Thin-Film Indium Oxide Doped with Refractory Metals

2002 ◽  
Vol 747 ◽  
Author(s):  
Yuki Yoshida ◽  
Chollada Warmsingh ◽  
Timothy A. Gessert ◽  
John D. Perkins ◽  
David S. Ginley ◽  
...  
Keyword(s):  
Thin Film ◽  
Indium Oxide ◽  
Pulsed Laser ◽  
High Mobility ◽  
Yttria Stabilized Zirconia ◽  
Laser Deposition ◽  
Stabilized Zirconia ◽  
Post Deposition Annealing ◽  
Sputtered Films ◽  
Post Deposition

ABSTRACTThe electrical and structural properties of sputtered indium oxide (In2O3) thin films doped with Mo, Zr, and Ti were studied. Properties of these films are compared to undoped In2O3 and tin-doped In2O3 (ITO). The as-sputtered films, doped with Mo (IO:Mo), exhibited high mobility (45 cm2V-1s-1). Pulsed laser deposition (PLD) was also used to deposit IO:Mo films. The highest mobility achieved for an as-deposited PLD IO:Mo film deposited onto a glass substrate was 42.7 cm2V-1s-1. However, PLD IO:Mo films deposited on single-crystal yttria-stabilized zirconia (YSZ) substrates exhibited a higher mobility of 53.6 cm2V-1s-1 and a greater degree of structural orientation than the sputtered films. Following post-deposition annealing, both the sputtered films on glass, and the PLD films on YSZ, exhibited improved mobilities of 47 and 66 cm2V-1s-1, respectively.

Epitaxial ferroelectric Hf0.5Zr0.5O2 thin film on a buffered YSZ substrate through interface reaction

2018 ◽  
Vol 6 (34) ◽  
pp. 9224-9231 ◽  
Author(s):  
Tao Li ◽  
Nian Zhang ◽  
Zhenzhong Sun ◽  
Chunxiao Xie ◽  
Mao Ye ◽  
...  
Keyword(s):  
Thin Film ◽  
Pulsed Laser Deposition ◽  
Bottom Electrode ◽  
Interface Reaction ◽  
Pulsed Laser ◽  
Yttria Stabilized Zirconia ◽  
Laser Deposition ◽  
Stabilized Zirconia

In this study, we used pulsed laser deposition to successfully grow epitaxial Hf0.5Zr0.5O2 (HZO) films on (001)-, (011)- and (111)-oriented yttria-stabilized zirconia (YSZ) substrates using TiN as the bottom electrode.

Pulsed laser deposition of yttria stabilized zirconia based heterostructure

2014 ◽  
Vol 553 ◽  
pp. 98-103 ◽  
Author(s):  
R. Pascu ◽  
S. Somacescu ◽  
G. Epurescu ◽  
M. Filipescu ◽  
C. Luculescu ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Yttria Stabilized Zirconia ◽  
Laser Deposition ◽  
Stabilized Zirconia

Crack Development in Pulsed Laser-Deposited Pzt Thin Films

1992 ◽  
Vol 285 ◽  
Author(s):  
H. M. Lee ◽  
T. J. Chuang ◽  
C. K. Chiang ◽  
L. P. Cook ◽  
P. K. Schenck
Keyword(s):  
Film Thickness ◽  
Thermal Gradient ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Post Deposition Annealing ◽  
Pzt Thin Films ◽  
Pzt Thin Film ◽  
Parabolic Function ◽  
Induced Stresses ◽  
Post Deposition

ABSTRACTThe development of cracks in a PZT thin film prepared by pulsed laser deposition on an unheated Pt-coated silicon substrate, and subsequently crystallized by post-deposition annealing, was investigated as a function of film thickness. As deposited, the film was amorphous. The film was heated at 600°C to produce predominantly ferroelectric crystalline PZT. Spacing, width and morphology of cracks in the film followed a regular progression in which crack area decreased with decreasing film thickness. Data on area shrinkage, as deduced from crack area, were fit equally well as either a linear or a parabolic function of film thickness. It is suggested that crystallization-induced stresses rather than thermal-gradient related stresses, were dominant in the formation of the cracks, and that these stresses were modified by interaction with the substrate.

Sign in / Sign up

Export Citation Format

Share Document