Crack Development in Pulsed Laser-Deposited Pzt Thin Films

1992 ◽  
Vol 285 ◽  
Author(s):  
H. M. Lee ◽  
T. J. Chuang ◽  
C. K. Chiang ◽  
L. P. Cook ◽  
P. K. Schenck
Keyword(s):  
Film Thickness ◽  
Thermal Gradient ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Post Deposition Annealing ◽  
Pzt Thin Films ◽  
Pzt Thin Film ◽  
Parabolic Function ◽  
Induced Stresses ◽  
Post Deposition

ABSTRACTThe development of cracks in a PZT thin film prepared by pulsed laser deposition on an unheated Pt-coated silicon substrate, and subsequently crystallized by post-deposition annealing, was investigated as a function of film thickness. As deposited, the film was amorphous. The film was heated at 600°C to produce predominantly ferroelectric crystalline PZT. Spacing, width and morphology of cracks in the film followed a regular progression in which crack area decreased with decreasing film thickness. Data on area shrinkage, as deduced from crack area, were fit equally well as either a linear or a parabolic function of film thickness. It is suggested that crystallization-induced stresses rather than thermal-gradient related stresses, were dominant in the formation of the cracks, and that these stresses were modified by interaction with the substrate.

Post-Processing of Pulsed Laser-Deposited Pzt Thin Films

1991 ◽  
Vol 243 ◽  
Author(s):  
C. K. Chiang ◽  
W. Wong-Ng ◽  
L. P. Cook ◽  
P. K. Schenck ◽  
H. M. Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Amorphous Material ◽  
Ferroelectric Properties ◽  
Pulsed Laser ◽  
Linear Shrinkage ◽  
Laser Deposition ◽  
Amorphous Films ◽  
Pzt Thin Films ◽  
Si Substrates ◽  
Pzt Thin Film

AbstractPZT thin films were prepared by pulsed laser deposition on unheated Ptcoated Si substrates. As deposited, the films were amorphous. Films crystallized at 550 - 600 °C to produce predominantly crystalline ferroelectric PZT. Crystallization of the amorphous material was accompanied by a linear shrinkage of ∼2 %, as manifested in development of cracks in the film. Spacing, width and morphology of larger cracks followed a regular progression with decreasing film thickness. For film thicknesses less than 500 runm, much of the shrinkage was taken up by small, closely-spaced cracks of local extent. Implications for measurement of PZT thin film ferroelectric properties and processing are discussed.

Thin-Film Indium Oxide Doped with Refractory Metals

2002 ◽  
Vol 747 ◽  
Author(s):  
Yuki Yoshida ◽  
Chollada Warmsingh ◽  
Timothy A. Gessert ◽  
John D. Perkins ◽  
David S. Ginley ◽  
...  
Keyword(s):  
Thin Film ◽  
Indium Oxide ◽  
Pulsed Laser ◽  
High Mobility ◽  
Yttria Stabilized Zirconia ◽  
Laser Deposition ◽  
Stabilized Zirconia ◽  
Post Deposition Annealing ◽  
Sputtered Films ◽  
Post Deposition

ABSTRACTThe electrical and structural properties of sputtered indium oxide (In2O3) thin films doped with Mo, Zr, and Ti were studied. Properties of these films are compared to undoped In2O3 and tin-doped In2O3 (ITO). The as-sputtered films, doped with Mo (IO:Mo), exhibited high mobility (45 cm2V-1s-1). Pulsed laser deposition (PLD) was also used to deposit IO:Mo films. The highest mobility achieved for an as-deposited PLD IO:Mo film deposited onto a glass substrate was 42.7 cm2V-1s-1. However, PLD IO:Mo films deposited on single-crystal yttria-stabilized zirconia (YSZ) substrates exhibited a higher mobility of 53.6 cm2V-1s-1 and a greater degree of structural orientation than the sputtered films. Following post-deposition annealing, both the sputtered films on glass, and the PLD films on YSZ, exhibited improved mobilities of 47 and 66 cm2V-1s-1, respectively.

Colossal Magnetoresistance in Thick La0.7Ca0.3MnO3 Films

1995 ◽  
Vol 384 ◽  
Author(s):  
Randolph E. Treece ◽  
P. Dorsey ◽  
M. Rubinstein ◽  
J. M. Byers ◽  
J. S. Horwitz ◽  
...  
Keyword(s):  
Colossal Magnetoresistance ◽  
Single Phase ◽  
Laser Deposition ◽  
Orthorhombic Structure ◽  
X Ray Diffraction ◽  
Post Deposition Annealing ◽  
X Ray ◽  
Mr Effect ◽  
Deposited Films ◽  
Post Deposition

ABSTRACTThick films (0.6 and 2.0 μm) of the colossal magnetoresistance (CMR) material, La0.7Ca0.3MnO3 (LCMO), have been grown by pulsed laser deposition (PLD). The films were grown from single-phase LCMO targets in 100 mTorr 02 pressures and the material deposited on (100) LaAlO3 substrates at deposition temperatures of 800°C. The deposited films were characterized by X-ray diffraction (XRD), magnetic field-dependent resistivity, and Rutherford backscattering spectroscopy (RBS). The LCMO films were shown by XRD to adopt an orthorhombic structure. Brief post-deposition annealing led to ~50,000% and ~12,000% MR effect in the 0.6 μm and 2.0 μm films, respectively.

Crystallization of Molybdenum Disulfide Films Deposited by Pulsed Laser Ablation

1990 ◽  
Vol 201 ◽  
Author(s):  
J. S. Zabinski ◽  
M. S. Donley ◽  
P. J. John ◽  
V. J. Dyhouse ◽  
A. J. Safriet ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Raman Spectroscopy ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Emerging Technology ◽  
Substrate Material ◽  
Post Deposition Annealing ◽  
Film Properties ◽  
Deposition Parameters ◽  
Post Deposition

AbstractPulsed laser ablation (PLA) is an emerging technology that provides a mechanism to deposit lubricious films and to tailor film properties by the appropriate choice of substrate materials, deposition parameters and post deposition treatments. The properties of MoS2 films deposited by PLA are evaluated as a function of: (1) substrate material, (2) duration of post deposition annealing treatments using 248 nm laser radiation and (3) substrate temperature during deposition. The chemistry and crystal structure of the different films are determined using small angle X-ray diffraction (XRD), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS) and Rutherford backscattering spectroscopy (RBS). The tribological properties of the films are then evaluated as a function of their chemistry and crystal structure.

Correlation between Film Thickness and Critical Current Density of Sm1+xBa2-xCu3O6+δ Films Deposited by Pulsed Laser Deposition

2002 ◽  
Vol 41 (Part 2, No. 9A/B) ◽  
pp. L983-L985 ◽  
Author(s):  
Kimihiko Sudoh ◽  
Yusuke Ichino ◽  
Masakazu Itoh ◽  
Yutaka Yoshida ◽  
Yoshiaki Takai ◽  
...  
Keyword(s):  
Critical Current Density ◽  
Film Thickness ◽  
Pulsed Laser Deposition ◽  
Critical Current ◽  
Current Density ◽  
Pulsed Laser ◽  
Laser Deposition
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