Conductive LaNiO3 Electrode Grown by Pulsed Laser Ablation on Si Substrate

1997 ◽  
Vol 12 (4) ◽  
pp. 931-935 ◽  
Author(s):  
Li Sun ◽  
Tao Yu ◽  
Yan-Feng Chen ◽  
Jun Zhou ◽  
Nai-Ben Ming
Keyword(s):  
Laser Ablation ◽  
Metalorganic Chemical Vapor Deposition ◽  
Pulsed Laser ◽  
Chemical Vapor ◽  
Pulsed Laser Ablation ◽  
Si Substrate ◽  
Si Substrates ◽  
Electron Probe Microanalyzer ◽  
Promising Electrode Material ◽  
Si Wafer

Using the pulsed laser ablation (PLA) technique, conductive LaNiO3 thin films have been successfully grown on (001) Si substrates. The XRD θ-2θ scan patterns indicate a preferential (110) orientation, and the electron probe microanalyzer (EPMA) investigations show that the three elements La, Ni, and O distribute uniformly in the films. The resistivity of the as-deposited LaNiO3 films display a metallic character. Polycrystalline PbTiO3films are deposited by metalorganic chemical vapor deposition (MOCVD) on these LaNiO3 electrodes. Ferroelectricity measurements of the PbTiO3/LaNiO3 heterostructure prove LaNiO3 to be a promising electrode material in the integration of ferroelectrics and Si wafer.

Highly OrientedPb(Zr,Ti)O3Thin Films Prepared by Pulsed Laser Ablation on GaAs and Si Substrates with MgO Buffer Layer

1995 ◽  
Vol 34 (Part 1, No. 9B) ◽  
pp. 5154-5157 ◽  
Author(s):  
Atsushi Masuda ◽  
Yasuhiro Yamanaka ◽  
Mitsutoshi Tazoe ◽  
Yasuto Yonezawa ◽  
Akiharu Morimoto ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Buffer Layer ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Si Substrates

scholarly journals Synthesis of gold nanoparticles by laser ablation on porous silicon for sensing CO2 gas

2018 ◽  
Vol 16 (36) ◽  
pp. 1-10
Author(s):  
Uday Muhsin Nayef
Keyword(s):  
Laser Ablation ◽  
Porous Silicon ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
X Ray Diffraction ◽  
Laser Ablation In Liquid ◽  
Co2 Gas ◽  
X Ray ◽  
P Type ◽  
Si Wafer

In this research, porous silicon (PS) prepared by anodization etching on surface of single crystalline p-type Si wafer, then Gold nanoparticle (AuNPs) prepared by pulsed laser ablation in liquid. NPs deposited on PS layer by drop casting. The morphology of PS, AuNPs and AuNPs/PS samples were examined by AFM. The crystallization of this sample was characterized by X-ray diffraction (XRD). The electrical properties and sensitivity to CO2 gas were investigated to Al/AuNPs/PS/c-Si/Al, we found that AuNPs plays crucial role to enhance this properties.

Silicon Nanocrystallite Light Emitting Devices Fabricated by Full Pulsed-Laser-Ablation Process

2000 ◽  
Vol 638 ◽  
Author(s):  
Yuka Yamada ◽  
Toshiharu Makino ◽  
Nobuyasu Suzuki ◽  
Takehito Yoshida
Keyword(s):  
Laser Ablation ◽  
Energy Gap ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Si Substrates ◽  
Laser Ablation Process ◽  
Active Layers ◽  
Narrow Bandwidth

AbstractWe have developed silicon (Si) nanocrystallite light-emitting devices synthesized by a novel integrated process in which a size-controlling unit of differential mobility analyzer (DMA) is combined to a nanocrystallite formation unit of pulsed laser ablation (PLA). The size-controlled Si nanocrystallites as active layers have been deposited on Si substrates, and have been covered with stoichiometric indium oxide (In2O3) thin films synthesized also by the PLA process. The electroluminescence (EL) spectra had a narrow bandwidth of 0.15 eV peaked at slightly higher energy region (1.17 eV) than the bulk Si energy gap (1.10 eV), at room temperature.

Study of the growth of TiO2 on A12O3 by pulsed-laser ablation

1994 ◽  
Vol 52 ◽  
pp. 642-643
Author(s):  
M. W. Bench ◽  
C.B. Carter
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Pulsed Laser ◽  
Chemical Vapor ◽  
Pulsed Laser Ablation ◽  
Organic Chemical ◽  
Wide Range ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition ◽  
Deposition Techniques

There has been an increasing interest in recent years in the growth of epitactic oxide thin films for use in a variety of technological applications, including optical and electronic devices. A number of fundamental aspects of the growth of TiO2 films on alumina substrates by metal-organic chemical vapor deposition have been reported by Chang et al. For the case of MgO, Hesse et al. demonstrated the epitactic growth by pulsed-laser deposition of YBa2Cu3O7-x on (001) MgO passivated by a layer of the inverse spinel Mg2TiO4. The Mg2TiO4 layer was formed directly by a vapor-phase solid-state reaction during the deposition by e-beam evaporation of TiO2 onto heated MgO substrates. In other studies, TiO2 thin films have been grown using a variety of deposition techniques. For the growth of oxide materials in general, pulsed-laser ablation is a viable means of growing films, and allows materials with a wide range of stoichiometrics to be produced.

Sign in / Sign up

Export Citation Format

Share Document