scholarly journals Nanoparticle-induced negative differential resistance and memory effect in polymer bistable light-emitting device

2006 ◽  
Vol 88 (12) ◽  
pp. 123506 ◽  
Author(s):  
Ricky J. Tseng ◽  
Jianyong Ouyang ◽  
Chih-Wei Chu ◽  
Jinsong Huang ◽  
Yang Yang
Keyword(s):  
Memory Effect ◽  
Negative Differential Resistance ◽  
Differential Resistance ◽  
Light Emitting

Negative Differential Resistance Behavior and Memory Effect in Laterally Bridged ZnO Nanorods Grown by Hydrothermal Method

2014 ◽  
Vol 6 (8) ◽  
pp. 5432-5438 ◽  
Author(s):  
Ming-Yueh Chuang ◽  
Ying-Chih Chen ◽  
Yan-Kuin Su ◽  
Chih-Hung Hsiao ◽  
Chien-Sheng Huang ◽  
...  
Keyword(s):  
Hydrothermal Method ◽  
Memory Effect ◽  
Negative Differential Resistance ◽  
Zno Nanorods ◽  
Differential Resistance

Experimental Studies and Physical Model of Efficient, Tunable Injection Using Tunnel-Transparent Dielectric Contacts on Polymer Light-Emitting Devices

2002 ◽  
Vol 734 ◽  
Author(s):  
Ludmila Bakueva ◽  
Sergei Musikhin ◽  
Edward H. Sargent ◽  
Alexander Shik
Keyword(s):  
Dielectric Layer ◽  
Negative Differential Resistance ◽  
Voltage Drop ◽  
Strong Dependence ◽  
Experimental Studies ◽  
Differential Resistance ◽  
Hot Electron ◽  
Injection Efficiency ◽  
Light Emitting ◽  
Light Emitting Devices

ABSTRACTMost conducting polymers used for light-emitting devices have a small electron affinity, creating a high barrier for electron injection resulting in low injection efficiency. To improve injection characteristics, we fabricated and investigated multi-layer contacts with a tunneltransparent dielectric layer of nanometer thickness. Polymer layers were prepared by spin coating, and dielectric and metallic contact layers subsequently grown by vacuum deposition. Samples with such multi-layer cathodes demonstrated a current-voltage characteristic with negative differential resistance. At larger applied voltage, electroluminescence was observed with an efficiency larger than for a simple cathode of the same metal. We have developed a model to describe double injection through multi-layer contacts which explains these salient observed features. The increase in injection efficiency is caused by the voltage drop at the dielectric layer, shifting the metal Fermi level relative to the polymer molecular orbitals responsible for carrier transport. The negative differential resistance is explained by the strong dependence of dielectric tunnel transparency on voltage, a dependence which is qualitatively different for electrons and holes. Further flexibility in the functional characteristics of the injecting contacts is achieved through the use of an additional thin metallic layer playing the role of a base electrode, similar to hot-electron transistors with metallic base.

Negative differential resistance and hysteresis in graphene-based organic light-emitting devices

2018 ◽  
Vol 6 (8) ◽  
pp. 1926-1932 ◽  
Author(s):  
Qin Zhang ◽  
Shufen Chen ◽  
Shuai Zhang ◽  
Wenjuan Shang ◽  
Lihui Liu ◽  
...  
Keyword(s):  
Negative Differential Resistance ◽  
Differential Resistance ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Organic Light ◽  
Current Annealing ◽  
Organic Light Emitting Devices ◽  
Annealing Method

Current annealing method was used to eliminate the negative differential resistance and hysteresis in graphene OLEDs.

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