Microstructural Characterization of High Dose Oxygen Implanted Silicon

1986 ◽  
Vol 74 ◽  
Author(s):  
J. L. Batstone ◽  
Alice E. White ◽  
K. T. Short ◽  
J. M. Gibson ◽  
D. C. Jacobson
Keyword(s):  
Microstructural Characterization ◽  
Amorphous Structure ◽  
Silicon On Insulator ◽  
High Dose ◽  
High Resolution Imaging ◽  
Buried Oxide ◽  
Transmission Electron ◽  
Resolution Imaging ◽  
Silicon On Insulator Technology

AbstractThe microstructure of oxygen implanted silicon for use in silicon-on- insulator technology has been examined by transmission electron microscopy. A variety of buried oxide layers prepared using oxygen doses below and above that required for stoichiometric SiO2 formation have been studied. High resolution imaging in crosssection has revealed exceptionally flat Si-SiO2 interfaces, comparable to the best thermally grown Si-SiO2 interfaces. Examination of as-implanted material shows a complex interwoven crystalline/amorphous structure which evolves during high temperature (1350–1400° C) annealing into a buried oxide layer.

TEM study of buried cobalt disilicide layers formed by ion implantation: Identification of cobalt monosilicide inclusions

1990 ◽  
Vol 48 (4) ◽  
pp. 576-577
Author(s):  
A. De Veirman ◽  
J. Van Landuyt ◽  
K.J. Reeson ◽  
R. Gwilliam ◽  
C. Jeynes ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Annealing Treatment ◽  
Silicon On Insulator ◽  
High Dose ◽  
Nitrogen Flow ◽  
Cobalt Disilicide ◽  
Transmission Electron ◽  
Beam Heating ◽  
Co Concentration ◽  
Silicon On Insulator Technology

In analogy to the formation of SIMOX (Separation by IMplanted OXygen) material which is presently the most promising silicon-on-insulator technology, high-dose ion implantation of cobalt in silicon is used to synthesise buried CoSi2 layers. So far, for high-dose ion implantation of Co in Si, only formation of CoSi2 is reported. In this paper it will be shown that CoSi inclusions occur when the stoichiometric Co concentration is exceeded at the peak of the Co distribution. 350 keV Co+ ions are implanted into (001) Si wafers to doses of 2, 4 and 7×l017 per cm2. During the implantation the wafer is kept at ≈ 550°C, using beam heating. The subsequent annealing treatment was performed in a conventional nitrogen flow furnace at 1000°C for 5 to 30 minutes (FA) or in a dual graphite strip annealer where isochronal 5s anneals at temperatures between 800°C and 1200°C (RTA) were performed. The implanted samples have been studied by means of Rutherford Backscattering Spectroscopy (RBS) and cross-section Transmission Electron Microscopy (XTEM).

Microstructural Characterization of Dehydrogenated Products of the LiBH4-YH3 Composite

2014 ◽  
Vol 20 (6) ◽  
pp. 1798-1804 ◽  
Author(s):  
Ji Woo Kim ◽  
Kee-Bum Kim ◽  
Jae-Hyeok Shim ◽  
Young Whan Cho ◽  
Kyu Hwan Oh
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Microstructural Characterization ◽  
Static Vacuum ◽  
Lithium Borohydride ◽  
Transmission Electron ◽  
Resolution Imaging ◽  
Yttrium Hydride ◽  
Beam Technique

AbstractThe dehydrogenated microstructure of the lithium borohydride-yttrium hydride (LiBH4-YH3) composite obtained at 350°C under 0.3 MPa of hydrogen and static vacuum was investigated by transmission electron microscopy combined with a focused ion beam technique. The dehydrogenation reaction between LiBH4 and YH3 into LiH and YB4 takes place under 0.3 MPa of hydrogen, which produces YB4 nano-crystallites that are uniformly distributed in the LiH matrix. This microstructural feature seems to be beneficial for rehydrogenation of the dehydrogenation products. On the other hand, the dehydrogenation process is incomplete under static vacuum, leading to the unreacted microstructure, where YH3 and YH2 crystallites are embedded in LiBH4 matrix. High resolution imaging confirmed the presence of crystalline B resulting from the self-decomposition of LiBH4. However, Li2B12H12, which is assumed to be present in the LiBH4 matrix, was not clearly observed.

Electrosynthesis and Microstructural Characterization of Anodic VOx Films

2000 ◽  
Vol 15 (7) ◽  
pp. 1483-1489 ◽  
Author(s):  
J. P. Schreckenbach ◽  
D. Butte ◽  
G. Marx ◽  
B. R. Johnson ◽  
W. M. Kriven
Keyword(s):  
Electron Microscopy ◽  
Photoelectron Spectroscopy ◽  
Microstructural Characterization ◽  
Amorphous Structure ◽  
Vanadium Oxides ◽  
Electrolyte System ◽  
Transmission Electron ◽  
Nanocrystalline Phases ◽  
Acetate Electrolyte

Anodic conversion films of vanadium oxides on vanadium were potentiodynamically generated at high voltages in an acetate electrolyte system. The microstructure of the anodic VOx coatings was characterized by surface and solid-state techniques such as scanning electron microscopy, transmission electron microscopy, Raman spectroscopy, and x-ray photoelectron spectroscopy. An amorphous structure is proposed in which network-forming [VO4] tetrahedra in various degrees of condensation are connected by distorted [VO5] and [VO6] units. Such polyhedra lead to the formation of nanocrystalline phases of stoichiometric and substoichiometric vanadium oxides, which were observed in the amorphous phase.

