Removal of TaN/Ta Barrier with Variable Selectivity to Copper and TEOS

2002 ◽  
Vol 732 ◽  
Author(s):  
Jinru Bian ◽  
John Quanci ◽  
Matthew VanHanehem
Keyword(s):  
High Selectivity ◽  
Copper Removal ◽  
Removal Rates ◽  
High Metal ◽  
Barrier Removal ◽  
Low K ◽  
Static Etching

AbstractHighly selective 2nd step copper slurries developed by Rodel have efficient barrier (TaN) polishing rates at extremely low down force (1000 Å/min at one psi, and 2000 Å/min at 3 psi). Removal rates of dielectrics (TEOS or low k CDO) can be independently adjusted from zero to nearly any designed value and copper removal rates can be independently controlled from 20 to 500 Å /min, while maintaining the high barrier removal rates. In addition, zero loss of low-k dielectric capping layers has been demonstrated, and zero loss of high metal density (90%) domain of pattern wafers with 30 seconds overpolishing has been demonstrated. Experiments also show that the high selectivity is a true CMP effect and not due to static etching.

Modified Abrasives based on fumed SiO2 and Al2O3 for the Cu CMP Process

2004 ◽  
Vol 816 ◽  
Author(s):  
D. Zeidler ◽  
J.W. Bartha ◽  
W.L ortz ◽  
R. Brandes
Keyword(s):  
Surface Quality ◽  
High Selectivity ◽  
Removal Rate ◽  
New Method ◽  
Copper Removal ◽  
Complexing Agent ◽  
Abrasive Particles ◽  
Cu Cmp ◽  
Low Rate ◽  
Fumed Sio2

AbstractNew abrasive particles based on SiO2 and Al2O3 were produced with different coating and doping. Seven specifically designed particles were dispersed to prepare slurries for Cu CMP. Glycin was used as complexing agent and hydrogenperoxid as oxidizer. The experimentally obtained removal rate, selectivity, surface quality and planarisation ability, demonstrate a significant impact of the different abrasives tested. SiO2 particles covered with Al2O3 increased the removal rate for Cu. In comparison to this behavior, a low rate for TaN proved a high selectivity copper removal required by the Cu CMP process. A new method for the planarisation length monitoring (step polish response) shows also significant differences in planarisation length (PL) by the polish of copper with slurries composed of these new particles.

Investigation of the influence of different copper slurry systems on post CMP topography performance

2004 ◽  
Vol 816 ◽  
Author(s):  
Goetz Springer ◽  
Peter Thieme ◽  
Pierre Klose
Keyword(s):  
Research And Development ◽  
Dielectric Materials ◽  
Development Effort ◽  
Process Performance ◽  
Systematic Procedure ◽  
Advantages And Disadvantages ◽  
Integration Schemes ◽  
High Metal ◽  
Copper Cmp ◽  
Low K

AbstractSince the early days of copper CMP much research and development effort was put into formulation of new copper and barrier CMP slurries. Two major motivations for this effort are the improvement of process performance for currently used integration schemes and the preparation for new integration schemes using low-k and ultra low-k dielectric materials. In this paper a systematic procedure for topography investigation after copper and barrier CMP is presented. The procedure is applied to four different copper slurries in order to compare after copper and after barrier CMP topography performance. As a result of the post copper CMP topography investigations, a discussion of advantages and disadvantages of non-selective and selective barrier polish processes will be presented. To complete the discussion of potential topography correction during barrier CMP, an investigation of an observed pronounced dielectric erosion close to large metal features or within high metal density arrays with medium or high selective barrier CMP processes will be presented.

scholarly journals REDUCTION OF SOME HEAVY ELEMENTS FROM POLLUTED WATER USING THE BIOLOGICAL ADSORPTION TECHNQUE BY DRY ALGAE

2019 ◽  
Vol 50 (4) ◽  
Author(s):  
Al-Qaisi & et al.
Keyword(s):  
Heavy Element ◽  
Treatment Time ◽  
Dry Weight ◽  
Heavy Elements ◽  
Copper Removal ◽  
Polluted Water ◽  
Removal Rates ◽  
Alkyl Amine ◽  
Copper Chromium

