Via hole filling with gold melting by KrF excimer laser irradiation

1989 ◽  
Vol 7 (1) ◽  
pp. 127 ◽  
Author(s):  
W. Spiess
Keyword(s):  
Laser Irradiation ◽  
Excimer Laser ◽  
Hole Filling ◽  
Excimer Laser Irradiation ◽  
Via Hole ◽  
Krf Excimer Laser

Plugging of Al Films Into Submicron Diameter Via Holes by Excimer Laser Irradiation

1986 ◽  
Vol 74 ◽  
Author(s):  
R. Mukai ◽  
N. Sasaki ◽  
M. Nakano
Keyword(s):  
Aspect Ratio ◽  
Integrated Circuits ◽  
Laser Irradiation ◽  
Excimer Laser ◽  
Aluminum Film ◽  
Hole Filling ◽  
Aluminum Films ◽  
Via Holes ◽  
Excimer Laser Irradiation ◽  
Via Hole

AbstractVia-hole filling technique by momentarily melting an aluminum film has been developed, whereby planarization of aluminum films for multilevel interconnects on integrated circuits can be achieved. The melting is performed with an optical pulse irradiation from an ArF excimer laser without the problem of junction spiking. This technique is applicable to filling submicron-diameter vias having a diameter of 0.6μm with 0.7μm depth(aspect ratio:∼1.2). Very high aspect ratio(2.0) via-hole filling is achieved by heating the sample. During the laser irradiation, the sample substrate was kept at 300°C.

scholarly journals Formation of Varistor Layer at the Surface of SrTiO3-Based Ceramics by KrF Excimer Laser Irradiation.

1999 ◽  
Vol 107 (1252) ◽  
pp. 1229-1231 ◽  
Author(s):  
Jong-Won YOON ◽  
Katsuki HIGAKI ◽  
Masaru MIYAYAMA ◽  
Tetsuichi KUDO
Keyword(s):  
Laser Irradiation ◽  
Excimer Laser ◽  
Excimer Laser Irradiation ◽  
Krf Excimer Laser

Improvement of resistance to corrosion of stainless steel 304 in acid solutions by simultaneous deposition with doping of Si using KrF excimer laser

1990 ◽  
Vol 5 (12) ◽  
pp. 2835-2840 ◽  
Author(s):  
Koji Sugioka ◽  
Hideo Tashiro ◽  
Koichi Toyoda ◽  
Hideyuki Murakami ◽  
Hiroshi Takai
Keyword(s):  
Stainless Steel ◽  
Laser Irradiation ◽  
Excimer Laser ◽  
Polarization Resistance ◽  
Cathodic Polarization ◽  
Acid Solutions ◽  
Stainless Steel 304 ◽  
Quantitative Verification ◽  
Excimer Laser Irradiation ◽  
Krf Excimer Laser

The chemical stability of the surface of stainless steel (SUS) 304 in acid immersion tests is greatly improved by the laser implant-deposition (LID) process, i.e., the simultaneous deposition and incorporation of silicon by KrF excimer laser irradiation. The etching depths of the treated samples in 1.32 N HCl solution are substantially zero at the laser irradiation conditions of more than 40 pulses and of more than 400 mJ/cm2 at the surface. By the quantitative verification of cathodic polarization in 1 N H2SO4, the highest polarization resistance is estimated to be 26.7 times that of the nontreated sample.

Improved Abruptness of Si/Sin Interface by ArF Excimer-Laser Pre-Annealing to Sin

1994 ◽  
Vol 345 ◽  
Author(s):  
Yasutaka Uchida ◽  
Masakiyo Matsumura
Keyword(s):  
Laser Irradiation ◽  
Excimer Laser ◽  
Field Effect ◽  
Field Effect Mobility ◽  
Resolution Limit ◽  
Laser Recrystallization ◽  
Excimer Laser Irradiation ◽  
Arf Excimer Laser ◽  
Krf Excimer Laser ◽  
Film Annealing

AbstractXPS measurement showed that undesirable SiNH component was reduced drastically from the low-temperature deposited SiN surface by intense ArF excimer-laser irradiation. Although the improved layer was as thin as 15nm, it was very effective to stop diffusion of N atoms from the bottom SiN layer to the top Si layer during the excimer-laser recrystallization step. N-diffused Si layer at the Si/SiN interface was less than the XPS resolution limit for the pre-annealed SiN structure, but about 5nm thick. As a result, the field-effect mobility of the poly-Si/SiN TFT was increased drastically by laser-irradiation to SiN film. Annealing characteristics are also presented for the various SiN film thicknesses and for both the ArF and KrF excimer-laser lights.

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