Pulsed Laser Induced Melt and Phase Transformation of Ni Silicide Layers on Si Substrate

1986 ◽  
Vol 74 ◽  
Author(s):  
P. Baeri ◽  
M. G. Grimaldi ◽  
F. Priolo ◽  
E. Rimini ◽  
A. G. Cullis ◽  
...  
Keyword(s):  
Eutectic Temperature ◽  
Complex Structure ◽  
Pulsed Laser ◽  
Laser Pulses ◽  
Si Substrate ◽  
Time Resolved ◽  
Si Substrates ◽  
Congruent Melting Temperature ◽  
Transmission Electron ◽  
Subsequent Propagation

AbstractThermally grown Ni2 Si and NiSi2 layers on <111> Si substrates were irradiated by 40 ns Nd laser pulses in the energy density range 0.3–2.0 J/cm2. The samples were analyzed by time-resolved reflectivity, 2.0 MeV He+ Rutherford backscattering in combination with channeling and by transmission electron microscopy. In the NiSi2/Si system the melt starts at the free surface (1280 K) and propagates towards the inside. Dissolution of substrate silicon atoms occurs when the silicon temperature reaches the liquidus temperature (1400 K). In the Ni2Si/Si samples the melt starts instead at the interface when it reaches the eutectic temperature (1250 K). The subsequent propagation towards the surface is limited by the mass transport of silicon atoms to maintain a composition near that of the eutectic. In some cases the surface may melt also at the congruent melting temperature (1570 K), giving rise after solidification to a quite complex structure. The different behaviour of the two silicides/silicon systems is explained in terms of phase diagram.

The Transition Between Amorphous Regrowth and Explosive Crystallization

1986 ◽  
Vol 74 ◽  
Author(s):  
J. J. P. Bruines ◽  
R. P. M. van Hal ◽  
B. H. Koek ◽  
M. P. A. Viegers ◽  
H. M. J. Boots
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Temperature Distribution ◽  
Laser Pulses ◽  
Si Substrate ◽  
Time Resolved ◽  
Explosive Crystallization ◽  
Transmission Electron ◽  
Amorphous Si ◽  
Substrate Temperatures

AbstractThe transition between amorphous regrowth and explosive crystallization of a 220nm thick amorphous Si layer on a crystalline Si substrate has been studied using time-resolved reflectivity, transmission electron microscopy, and Rutherford backscattering spectroscopy. Upon irradiation by 7.5ns FWHM pulses from a frequency-doubled Nd:YAG laser, interferences in the reflectivity indicate growth of amorphous Si from the surface. The observation of a narrow Cu peak, buried below the surface, points towards solidification from both the rear and the front. Transmission electron microscopy studies revealed the occurrence of small patches of polycrystalline Si. The relative amount of this polycrystalline Si is increased by longer laser pulses, higher substrate temperatures, and thicker amorphous Si layers. The results are discussed in terms of the temperature distribution and the time available for the nucleation of polycrystalline Si at the liquid-solid interface.

Pulsed Laser Melting of Amorphous Silicon: Time-Resolved and Post-Irradiation Studies

1983 ◽  
Vol 23 ◽  
Author(s):  
D. H. Lowndes ◽  
R. F. Wood ◽  
C. W. White ◽  
J. Narayan
Keyword(s):  
Pulsed Laser ◽  
Threshold Value ◽  
Dynamical Response ◽  
Cross Sectional ◽  
Time Resolved ◽  
Model Calculations ◽  
Fine Grained ◽  
Transmission Electron ◽  
Incident Laser Pulse ◽  
Thermal Melting

ABSTRACTMeasurements of the time of the onset of melting of self-implantation amorphized (a) Si, during an incident laser pulse, have been combined with modified melting model calculations and measurements of surface melt duration to demonstrate that the thermal conductivity, Ka, of a-Si is very low (≃0.02 W/cm-K). Ka is also shown to be the dominant parameter determining the dynamical response of ionimplanted Si to pulsed laser radiation; the latent heat and melting temperature of a-Si are relatively unimportant. Cross-sectional transmission electron micrographs on implantation-amorphized Si layers of several different thicknesses show that for energy densities less than the threshold value for complete annealing there are usually two distinct regions in the re-solidified a-Si, consisting of fine-grained and large-grained polycrystalline Si, respectively. The presence of the fine-grained poly-Si suggests that bulk nucleation occurs directly from the highly undercooled liquid phase. Thermal melting model calculations suggest that the nucleation temperature, Tn is ≃1200°C.

scholarly journals Characterization of Gaas/Si/GaAs Heterointerfaces

1989 ◽  
Vol 148 ◽  
Author(s):  
Zuzanna Liliental-Weber ◽  
Raymond P. Mariella
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Low Temperature ◽  
Defect Density ◽  
Si Substrate ◽  
Reverse Polarity ◽  
Si Substrates ◽  
Transmission Electron ◽  
Metal Semiconductor Metal

ABSTRACTTransmission electron microscopy of GaAs grown on Si for metal-semiconductor-metal photodetectors is presented in this paper. Two kinds of samples are compared: GaAs grown on a 15 Å Si epilayer grown on GaAs, and GaAs grown at low temperature (300°C) on Si substrates. It is shown that the GaAs epitaxial layer grown on thin Si layer has reverse polarity to the substrate (antiphase relation). Higher defect density is observed for GaAs grown on Si substrate. This higher defect density correlates with an increased device speed, but with reduced sensitivity.

