Characteristic Comparison Between Ge-on-Insulator (GOI) and SI-on-Insulator (SOI) Beam-Induced Crystallization Mechanism

1986 ◽  
Vol 74 ◽  
Author(s):  
El-Hang Lee ◽  
M. Abdul Awal
Keyword(s):  
Crystal Growth ◽  
Crystallization Mechanism ◽  
Material Systems ◽  
Seeded Crystallization ◽  
First Time ◽  
Induced Crystallization ◽  
Traditional Understanding

AbstractCharacteristics of beam-recrystallized Si-on-insulator (SOT) and Ge-on-insulator (GOI) material systems are compared for the first time to gain complementary understanding of the crystallization mechanism that would benefit both systems. In general, GOI has been found to behave quite differently from SOI. In SOI, Si yields sub-boundaries; in GOI, Ge generates twinned or faceted crystals. In GOI, too, sub-boundary-like features were observed, but only occasionally in the midst of twinned crystals. Also observed in GOI was the phenomenon of seeded crystallization breakdown, where defect-free crystals from the seed abruptly turn into defect-laced crystals at a certain distance from the seed. This phenomenon is highly characteristic in SOI, but has never been reported for GOI. These findings are compared and discussed in light of the traditional understanding of crystal growth.

Large-sized crystal growth and piezoelectric properties of the single crystals of LiNa5Mo9O30

CrystEngComm ◽  
2021 ◽  
Vol 23 (9) ◽  
pp. 1912-1917
Author(s):  
Xiaoli Du ◽  
Fuan Liu ◽  
Zeliang Gao ◽  
Xiaojie Guo ◽  
Xiangmei Wang ◽  
...  
Keyword(s):  
Dipole Moment ◽  
Crystal Growth ◽  
Single Crystals ◽  
Piezoelectric Properties ◽  
First Time ◽  
Octahedral Distortion

Single crystals of LiNa5Mo9O30 with seeds in the a-, b- and c-directions were successfully grown using the TSSG method. Full sets of dielectric, elastic and piezoelectric matrices of the crystal were determined first time. The octahedral distortion and dipole moment are calculated to explain the piezoelectric properties.

Characterization of Ultra-Fast Phase Change Optical Disk with GaSb Material

2003 ◽  
Vol 803 ◽  
Author(s):  
Kazunori Ito ◽  
Hiroko Tashiro ◽  
Makoto Harigaya ◽  
Eiko Suzuki ◽  
Katsuhiko Tani ◽  
...  
Keyword(s):  
Growth Rate ◽  
Crystal Growth ◽  
Melting Point ◽  
Phase Change ◽  
Crystal Growth Rate ◽  
Crystallization Mechanism ◽  
Fast Phase ◽  
Optical Disks ◽  
Digital Versatile Disk

ABSTRACTWe studied the crystallization mechanism of ultra-fast phase change optical disks with recording layers made of GaSb material for digital versatile disk (DVD) systems. The results of a static recording test and an amorphous mark formation simulation suggest that GaSb maintains a high crystal growth rate even at temperatures 150 degrees lower than the material's melting point. Disks with recording layers made of this material have a write speed margin ranging from DVD 3× to 8× or more.

scholarly journals Fabrication of C60Fullerene Nanofibers by Volatile Diffusion Method

2013 ◽  
Vol 2013 ◽  
pp. 1-5 ◽  
Author(s):  
Bingzhe Wang ◽  
Xin Gao ◽  
Guangzhe Piao
Keyword(s):  
Crystal Growth ◽  
Self Assembly ◽  
Growth Process ◽  
Room Temperature ◽  
Isopropyl Alcohol ◽  
Diffusion Method ◽  
Short Fibers ◽  
Aspect Ratios ◽  
Crystal Growth Process ◽  
First Time

C60fullerene nanofibers (FNFs) were for the first time prepared by a volatile diffusion method using toluene as solvent and isopropyl alcohol as precipitation agent in room temperature, 25°C. FNFs with different lengths, aspect ratios, and morphologies could be fabricated by changing incubation time. Meanwhile, as for a crystal growth process, a possible mechanism of the formation of the crystal of FNFs was proposed in which the short and thin FNFs are the result of crystal growth, and self-assembly happens between the short fibers and thus leads to the formation of thick and long bundles of the FNFs.

