Growth of GeSi/Si Strained-layer Superlattices Using Limited Reaction Processing

1986 ◽  
Vol 71 ◽  
Author(s):  
C. M. Gronet ◽  
C. A. King ◽  
J. F. Gibbons
Keyword(s):  
Electron Spectroscopy ◽  
Multilayer Structure ◽  
Auger Electron ◽  
Film Deposition ◽  
Gas Composition ◽  
Transmission Electron ◽  
Strained Layer Superlattices ◽  
Uv Ozone ◽  
Reaction Processing

AbstractSiGe/Si superlattices were grown using limited reaction processing in a chamber which allows both W-halogen and Hg arc wafer illumination. Each multilayer structure was fabricated in-situ by changing the gas composition between high temperature cycles. Commensurate SiGe alloy layers as thin as 15 nm were reproducibly deposited and were examined using transmission electron microscopy, sputtering Auger electron spectroscopy,and Rutherford backscattering. Preliminary results are presented on UV/ozone cleaning of LRP substrates to remove residual carbon contamination in-situ prior to film deposition.

Substrate Interactions in the Formation of Amorphous Silicon/Dielectric Interfaces

1989 ◽  
Vol 149 ◽  
Author(s):  
G. N. Parsons ◽  
S. S. Kim ◽  
G. Lucovsky
Keyword(s):  
Amorphous Silicon ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Film Deposition ◽  
Substrate Interactions ◽  
Dielectric Interface ◽  
Process Gas ◽  
Layer Deposition ◽  
Dielectric Interfaces

ABSTRACTUsing Remote PECVD we have deposited layers of “device quality” a-Si:H and Si-based dielectrics. We find that the formation of depletion or accumulation layers at a-Si:H/dielectric interface depends on the specific dielectric (SiO2 or Si3N4) and on the film deposition sequence. In addition, we have studied process-gas/substrate interactions by in-situ Auger Electron Spectroscopy (AES) and determined that Si-O or Si-N bonds are produced at a-Si and c-Si surfaces exposed to plasma excited He/O2, or NH3 mixtures, respectively. These process-gas/substrate interactions occur in parallel with film deposition and are correlated with the electronic properties of the interfaces, and the layer deposition sequence.

Auger Electron Spectroscopy and Its Application to Nanotechnology

2011 ◽  
Vol 19 (2) ◽  
pp. 12-15 ◽  
Author(s):  
S. N. