Experimental Studies and Physical Model of Efficient, Tunable Injection Using Tunnel-Transparent Dielectric Contacts on Polymer Light-Emitting Devices

2002 ◽  
Vol 734 ◽  
Author(s):  
Ludmila Bakueva ◽  
Sergei Musikhin ◽  
Edward H. Sargent ◽  
Alexander Shik

ABSTRACTMost conducting polymers used for light-emitting devices have a small electron affinity, creating a high barrier for electron injection resulting in low injection efficiency. To improve injection characteristics, we fabricated and investigated multi-layer contacts with a tunneltransparent dielectric layer of nanometer thickness. Polymer layers were prepared by spin coating, and dielectric and metallic contact layers subsequently grown by vacuum deposition. Samples with such multi-layer cathodes demonstrated a current-voltage characteristic with negative differential resistance. At larger applied voltage, electroluminescence was observed with an efficiency larger than for a simple cathode of the same metal. We have developed a model to describe double injection through multi-layer contacts which explains these salient observed features. The increase in injection efficiency is caused by the voltage drop at the dielectric layer, shifting the metal Fermi level relative to the polymer molecular orbitals responsible for carrier transport. The negative differential resistance is explained by the strong dependence of dielectric tunnel transparency on voltage, a dependence which is qualitatively different for electrons and holes. Further flexibility in the functional characteristics of the injecting contacts is achieved through the use of an additional thin metallic layer playing the role of a base electrode, similar to hot-electron transistors with metallic base.

2018 ◽  
Vol 6 (8) ◽  
pp. 1926-1932 ◽  
Author(s):  
Qin Zhang ◽  
Shufen Chen ◽  
Shuai Zhang ◽  
Wenjuan Shang ◽  
Lihui Liu ◽  
...  

Current annealing method was used to eliminate the negative differential resistance and hysteresis in graphene OLEDs.


2001 ◽  
Vol 708 ◽  
Author(s):  
Ludmila Bakueva ◽  
Sergei Musikhin ◽  
Edward H. Sargent ◽  
Alexander Shik

ABSTRACTA low level of electron injection is one of the major obstacles to achieving high-efficiency organic light-emitting diodes. With the goal of improving injection characteristics, we fabricated and investigated herein multi-layer contacts which included a tunnel-transparent dielectric layer of nanometer thickness. Polymer layers were prepared by the spin-coating method and dielectric and metallic contact layers grown by vacuum deposition. The voltage drop at this layer shifts the metal Fermi level relative to the polymer molecular orbitals responsible for the carrier transport, increasing the injection efficiency. The introduction of a suitably chosen dielectric layer results in an increase in the injection efficiency by up to a factor of several tens.Further sophistication of the injecting contacts consists in creating and additional intermediate thin metallic layer playing the role of the third, base electrode, similar to hot-electron transistors with metallic base. Additional bias applied to the base electrode permits variable injection efficiency and quantum yield over a wide range.


2002 ◽  
Vol 25 (3) ◽  
pp. 233-237
Author(s):  
K. F. Yarn

First observation of switching behavior is reported in GaAs metal-insulator-p-n+structure, where the thin insulator is grown at low temperature by a liquid phase chemical-enhanced oxide (LPECO) with a thickness of 100 Å. A significant S-shaped negative differential resistance (NDR) is shown to occur that originates from the regenerative feedback in a tunnel metal/insulator/semiconductor (MIS) interface andp-n+junction. The influence of epitaxial doping concentration on the switching and holding voltages is investigated. The switching voltages are found to be decreased when increasing the epitaxial doping concentration, while the holding voltages are almost kept constant. A high turn-off/turn-on resistance ratio up to105has been obtained.


Author(s):  
Xiaokang Li ◽  
Wenxing Liu ◽  
Kai Chen ◽  
Ruixia Wu ◽  
Guo-Jun Liu ◽  
...  

Abstract In this work, we have experimentally demonstrated the efficacy of micro-cavity effect in realizing high-performance top-emitting organic light-emitting diodes (TEOLEDs). By optimizing the thickness of top Yb/Ag electrode and cavity length, highly efficient green TEOLED with external quantum efficiency as high as 38% was achieved. A strong dependence of electroluminescent (EL) performances and spectrum on cavity length was observed, and there was also a significant angle dependence of EL spectrum. Ultimately, ultra-high current efficiency up to 161.17 cd/A (3.2 V) was obtained by the device with emission peak at 552 nm, which is 35 nm longer than the intrinsic emission peak (517 nm) of utilized green emitter. Interestingly, this device displayed narrow emission with full-width at half-maximum (FWHM) of less than 20 nm, which was obtained by increasing the Ag layer thickness.


Author(s):  
Wen-Shan Lin ◽  
Yue Kuo

Abstract Solid-state incandescent light emitting devices made from MOS capacitors with the WOx embedded Zr-doped HfOx gate dielectric were characterized for electrical and optical characteristics. Devices made from capacitors containing Zr-doped HfOx and WOx, gate dielectrics were also fabricated for comparison. The device with the WOx embedded gate dielectric layer had electrical and light emitting characteristics between that with WOx gate dielectric layer and that with the Zr-doped HfOx but no WOx embedded gate dielectric layer. The difference can be explained by the nano-resistor formation process and the content of the high emissivity W in the nano-resistor. The device made from the WOx embedded Zr-doped HfOx gate dielectric MOS capacitor is applicable to areas where uniform emission of warm white light is required.


2014 ◽  
Vol 1056 ◽  
pp. 42-46 ◽  
Author(s):  
Kai Wu ◽  
Wei Xia Gu ◽  
Chen Wu ◽  
Jin Lou Ma ◽  
Xi Ying Ma

We designed MoS2/SiO2one-dimensional (1D) photonic crystal using the concept of photonic crystal and investigated the light transfer properties by means of transfer-matrix method. We found that the transfer properties of photonic crystal can be modified by the period of photonic crystal, the thickness of dielectric layer, and the number of the defect layers. The number of photonic band gaps (PBGs) reduces with the decrease of the thickness of dielectric layer, and the position of PBGs in the spectra rapidly moves to short wavelength direction. For defect photonic crystal, the width of the PBGs obviously become larger, and the transmittance spectra oscillate more intensely, similar to the characteristics of Bragg gratings. These properties will give good instructor for the preparation of 1D MoS2quantum well light emitting devices and solar cells.


2006 ◽  
Vol 88 (12) ◽  
pp. 123506 ◽  
Author(s):  
Ricky J. Tseng ◽  
Jianyong Ouyang ◽  
Chih-Wei Chu ◽  
Jinsong Huang ◽  
Yang Yang

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