Phase evolution and crystal growth of VO2 nanostructures under hydrothermal reactions

RSC Advances ◽  
2016 ◽  
Vol 6 (9) ◽  
pp. 7113-7120 ◽  
Author(s):  
Weilai Yu ◽  
Shuai Li ◽  
Chi Huang
Keyword(s):  
Crystal Growth ◽  
Phase Evolution ◽  
Hydrothermal Conditions ◽  
Hydrothermal Reactions ◽  
First Time

The phase evolution and crystal growth of VO2 nanostructures under hydrothermal conditions was comprehensively investigated and the feasibility of the Ostwald's step rules towards VO2 polymorph evolution was for the first time demonstrated.

A surface-enhanced Raman scattering active core/shell structure based on enzyme-guided crystal growth for bisphenol A detection

2018 ◽  
Vol 10 (31) ◽  
pp. 3878-3883 ◽  
Author(s):  
Zhou Xu ◽  
Rong Wang ◽  
Bo Mei ◽  
Li Ding ◽  
Libing Wang ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Raman Scattering ◽  
Surface Enhanced Raman Scattering ◽  
Active Core ◽  
Surface Enhanced ◽  
Surface Enhanced Raman ◽  
Sers Detection ◽  
Enhanced Raman Scattering ◽  
Bisphenol A Detection ◽  
First Time

Herein, a universal surface-enhanced Raman scattering (SERS) detection platform based on enzyme-guided crystal growth has been fabricated for the first time.

Perovskite CsPbBr3 crystals: growth and applications

2020 ◽  
Vol 8 (19) ◽  
pp. 6326-6341
Author(s):  
Jiaoxian Yu ◽  
Guangxia Liu ◽  
Chengmin Chen ◽  
Yan Li ◽  
Meirong Xu ◽  
...  
Keyword(s):  
Crystal Growth ◽  
First Time

This review for the first time systematically summarizes the latest research advances of perovskite CsPbBr3 crystal growth and its applications.

A New Field-Aided Germanium-Induced Lateral Crystallization of Silicon

2001 ◽  
Vol 664 ◽  
Author(s):  
Kianoush Naeli ◽  
Shamsoddin Mohajerzadeh ◽  
Ali Khakifirooz ◽  
Saber Haji ◽  
Ebrahim A. Soleimani
Keyword(s):  
Electric Field ◽  
Grain Growth ◽  
Negative Electrode ◽  
Crystallization Rate ◽  
Lateral Growth ◽  
Annealing Temperatures ◽  
Lateral Crystallization ◽  
Si Films ◽  
First Time ◽  
Induced Crystallization

ABSTRACTThe effect of an electric field on germanium-seeded lateral crystallization of a-Si is studied for the first time and compared to this effect in Ni-induced lateral growth. While the crystallization rate is lower when Ge is used as the nucleation seed and annealing should be done at higher temperatures, filed-aided crystallization shows a similar behavior to that observed for Ni-induced crystallization. Optical microscopy results indicate that grain growth starting from the negative electrode occurs in Si films at annealing temperatures higher than 480°C, while the applied electric field ranges form 200 to 1400V/cm. SEM was also used to confirm the crystallinity of the films.

Measurement of Growth Kinetics of Deeply Undercooled Zr50Cu50 Melt by Electromagnetic Levitation Technique

2014 ◽  
Vol 513-517 ◽  
pp. 56-59
Author(s):  
Li Xin Li ◽  
Jun Liang Zhao ◽  
Xue Mao Guan
Keyword(s):  
Crystal Growth ◽  
Growth Kinetics ◽  
Electromagnetic Levitation ◽  
Maximum Growth ◽  
Maximum Growth Rate ◽  
Diffusion Controlled ◽  
Crystal Growth Mechanism ◽  
Crystal Growth Kinetics ◽  
First Time ◽  
Kinetics Of

The crystal growth kinetics in the deeply undercooled Zr50Cu50 melt was studied with the electromagnetic levitation technique. The maximum growth rate umax was, for the first time, demonstrated in undercooled metal and alloy melts, and this allowed us to construct the complete profile of crystal growth kinetics in the whole undercooling region of Zr50Cu50 melt. In deep undercooling region near glass transition, the diffusion-controlled crystal growth mechanism accounted for the growth kinetics, while at lower undercooling the profile around umax remarkably differed from what the classical growth theory covers.

Laser-Induced Crystallization and Crystal Growth

2011 ◽  
Vol 6 (11) ◽  
pp. 2878-2889 ◽  
Author(s):  
Teruki Sugiyama ◽  
Hiroshi Masuhara
Keyword(s):  
Crystal Growth ◽  
Induced Crystallization
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