respectively.

The Role of Processing Parameters in Variation of Microstruture of Sol-Gel Derived Lead Zirconate Titanate Thin Films

1998 ◽  
Vol 541 ◽  
Author(s):  
Chang Jung Kim ◽  
Tae-Young Kim ◽  
Ilsub Chung ◽  
In Kyung Yoo
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Secondary Phase ◽  
Processing Parameters ◽  
Lead Zirconate ◽  
Test System ◽  
Pzt Thin Films ◽  
Force Microscopy

AbstractThe PZT thin films were fabricated to investigate the effect of sol-gel processing parameters on the physical and the electrical properties. The films were made with different amount of excess Pb precursors and drying temperatures, and then annealed in various ambients. The physical properties of the films such as crystallinity and microstructure were evaluated using x-ray diffraction, scanning electron microscopy and atomic force microscopy. The ferroelectric properties and current density characteristics of the films were investigated using a standarized feiroelectric test system and pA meter, respectively. It is found that the drying temperature was playing a key role in the formation of the secondary phase on the PZT thin films. In addition, it turned out that the use of nitrogen as an annealing ambient promoted overall ferroelectric properties, when compared to oxygen ambients.

Growth, Microstructural and Ferroelectric Properties of PZT Films Prepared by Pulsed Laser Deposition Method

1998 ◽  
Vol 541 ◽  
Author(s):  
Ashok Kumar ◽  
M.R. Alam ◽  
M. Shamsuzzoha
Keyword(s):  
Lead Zirconate Titanate ◽  
Laser Energy ◽  
Ferroelectric Properties ◽  
Random Access ◽  
Ferroelectric Thin Film ◽  
Lead Zirconate ◽  
Test System ◽  
Cross Sectional ◽  
Preparation Conditions ◽  
Krf Excimer Laser

AbstractPb(ZrxTi1−xO3 (lead zirconate titanate or PZT) ferroelectric thin film capacitors are of considerable interest for the realization of memory devices such as nonvolatile random access memories (NVRAMs). The PZT capacitors were prepared on platinized silicon Pt/(100)Si using conducting oxide LaxSrl.xCOO (lanthanum strontium cobalt oxide or LSCO) as electrodes. The PZT and LSCO thin films were deposited by the KrF excimer laser ablation technique. The optimum preparation conditions such as oxygen pressure, laser energy influence and substrate temperature were investigated. The PZT and LSCO films grown on Pt/(100)Si are polycrystalline. The crystallographic properties of the films were determined using X-ray diffractometer (XRD) method. The cross-sectional transmission electron microscope showed very smooth interface among different layers of films. The electrical characterizations of the films including hysteresis loop, fatigue, and retention properties were determined by the RT66A Standardized Ferroelectric Test System.

Compositional Effects on the Piezoelectric and Ferroelectric Properties of Chemical Solution Deposited PZT Thin Films

2001 ◽  
Vol 688 ◽  
Author(s):  
Dong-Joo Kim ◽  
Jon-Paul Maria ◽  
Angus I. Kingon
Keyword(s):  
Domain Wall ◽  
Lead Zirconate Titanate ◽  
Wall Motion ◽  
Piezoelectric Coefficient ◽  
Small Deviation ◽  
Ferroelectric Properties ◽  
Domain Wall Motion ◽  
Lead Zirconate ◽  
Piezoelectric Response ◽  
Semi Empirical

AbstractThe piezoelectric, dielectric, and ferroelectric properties of highly (111)-textured polycrystalline lead zirconate titanate (PZT) films as a function of Zr/Ti composition have been investigated. The peak in piezoelectric coefficient at the morphotropic phase boundary (MPB) observed in bulk PZT ceramics has not been found in thin film PZTs. Measurement of the piezoelectric response as a function of AC amplitude suggests that non-180° domain wall motion in these films is negligible, indicating that the extrinsic contribution to the room temperature dielectric constant is dominated by only 180° domain wall motion. The semi-empirical phenomenological equation relating the piezoelectric coefficient to measured polarization and permittivity values is demonstrated to give an excellent description of the piezoelectric behavior in these films, assuming bulk electrostrictive coefficients. The small deviation between calculated and measured piezoelectric coefficients as well as the dependence of piezoelectric and polarization behavior on the external dc field, i.e., hysteresis loop, are suggested to be primarily due to backswitching of 180° domains.