Time-Resolved X-Ray Studies During Pulsed-Laser Irradiation of Ge

1984 ◽  
Vol 35 ◽  
Author(s):  
J.Z. Tischler ◽  
B.C. Larson ◽  
D.M. Mills
Keyword(s):  
Melting Point ◽  
Laser Irradiation ◽  
Pulsed Laser ◽  
Laser Pulses ◽  
High Energy ◽  
Measured Temperature ◽  
Time Resolved ◽  
Synchrotron Source ◽  
X Ray ◽  
Pulsed Laser Irradiation

ABSTRACTSynchrotron x-ray pulses from the Cornell High Energy Synchrotron Source (CHESS) have been used to carry out nanosecond resolution measurements of the temperature distrubutions in Ge during UV pulsed-laser irradiation. KrF (249 nm) laser pulses of 25 ns FWHM with an energy density of 0.6 J/cm2 were used. The temperatures were determined from x-ray Bragg profile measurements of thermal expansion induced strain on <111> oriented Ge. The data indicate the presence of a liquid-solid interface near the melting point, and large (1500-4500°C/pm) temperature gradients in the solid; these Ge results are analagous to previous ones for Si. The measured temperature distributions are compared with those obtained from heat flow calculations, and the overheating and undercooling of the interface relative to the equilibrium melting point are discussed.

scholarly journals O-Band Emitting InAs Quantum Dots Grown by MOCVD on a 300 mm Ge-Buffered Si (001) Substrate

Nanomaterials ◽  
2020 ◽  
Vol 10 (12) ◽  
pp. 2450
Author(s):  
Oumaima Abouzaid ◽  
Hussein Mehdi ◽  
Mickael Martin ◽  
Jérémy Moeyaert ◽  
Bassem Salem ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Chemical Vapor ◽  
Lattice Parameter ◽  
Organic Chemical ◽  
Silicon Substrates ◽  
Wafer Level ◽  
Si Substrate ◽  
Si Substrates ◽  
Transmission Electron ◽  
Metal Organic

The epitaxy of III-V semiconductors on silicon substrates remains challenging because of lattice parameter and material polarity differences. In this work, we report on the Metal Organic Chemical Vapor Deposition (MOCVD) and characterization of InAs/GaAs Quantum Dots (QDs) epitaxially grown on quasi-nominal 300 mm Ge/Si(001) and GaAs(001) substrates. QD properties were studied by Atomic Force Microscopy (AFM) and Photoluminescence (PL) spectroscopy. A wafer level µPL mapping of the entire 300 mm Ge/Si substrate shows the homogeneity of the three-stacked InAs QDs emitting at 1.30 ± 0.04 µm at room temperature. The correlation between PL spectroscopy and numerical modeling revealed, in accordance with transmission electron microscopy images, that buried QDs had a truncated pyramidal shape with base sides and heights around 29 and 4 nm, respectively. InAs QDs on Ge/Si substrate had the same shape as QDs on GaAs substrates, with a slightly increased size and reduced luminescence intensity. Our results suggest that 1.3 μm emitting InAs QDs quantum dots can be successfully grown on CMOS compatible Ge/Si substrates.

Time Resolved Tem of Laser-Induced Phase Transitions in a-Ce And a-Si/Al-Films

1986 ◽  
Vol 71 ◽  
Author(s):  
O. Bostanjoglo ◽  
F. E. Endruschat ◽  
W. Tornow
Keyword(s):  
Phase Transitions ◽  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Amorphous Germanium ◽  
Time Resolved ◽  
Pulsed Laser Annealing ◽  
Transmission Electron ◽  
Potential Applications

AbstractThis paper presents an improved new method for studying the dynamics of laser induced phase transitions down to the submicron-nanosecond scale by means of a modified commercial Transmission Electron Microscope (TEM) /1/. Results on Pulsed Laser Annealing (PLA) of amorphous Germanium and a-Si/Al films are described. Potential applications and limits of this method are briefly discussed.

