Uniform Tetragonal WSi2 Layers Formed by RTA

1986 ◽  
Vol 74 ◽  
Author(s):  
M. Siegal ◽  
J. J. Santiago ◽  
J. Van Der Spiegel ◽  
W. R. Graham ◽  
M. Setton
Keyword(s):  
Thin Films ◽  
High Vacuum ◽  
Silicon Wafers ◽  
Tungsten Silicide ◽  
Type Silicon ◽  
Oxide Barrier ◽  
P Type

AbstractThin films of tungsten silicide with resistivities of 30 – 35 μΩ-cm have been formed by sputter depositing 71 nm of W metal onto (100) oriented, 5 Ω-cm, p-type silicon wafers that were etched in BOE 500 solution. The samples were fast radiatively processed in an RTA system under high vacuum for time anneals ranging from 15 – 50 seconds at a temperature of ∼ 1100°C. The inevitable oxide barrier at the interface is shown to decrease with increasing RTA time.

Electrochemically Deposited Cobalt Thin Films on p‐Type Silicon and Its Characterization

1995 ◽  
Vol 142 (11) ◽  
pp. 3889-3892 ◽  
Author(s):  
C. Wisniewski ◽  
I. Denicoló ◽  
I. A. Hümmelgen
Keyword(s):  
Thin Films ◽  
Type Silicon ◽  
Electrochemically Deposited ◽  
Cobalt Thin Films ◽  
P Type

Comparative Study of Pore Characterizations of Anodized Al–0.5 wt.% Cu Thin Films in Oxalic and Phosphoric Acids

NANO ◽  
2019 ◽  
Vol 14 (11) ◽  
pp. 1950140
Author(s):  
Alaa M. Abd-Elnaiem ◽  
S. Moustafa ◽  
T. B. Asafa
Keyword(s):  
Thin Films ◽  
Oxalic Acid ◽  
Phosphoric Acid ◽  
Etching Rate ◽  
Silicon Wafers ◽  
Average Particle ◽  
Text Type ◽  
Type Silicon ◽  
Steady State Current ◽  
Phosphoric Acids

Porous anodic alumina (PAA) thin films, having interconnected pores, were fabricated from Cu-doped aluminum films deposited on [Formula: see text]-type silicon wafers by anodization. The anodization was done at four different anodizing voltages (60[Formula: see text]V, 70[Formula: see text]V, 80[Formula: see text]V and 90[Formula: see text]V) in phosphoric acid and two voltages (60[Formula: see text]V and 70[Formula: see text]V) in oxalic acid. The aluminum and PAA samples were characterized by SEM and XRD while the pore arrangement, pore density, pore diameter, pore circularity and pore regularity were also analyzed. XRD spectra confirmed the aluminum to be crystalline with the dominant plane being (220), the Cu-rich phase have an average particle size of [Formula: see text][Formula: see text]nm uniformly distributed within the Al matrix of 0.4-[Formula: see text]m grain size. The steady-state current density through the anodization increased by 117% and 49% for oxalic and phosphoric acids, respectively, for 10[Formula: see text]V increase (from 60 to 70 V) in anodization voltage. Similarly, the etching rate increased by 100% for oxalic acid and by 40% for phosphoric acid which are responsible for 47% and 29% decreases in anodization duration, respectively. The highest value of circularity obtained for anodized Al–0.5[Formula: see text]wt.% Cu formed in oxalic acid at 60[Formula: see text]V was 0.86, and it was 0.80 for the phosphoric acid at 90[Formula: see text]V. Anodization of Al–0.5[Formula: see text]wt.% Cu films allows the formation of circular pores directly on [Formula: see text]-type silicon wafers which is of importance for future nanofabrication of advanced electronics. The results of anodized Al–0.5[Formula: see text]wt.% Cu thin film were compared with other anodized systems such as anodized pure Al and Al doped with Si.

Study of nanoparticles TiO2 thin films on p-type silicon substrate using different alcoholic solvents

2016 ◽  
Author(s):  
A. K. M. Muaz ◽  
U. Hashim ◽  
M. K. Md. Arshad ◽  
A. R. Ruslinda ◽  
R. M. Ayub ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Substrate ◽  
Tio2 Thin Films ◽  
Type Silicon ◽  
P Type

AC Photovoltaic Images of Thermally Oxidized P-Type Silicon Wafers Contaminated with Metals

1992 ◽  
Vol 31 (Part 1, No. 8) ◽  
pp. 2319-2321 ◽  
Author(s):  
Hirofumi Shimizu ◽  
Chusuke Munakata
Keyword(s):  
Silicon Wafers ◽  
Type Silicon ◽  
P Type

Electronic States of Oxygen-Free Dislocation Networks Produced by Direct Bonding of Silicon Wafers

2009 ◽  
Vol 156-158 ◽  
pp. 283-288 ◽  
Author(s):  
Maxim Trushin ◽  
O.F. Vyvenko ◽  
Teimuraz Mchedlidze ◽  
Oleg Kononchuk ◽  
Martin Kittler
Keyword(s):  
Oxygen Concentration ◽  
Dislocation Structure ◽  
Electronic States ◽  
Silicon Wafers ◽  
Experimental Investigations ◽  
Deformation Potential ◽  
Screw Dislocations ◽  
Type Silicon ◽  
Frenkel Effect ◽  
P Type

The results of experimental investigations of the dislocation-related DLTS-peaks originated from the dislocation networks (DN) are presented. Samples with DNs were produced by direct bonding of p-type silicon wafers and no enhancement of oxygen concentration was detected near the DN plane. Origins of the DLTS peaks were proposed and a correlation with the dislocation-related photoluminescence data was established based on known dislocation structure of the samples. Two types of shallow DLTS peaks exhibited Pool-Frenkel effect, which could be linked to the dislocation deformation potential. One of the shallow DLTS peaks was related to straight parts of screw dislocations and another - to the intersections of the dislocations.

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