Mathematical model to predict the characteristics of polarization in dielectric materials: The concept of piezoelectrcity and electrostriction

2019 ◽  
Author(s):  
Chem Int
Keyword(s):  
Mathematical Model ◽  
Electric Field ◽  
Lead Zirconate Titanate ◽  
Dielectric Material ◽  
Strain Curve ◽  
Dielectric Materials ◽  
Lead Zirconate ◽  
Simulation Software ◽  
Constitutive Law ◽  
Basic Material

Model was developed for the prediction of polarization characteristics in a dielectric material exhibiting piezoelectricity and electrostriction based on mathematical equations and MATLAB computer simulation software. The model was developed based on equations of polarization and piezoelectric constitutive law and the functional coefficient of Lead Zirconate Titanate (PZT) crystal material used was 2.3×10-6 m (thickness), the model further allows the input of basic material and calculation of parameters of applied voltage levels, applied stress, pressure, dielectric material properties and so on, to generate the polarization curve, strain curve and the expected deformation change in the material length charts. The mathematical model revealed that an application of 5 volts across the terminals of a 2.3×10-6 m thick dielectric material (PZT) predicted a 1.95×10-9 m change in length of the material, which indicates piezoelectric properties. Both polarization and electric field curve as well as strain and voltage curve were also generated and the result revealed a linear proportionality of the compared parameters, indicating a resultant increase in the electric field yields higher polarization of the dielectric materials atmosphere.

Improvement of Ferroelectric Properties of Lead Zirconate Titanate Thin Films by Ion-substitution using Rare-earth Cations

2004 ◽  
Vol 830 ◽  
Author(s):  
Hiroshi Nakaki ◽  
Hiroshi Uchida ◽  
Shoji Okamoto ◽  
Shintaro Yokoyama ◽  
Hiroshi Funakubo ◽  
...  
Keyword(s):  
Thin Films ◽  
Rare Earth ◽  
Lead Zirconate Titanate ◽  
Ferroelectric Property ◽  
Ferroelectric Properties ◽  
Lead Zirconate ◽  
Crystal Anisotropy ◽  
Pzt Film ◽  
Zirconate Titanate ◽  
Ion Substitution

ABSTRACTRare-earth-substituted tetragonal lead zirconate titanate thin films were synthesized for improving the ferroelectric property of conventional lead zirconate titanate. Thin films of Pb1.00REx (Zr0.40Ti0.60)1-(3x /4)O3 (x = 0.02, RE = Y, Dy, Er and Yb) were deposited on (111)Pt/Ti/SiO2/(100)Si substrates by a chemical solution deposition (CSD). B-site substitution using rare-earth cations described above enhanced the crystal anisotropy, i.e., ratio of PZT lattice parameters c/a. Remanent polarization (Pr) of PZT film was enhanced by Y3+-, Dy3+- and Er3+-substitution from 20 μC/cm2 up to 26, 25 and 26 μC/cm2 respectively, while ion substitution using Yb3+ degraded the Pr value down to 16 μC/cm2. These films had similar coercive fields (Ec) of around 100 kV/cm. Improving the ferroelectric property of PZT film by rare-earth-substitution would be ascribed to the enhancement of the crystal anisotropy. We concluded that ion substitution using some rare-earth cations, such as Y3+, Dy3+ or Er3+, is one of promising technique for improving the ferroelectric property of PZT film.

Sol-Gel Derived PZT Thick Films with Nano-Sized Microstructure

2002 ◽  
Vol 748 ◽  
Author(s):  
C. L. Zhao ◽  
Z. H. Wang ◽  
W. Zhu ◽  
O. K. Tan ◽  
H. H. Hng
Keyword(s):  
Lead Zirconate Titanate ◽  
Electromechanical Coupling ◽  
Thick Films ◽  
Sol Gel ◽  
Essential Element ◽  
Processing Parameters ◽  
Lead Zirconate ◽  
Piezoelectric Response ◽  
Coupling Coefficients ◽  
Pzt Films

ABSTRACTLead zirconate titanate (PZT) films are promising for acoustic micro-devices applications because of their extremely high electromechanical coupling coefficients and excellent piezoelectric response. Thicker PZT films are crucial for these acoustic applications. A hybrid sol-gel technology has been developed as a new approach to realize simple and cost-effective fabrication of high quality PZT thick films. In this paper, PZT53/47 thick films with a thickness of 5–50 μm are successfully deposited on Pt-coated silicon wafer by using the hybrid sol-gel technology. The obtained PZT thick films are dense, crack-free, and have a nano-sized microstructure. The processing parameters of this technology have been evaluated. The microstructure of the film has been observed using field-emission scanning electron microscopy and the crystallization process has been monitored by the X-ray diffraction. The thick films thus made are good candidates for fabrication of piezoelectric diaphragm which will be an essential element of microspeaker and microphone arrays.

scholarly journals Ferroelectric properties of lead‐zirconate‐titanate films prepared by laser ablation

1991 ◽  
Vol 58 (25) ◽  
pp. 2910-2912 ◽  
Author(s):  
Hideo Kidoh ◽  
Toshio Ogawa ◽  
Akiharu Morimoto ◽  
Tatsuo Shimizu
Keyword(s):  
Laser Ablation ◽  
Lead Zirconate Titanate ◽  
Ferroelectric Properties ◽  
Lead Zirconate ◽  
Zirconate Titanate
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