The biological adsorption technique was used with the powder of (Chara virgata, Cladophora  fuebllornei) algae with a dry weight of 0.5 g to treat water contaminated with heavy elements of lead, cadmium, copper, chromium and iron at the two following different locations in Baghdad: Al- Waziriyah Batteries factory, and Tanning & Leather Factory. The experiments were performed at a pH 6 and at a speed of 100 rpm in an electric vibrator. The chara virgata showed high removal ratios 100% of lead, cadmium, and iron respectively in the first half hour of the experiment, while the chromium and copper removal rates ranged from 74.6-100%, 73.2-100% with 0.5-3 hour treatment time respectively. The results of Cladophora fuebllornii were different for the chromium element with removal rates ranging from 77.7-100% and with a treatment time of 0.5-2 hours respectively .Copper removal rates ranged between 83.6-100% and 0.5-1.5 hours. Lead, cadmium, and iron also had 100% removal rates, respectively within the first half hour of the experiment. The analysis of the infrared device (FTIR) for the sample of the two-algae used in the experiments proved the presence of the active groups in the cellular walls of each alga, namely carboxyl, hydroxyl, alkyl, amine, and amide groups, which are responsible for bonding heavy element that present in the polluted water.

Copper CMP Formulation for 65 nm Device Planarization

2004 ◽  
Vol 816 ◽  
Author(s):  
Gregory T. Stauf ◽  
Karl Boggs ◽  
Peter Wrschka ◽  
Craig Ragaglia ◽  
Michael Darsillo ◽  
...  
Keyword(s):  
Cross Section ◽  
High Selectivity ◽  
Superior Performance ◽  
Shear Forces ◽  
Process Robustness ◽  
Integration Schemes ◽  
Wire Cross Section ◽  
Surface Modified ◽  
Low K ◽  
Electrical Data

AbstractTo achieve 65 nm technology node requirements, CMP processes must provide improved control of selectivity, topography, wire cross section, and process robustness. Slurries and processes must also be compatible with fragile low k materials by providing low erosion and shear forces. We present data on a unique step 1 bulk Cu removal slurry with high selectivity, removal rates over 8000 Å/min, and extremely low liner removal/erosion in high (90%) density structures. This is achieved through a combination of surface modified abrasives and alternative inhibitors which provide superior performance and reduced electrochemical activity compared to benzotriazole, a commonly used inhibitor. The step 1 slurry was used with a step 2 liner removal slurry that can be chemically tuned to adjust relative selectivities of Cu:Ta:oxide from the nominal ratio of 1:0.9:1.6, allowing its use with a variety of integration schemes. Results of CMP planarization experiments on 200 mm blanket and patterned single damascene test wafers are described, including electrical data which demonstrates low overpolish sensitivity.

Performance Comparisons of Abrasive Containing and Abrasive Free Slurries for Copper Low-k CMP

2002 ◽  
Vol 732 ◽  
Author(s):  
John Nguyen ◽  
Gerald Martin ◽  
Ron Carpio ◽  
Malcolm Grief ◽  
Somit Joshi
Keyword(s):  
Removal Rate ◽  
Low Cost ◽  
Copper Removal ◽  
Process Window ◽  
Low Friction ◽  
Cost Of Ownership ◽  
Percent Solid ◽  
Copper Cmp ◽  
Robust Process ◽  
Low K

AbstractThe commercially available abrasive containing slurries for copper CMP have shown some advantages in high removal rates, low friction at low down force, and minimal to no copper residues, regardless of the polisher architecture, either rotary, orbital, or linear polishing. However, the abrasive containing slurries have some disadvantages such as high dishing and erosion with more micro-scratches due to the presence of abrasives. In contrast, the abrasive free polishing slurry has lower removal rate, and seems to be sensitive to polishing architecture, but it has good planarization, low topography, less micro-scratches, and most importantly is insensitive to over-polish.At this stage, the best results for copper CMP are being achieved by the use of the multi-step and multi-slurry process in which copper is polished first, and barrier layers are polished with a different set of consumables. The intent of this paper is to focus on the first step, the copper removal step, and to compare different approaches for this first step; namely, the use of slurries containing abrasives with slurries that are free of abrasives on the orbital polisher. The combined process with low percent solid and small-sized abrasives for the bulk copper removal step and abrasive free polishing (AFP) slurry for the residual copper removal step on an orbital polisher has produced a very robust process window with excellent results including low topography, low erosion, insensitivity to over-polish and low cost of ownership.