Microstructural characterization of a cast RENi5-based alloy

1993 ◽  
Vol 51 ◽  
pp. 1176-1177
Author(s):  
G. M. Micha ◽  
L. Zhang
Keyword(s):  
Electron Microscopy ◽  
Rare Earth ◽  
Microstructural Characterization ◽  
Binary Compound ◽  
Nickel Metal ◽  
Cast Material ◽  
Nickel Metal Hydride ◽  
Transmission Electron ◽  
Cast Condition

RENi5 (RE: rare earth) based alloys have been extensively evaluated for use as an electrode material for nickel-metal hydride batteries. A variety of alloys have been developed from the prototype intermetallic compound LaNi5. The use of mischmetal as a source of rare earth combined with transition metal and Al substitutions for Ni has caused the evolution of the alloy from a binary compound to one containing eight or more elements. This study evaluated the microstructural features of a complex commercial RENi5 based alloy using scanning and transmission electron microscopy.The alloy was evaluated in the as-cast condition. Its chemistry in at. pct. determined by bulk techniques was 12.1 La, 3.2 Ce, 1.5 Pr, 4.9 Nd, 50.2 Ni, 10.4 Co, 5.3 Mn and 2.0 Al. The as-cast material was of low strength, very brittle and contained a multitude of internal cracks. TEM foils could only be prepared by first embedding pieces of the alloy in epoxy.

Effect of Annealing on the Structure of Buried SiO2 Layers Formed By Elevated Temperature High Dose Oxygen Implantation

1985 ◽  
Vol 53 ◽  
Author(s):  
S.J. Krause ◽  
C.O. Jung ◽  
S.R. Wilson ◽  
R.P. Lorigan ◽  
M.E. Burnham
Keyword(s):  
Single Crystal ◽  
Oxide Layer ◽  
Elevated Temperatures ◽  
Superficial Layer ◽  
Silicon On Insulator ◽  
High Dose ◽  
Threading Dislocations ◽  
Heater Temperature ◽  
Buried Oxide ◽  
Structural Differences

ABSTRACTOxygen has been implanted into Si wafers at high doses and elevated temperatures to form a buried SiO2 layer for use in silicon-on-insulator (SOI) structures. Substrate heater temperatures have been varied (300, 400, 450 and 500°C) to determine the effect on the structure of the superficial Si layer through a processing cycle of implantation, annealing, and epitaxial growth. Transmission electron microscopy was used to characterize the structure of the superficial layer. The structure of the samples was examined after implantation, after annealing at 1150°C for 3 hours, and after growth of the epitaxial Si layer. There was a marked effect on the structure of the superficial Si layer due to varying substrate heater temperature during implantation. The single crystal structure of the superficial Si layer was preserved at all implantation temperatures from 300 to 500°C. At the highest heater temperature the superficial Si layer contained larger precipitates and fewer defects than did wafers implanted at lower temperatures. Annealing of the as-implanted wafers significantly reduced structural differences. All wafers had a region of large, amorphous 10 to 50 nm precipitates in the lower two-thirds of the superficial Si layer while in the upper third of the layer there were a few threading dislocations. In wafers implanted at lower temperatures the buried oxide grew at the top surface only. During epitaxial Si growth the buried oxide layer thinned and the precipitate region above and below the oxide layer thickened for all wafers. There were no significant structural differences of the epitaxial Si layer for wafers with different implantation temperatures. The epitaxial layer was high quality single crystal Si and contained a few threading dislocations. Overall, structural differences in the epitaxial Si layer due to differences in implantation temperature were minimal.

A review of the mechanical stressors efficiency applied to the ultra-thin body & buried oxide fully depleted silicon on insulator technology

2016 ◽  
Vol 117 ◽  
pp. 100-116 ◽  
Author(s):  
Pierre Morin ◽  
Sylvain Maitrejean ◽  
Frederic Allibert ◽  
Emmanuel Augendre ◽  
Qing Liu ◽  
...  
Keyword(s):  
Silicon On Insulator ◽  
Thin Body ◽  
Fully Depleted ◽  
Buried Oxide ◽  
Silicon On Insulator Technology

Microstructural Characterization of Ni-Al Alloyed Layer under Laser Rapid Solidification Condition

2011 ◽  
Vol 328-330 ◽  
pp. 565-568
Author(s):  
Yue Yang ◽  
Hua Wu
Keyword(s):  
Cross Section ◽  
Pulsed Laser ◽  
Microstructural Characterization ◽  
Eutectic Growth ◽  
Nickel Layer ◽  
Solidification Condition ◽  
Melted Zone ◽  
Transmission Electron ◽  
Pulsed Laser Irradiation

Nickel layer electroless deposited on aluminum substrate was alloyed by Nd-YAG pulsed laser irradiation. Solidification microstructure was characterized through cross section, showing typical microstructure that were located in upper and middle melted zone and interface of melted pool and substrate, respectively. The microstructure was analyzed by transmission electron microscopy (TEM). Followed by the observations, the eutectic growth process was analyzed.

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