Low‐temperature ion beam mixing of Al‐Sb

1981 ◽  
Vol 38 (4) ◽  
pp. 237-240 ◽  
Author(s):  
J. Delafond ◽  
S. T. Picraux ◽  
J. A. Knapp
Keyword(s):  
Low Temperature ◽  
Ion Beam ◽  
Ion Beam Mixing

Low-Temperature Formation of β-Type Silicon Carbide by Ion-Beam Mixing

1985 ◽  
Vol 24 (Part 1, No. 12) ◽  
pp. 1712-1715 ◽  
Author(s):  
Tadamasa Kimura ◽  
Yuki Tatebe ◽  
Akira Kawamura ◽  
Shigemi Yugo ◽  
Yoshio Adachi
Keyword(s):  
Silicon Carbide ◽  
Low Temperature ◽  
Ion Beam ◽  
Ion Beam Mixing ◽  
Type Silicon

Effect of ion beam mixing/implantation at low temperature on superconductivity in palladium-hydrogen and palladium-copper-hydrogen systems

1987 ◽  
Vol 4 (6) ◽  
pp. 241-244 ◽  
Author(s):  
Li Hongcheng ◽  
Dong Ziwen ◽  
Yang Feng ◽  
Wang Ruilan ◽  
Liu Jiarui ◽  
...  
Keyword(s):  
Low Temperature ◽  
Ion Beam ◽  
Ion Beam Mixing ◽  
Hydrogen Systems

Amorphization of metallic systems induced by low-temperature ion-beam mixing

1994 ◽  
Vol 50 (5) ◽  
pp. 2815-2826 ◽  
Author(s):  
J. Jagielski ◽  
L. Thomé ◽  
T. Benkoulal
Keyword(s):  
Low Temperature ◽  
Ion Beam ◽  
Ion Beam Mixing ◽  
Metallic Systems

scholarly journals Low‐temperature ion beam mixing of Pt and Si markers in Ge

1985 ◽  
Vol 46 (2) ◽  
pp. 154-156 ◽  
Author(s):  
Sung‐Joon Kim ◽  
M‐A. Nicolet ◽  
R. S. Averback ◽  
P. Baldo
Keyword(s):  
Low Temperature ◽  
Ion Beam ◽  
Ion Beam Mixing

TiSi2 Phase Transformation by Amorphization Techniques

1996 ◽  
Vol 441 ◽  
Author(s):  
Tord Karlin ◽  
Martin Samuelsson ◽  
Stefan Nygren ◽  
Mikael östling
Keyword(s):  
Phase Transformation ◽  
High Temperature ◽  
Low Temperature ◽  
Ion Beam ◽  
High Energy ◽  
Titanium Silicide ◽  
Silicide Phase ◽  
Rapid Thermal Anneal ◽  
Ion Beam Mixing ◽  
Line Widths

AbstractULSI packing density calls for sub-micron line widths, but on n-type polysilicon this can lead to incomplete titanium silicide C49 to C54 phase transformation after a conventional two step rapid thermal anneal (RTA). This study compares three different ion beam amorphization techniques: preamorphization, ion beam mixing and silicide amorphization, aiming at a complete phase transformation for submicron silicide lines. For preamorphization, an arsenic implantation at moderate energies (35–75 keV) was used to amorphize the top layer of the polysilicon prior to the titanium deposition. Ion beam mixing used a high-energy (200 keV) arsenic implantation after the titanium deposition to create an amorphous mix of silicon and titanium. These two methods did, each by themselves, lead to an increased fraction of C54 silicide grains already during the low temperature RTA, and a complete phase transformation during the subsequent high temperature RTA. Both methods lowered the thickness difference between titanium silicide on p- and n-type silicon. Silicide amorphization with 75 keV arsenic or 100 keV antimony, applied before the second RTA, did not significantly improve the silicide phase transformation.

Low temperature ion beam mixing of Co/Si systems

1992 ◽  
Vol 70 (1-4) ◽  
pp. 913-916 ◽  
Author(s):  
A. Vantomme ◽  
G. Langouche
Keyword(s):  
Low Temperature ◽  
Ion Beam ◽  
Ion Beam Mixing

scholarly journals Low-temperature ion-beam mixing in metals

1988 ◽  
Vol 37 (1) ◽  
pp. 38-49 ◽  
Author(s):  
S.-J. Kim ◽  
M-A. Nicolet ◽  
R. S. Averback ◽  
D. Peak
Keyword(s):  
Low Temperature ◽  
Ion Beam ◽  
Ion Beam Mixing
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