Comparison of Glycine and Citric Acid as Complexing Agents in Copper Chemical-Mechanical Polishing Slurries

2003 ◽  
Vol 767 ◽  
Author(s):  
Venkata Gorantla ◽  
S.V. Babu
Keyword(s):  
Citric Acid ◽  
Low Ph ◽  
Copper Removal ◽  
Complexing Agents ◽  
Alkaline Ph ◽  
Removal Rates ◽  
Copper Dissolution ◽  
Ph Values ◽  
Alkaline Conditions

AbstractTwo complexing agents, glycine and citric acid, in hydrogen peroxide based slurries for planarizing copper have been compared. Copper dissolution and polish rates and in situ electrochemical experimental results at various slurry pH values and hydroxyl radical concentrations at pH=8.4 are presented. It was observed that the pH of the slurry has a strong influence on copper dissolution and polish rates. While high copper removal rates were observed with citric acid-peroxide solutions at low pH values, glycineperoxide system yielded high Cu removal rates at alkaline pH values. Copper dissolution rates in both the systems at pH 4 and 8 were consistent with the electrochemical measurements. The concentration of hydroxyl radicals generated in citric acid-peroxide system was less than that of those generated in glycine peroxide system at pH=8.4 indicating low copper removal rates at alkaline conditions in the former system.

Improved Cleaning Process for Etch Residue Removal in an Advanced Copper/Low-k Device without the Use of DMAC (Dimethylacetamide)

2012 ◽  
Vol 187 ◽  
pp. 245-248
Author(s):  
Chung Kyung Jung ◽  
Sung Wook Joo ◽  
Sang Wook Ryu ◽  
S. Naghshineeh ◽  
Yang Lee ◽  
...  
Keyword(s):  
High Selectivity ◽  
Dry Etching ◽  
New Materials ◽  
Process Step ◽  
Residue Removal ◽  
The Past ◽  
Microelectronic Fabrication ◽  
Etching Mask ◽  
Low K ◽  
Etch Residue

Plasma dry etching processes are commonly used to fabricate sidewalls of trenches and vias for copper / low-k dual damascene devices. Typically, some polymers remain in the trench and at the via top and sidewall. Other particulate etch residues are may remained in the bottom and on the sidewalls of vias. Generally, the particulate consists of mixtures of copper oxide with polymers. The polymers on the sidewalls and the particulate residues at the bottom of vias must be removed prior to the next process step. Small amounts of polymer are intentionally left on the sidewalls of trenches and vias during the etching in order to achieve a vertical profile and to protect the low-k materials under the etching mask. Until now, the industry has relied mainly on organic solvent containing mixtures to clean etch / ash residues from such devices. The effectiveness of available residue removers varies with the specific process and also depends on which new integration materials are used. New materials typically include Cu, TaN, low-k dielectrics and others [1-. Solvent content is thought to aid the removal of polymer residues and particulates produced during plasma dry etching processes. Therefore, in the past we have used a residue remover which contains DMAC (dimethylacetamide). But the use of DMAC is banned in microelectronic fabrication facilities in Europe because of its toxicity. Thus we wanted to find and evaluate a DMAC-free residue remover for removing polymer residues while maintaining high selectivity to the copper and ILD films.

Electron Probe Analysis of Vertebrate Smooth Muscle: Distribution of Ca and Ci

1976 ◽  
Vol 34 ◽  
pp. 334-335 ◽  
Author(s):  
Avril V. Somlyo ◽  
H. Shuman ◽  
A.P. Somlyo
Keyword(s):  
Smooth Muscle ◽  
Electron Probe ◽  
Preliminary Report ◽  
Cell Damage ◽  
Electron Probe Analysis ◽  
Perinuclear Space ◽  
Probe Analysis ◽  
High K ◽  
Low K ◽  
Initial Results

This is a preliminary report of electron probe analysis of rabbit portal-anterior mesenteric vein (PAMV) smooth muscle cryosectioned without fixation or cryoprotection. The instrumentation and method of electron probe quantitation used (1) and our initial results with cardiac (2) and skeletal (3) muscle have been presented elsewhere.In preparations depolarized with high K (K2SO4) solution, significant calcium peaks were detected over the sarcoplasmic reticulum (Fig 1 and 2) and the continuous perinuclear space. In some of the fibers there were also significant (up to 200 mM/kg dry wt) calcium peaks over the mitochondria. However, in smooth muscle that was not depolarized, high mitochondrial Ca was found in fibers that also contained elevated Na and low K (Fig 3). Therefore, the possibility that these Ca-loaded mitochondria are indicative of cell damage remains to be ruled out.

Selective oxidation of aniline into azoxybenzene catalyzed by Nb-peroxo@iron oxides at room temperature

2020 ◽  
Vol 44 (21) ◽  
pp. 8710-8717
Author(s):  
André L. D. Lima ◽  
Humberto V. Fajardo ◽  
André E. Nogueira ◽  
Márcio C. Pereira ◽  
Luiz C. A. Oliveira ◽  
...  
Keyword(s):  
Iron Oxides ◽  
Selective Oxidation ◽  
Room Temperature ◽  
High Selectivity

Nb-peroxo@iron oxides show high selectivity and activity in aniline conversion to azoxybenzene.

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