Conductive LaNiO3 Electrode Grown by Pulsed Laser Ablation on Si Substrate

1997 ◽  
Vol 12 (4) ◽  
pp. 931-935 ◽  
Author(s):  
Li Sun ◽  
Tao Yu ◽  
Yan-Feng Chen ◽  
Jun Zhou ◽  
Nai-Ben Ming
Keyword(s):  
Laser Ablation ◽  
Metalorganic Chemical Vapor Deposition ◽  
Pulsed Laser ◽  
Chemical Vapor ◽  
Pulsed Laser Ablation ◽  
Si Substrate ◽  
Si Substrates ◽  
Electron Probe Microanalyzer ◽  
Promising Electrode Material ◽  
Si Wafer

Using the pulsed laser ablation (PLA) technique, conductive LaNiO3 thin films have been successfully grown on (001) Si substrates. The XRD θ-2θ scan patterns indicate a preferential (110) orientation, and the electron probe microanalyzer (EPMA) investigations show that the three elements La, Ni, and O distribute uniformly in the films. The resistivity of the as-deposited LaNiO3 films display a metallic character. Polycrystalline PbTiO3films are deposited by metalorganic chemical vapor deposition (MOCVD) on these LaNiO3 electrodes. Ferroelectricity measurements of the PbTiO3/LaNiO3 heterostructure prove LaNiO3 to be a promising electrode material in the integration of ferroelectrics and Si wafer.

3C-SiC Heteroepitaxy on (100), (111) and (110) Si Using Trichlorosilane (TCS) as the Silicon Precursor.

2008 ◽  
Vol 600-603 ◽  
pp. 243-246 ◽  
Author(s):  
Ruggero Anzalone ◽  
Andrea Severino ◽  
Giuseppe D'Arrigo ◽  
Corrado Bongiorno ◽  
Patrick Fiorenza ◽  
...  
Keyword(s):  
Growth Process ◽  
Heteroepitaxial Growth ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
Tem Analysis ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force ◽  
Transmission Electron ◽  
The Impact

The aim of this work is to improve the heteroepitaxial growth process of 3C-SiC on Si substrates using Trichlorosilane (SiHCl3) as the silicon growth precursor. With this precursor it has been shown that it is possible to simultaneously increase the growth rate of the process and avoid the nucleation of silicon droplets in the gas phase. Growth experiments were conducted on three (3) Si substrate orientations in order to assess the impact of the Si substrate on the resulting 3C-SiC film. X-ray Diffraction (XRD), Atomic Force Microscopy (AFM) and Transmission Electron Microscopy (TEM) analysis show the important role of the substrate orientation for the growth process. The different orientation of the substrate modifies the morphology of the 3C-SiC crystalline structure, mostly by changing the density of micro-twins and stacking faults inside the film.

Pulsed Laser Mixing of Metal Overlayers on Ceramics

1988 ◽  
Vol 100 ◽  
Author(s):  
R. K. Singh ◽  
N. Biunno ◽  
J. Narayan
Keyword(s):  
Electron Microscopy ◽  
Laser Irradiation ◽  
Pulsed Laser ◽  
Laser Pulses ◽  
Intense Laser ◽  
Interfacial Layers ◽  
Transmission Electron ◽  
Modification Technique ◽  
Mixed Layers ◽  
Metal Overlayers

ABSTRACTPulsed laser mixing has been used as surface modification technique for the improvement in the mechanical properties of ceramics. Thin metallic layers of nickel were deposited on structural silicon nitride and were irradiated with Xenon Chloride (XeCl) laser pulses. The laser parameters were optimized to lead to the formation of mixed layers. The mixed interfacial layers were analyzed using Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM) and Rutherford Backscattering (RBS) techniques. Detailed heat flow calculations were performed to simulate the effects of intense laser irradiation on metal coated ceramic structures. The melt lifetimes and the interfacial temperatures obtained using these calculations, were applied to understand the laser mixing phenomena occuring in these layered structures. Thermodynamics of chemical reactions between the metal overlayers and the substrate were done to predict the formation of mixed interfacial layers during laser irradiation.

Plume and Jetting Regimes in a Laser Based Forward Transfer Process as Observed by Time-Resolved Optical Microscopy

2001 ◽  
Vol 698 ◽  
Author(s):  
D. Young ◽  
R. C. Y. Auyeung ◽  
A. Piqué ◽  
D. B. Chrisey ◽  
H. Denham ◽  
...  
Keyword(s):  
Viscous Fluid ◽  
Optical Microscopy ◽  
Transfer Process ◽  
High Speed ◽  
Pulsed Laser ◽  
Laser Pulses ◽  
Laser Evaporation ◽  
Direct Write ◽  
Time Resolved ◽  
Forward Transfer

ABSTRACTMatrix-Assisted Pulsed Laser Evaporation Direct-Write was investigated by ultra high-speed optical microscopy. A layer of viscous fluid was irradiated with 355nm, 30 ns laser pulses in a laser-forward transfer configuration. The fluid response as a function of fluence was studied, and several distinct regimes of behavior were observed: plume, jetting and sub-threshold. However, the transition between plume and jetting regimes was not readily evident in a study of transfer pixel area vs. fluence, which may be explained by material-substrate interactions.

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