Smooth Silicide Formation by Ion Beam Mixing of Ti/Si-Layers

1986 ◽  
Vol 74 ◽  
Author(s):  
K. Kohlhof ◽  
S. Mantl ◽  
B. Stritzker
Keyword(s):  
Ion Beam ◽  
Liquid Nitrogen Temperature ◽  
Silicide Formation ◽  
Furnace Annealing ◽  
Ion Beam Mixing ◽  
X Ray ◽  
Surfaces And Interfaces ◽  
Conventional Furnace ◽  
Conventional Furnace Annealing ◽  
Substrate Temperatures

AbstractIon beam mixing experiments of Ti-Si layers have been performed with Kr ions of 250 keV energy and doses ranging from 7 1015 to 7 1016 cm-2 at temperatures between liquid nitrogen temperature and 450°C. At substrate temperatures below 120°C no silicide formation could be detected. Only weak mixing at the Ti-Si interface is observed. At temperatures above 120°C the formation of TiSi2 could be verified by Rutherford backscattering and X-ray diffractometry. Layers of TiSi2 produced by ion beam mixing show smooth surfaces in contrast to those prepared by conventional furnace annealing. Those display rough surfaces and interfaces.

omparisons of Silicide Formation by Rapid Thermal Annealing and Conventional Furnace Annealing

1987 ◽  
Vol 92 ◽  
Author(s):  
E. Ma ◽  
M. Natan ◽  
B.S. Lim ◽  
M-A. Nicolet
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Silicide Formation ◽  
X Ray Diffraction ◽  
Furnace Annealing ◽  
Cross Sectional ◽  
Conventional Furnace ◽  
Diffusion Controlled ◽  
Conventional Furnace Annealing ◽  
Kinetics Of

ABSTRACTSilicide formation induced by rapid thermal annealing (RTA) and conventional furnace annealing (CFA) in bilayers of sequentially deposited films of amorphous silicon and polycrystalline Co or Ni is studied with RBS, X-ray diffraction and TEM. Particular attention is paid to the reliability of the RTA temperature measurements in the study of the growth kinetics of the first interfacial compound, Co2Si and Ni2Si, for both RTA and CFA. It is found that the same diffusion-controlled kinetics applies for the silicide formation by RTA in argon and CFA in vacuum with a common activation energy of 2.1+0.2eV for Co2Si and 1.3+0.2eV for Ni Si. Co and Ni atoms are the dominant diffusing species; during silicide formation by both RTA and CFA. The microstructures of the Ni-silicide formed by the two annealing techniques, however, differs considerably from each other, as revealed by cross-sectional TEM studies.

Mixing and Demixing of Cu-Mo

1998 ◽  
Vol 540 ◽  
Author(s):  
L. C. Wei ◽  
R. S. Averback
Keyword(s):  
Phase Separation ◽  
Liquid Nitrogen ◽  
Ion Beam ◽  
Liquid Nitrogen Temperature ◽  
X Ray Diffraction ◽  
Maximum Solubility ◽  
Ion Beam Mixing ◽  
Rich Phase ◽  
X Ray ◽  
Higher Temperature

AbstractIon beam mixing of Cu/Mo multilayer samples and demixing of Cu-Mo alloy samples were examined as functions of temperature and ion mass. Even at liquid nitrogen temperature, the mixing of one component in other was very small under 1.0 MeV Kr irradiation. The maximum solubility was about 10%. Irradiation of homogeneous Cu-Mo alloys under the same conditions, moreover, led to phase separation. These conclusions were deduced from bulk X-ray diffraction measurements and corroborated by EXAFS examination. The maximum solubility obtained by irradiating multilayer samples occurred at about 600 K. At lower or higher temperature, the solubility of Cu in Mo-rich phase was lower. A model based on the ballistic difflusion explains these results.

Ion beam mixing of Pd/V superlattices studied by X-ray diffractometry

1989 ◽  
Vol 213 (2-3) ◽  
pp. A230
Author(s):  
M. StróŻak ◽  
P. MikoŁajczak ◽  
M. Subotowicz
Keyword(s):  
Ion Beam ◽  
Ion Beam Mixing ◽  
X Ray

Diffusion of A Deposited GeSe Film in GaAs using Ion-Beam Mixing

1985 ◽  
Vol 45 ◽  
Author(s):  
N. J. Kepler ◽  
N. W. Cheung
Keyword(s):  
Integrated Circuits ◽  
Ohmic Contacts ◽  
Ion Beam ◽  
Threshold Temperature ◽  
Electrical Characteristics ◽  
Electrical Measurements ◽  
Furnace Annealing ◽  
Ion Beam Mixing ◽  
Heavily Doped ◽  
And Diffusion

ABSTRACTIon-beam mixing and rapid thermal annealing (RTA) techniques are used to form shallow and heavily-doped n+ layers in undoped GaAs. RTA reduces surface degradation and improves crystalline quality compared to lengthy thermal cycles, although furnace annealing producesidentical electrical characteristics. Ion-beam mixing has only a small effect on the diffusion of a deposited GeSe film, because the damage created by implantation is repaired during RTA before significant diffusion occurs. We define a threshold temperature representing the onset of significant electrical activation and/or diffusion, and propose a model relating the annealing, activation, and diffusion temperatures for the GeSe/GaAs system. RBS. SIMS, and electrical measurements show that extremely shallow layers with a sheet resistivity as low as 1480/El can be formed in GaAs by diffusion from a GeSe source. This technique has potential application to the formation of shallow ohmic contacts for GaAs integrated circuits.

Rapid Optical Annealing for Improved GaAs Fet Uniformity

1985 ◽  
Vol 52 ◽  
Author(s):  
Thomas E. Kazior ◽  
Kamal Tabatabaie-Alavi
Keyword(s):  
Low Noise ◽  
Drift Mobility ◽  
Gate Length ◽  
Furnace Annealing ◽  
Zero Bias ◽  
Conventional Furnace ◽  
Conventional Furnace Annealing ◽  
Performance Results ◽  
Doping Profiles ◽  
Excellent Reproducibility

ABSTRACTAn Eaton Nova Rapid Optical Annealer (ROA 400) has been used to activate n and n+ Si implants for use in power and low noise FET structures for GaAs MMIC's. PECVD SiN capped 3" SI GaAs wafers were annealed at temperatures ranging from 800 to 970 °C for times ranging from 0 (transient light pulse) to 20 sec. Doping profiles were determined using a Polaron concentration profiler; FATFET's were used for measuring drift mobility; and short gate (l.0μm gate length) FET's were fabricated to establish activation uniformity and to determine d.c. and r.f. performance. Results have indicated peak implant activation as high as 90% and electron mobilities of up to 4700cm2/V-sec for carrier concentrations of 1.3×1017/cm3 – results comparable to conventional furnace annealing. The most significant improvement of optical annealing comes in device uniformity. Saturated current uniformities of < ±3% have been achieved over 3" wafers with excellent reproducibility from wafer to wafer. Power FET structures with zero bias gm of 120mS/mm with uniformities of <±5mS/mm have been measured. R.f. measurements on these devices yielded output powers of >500mW/mm with power added efficiencies as high as 35%.

X-ray absorption spectroscopy of Ag-Cr and Pd-Cr alloys formed by ion-beam-mixing

2000 ◽  
Vol 70 (1) ◽  
pp. 59-63 ◽  
Author(s):  
Y.S. Lee ◽  
K.Y. Lim ◽  
Y.D. Chung ◽  
C.N. Whang ◽  
Y. Jeon
Keyword(s):  
Absorption Spectroscopy ◽  
Ion Beam ◽  
Ion Beam Mixing ◽  
X Ray ◽  
X Ray Absorption
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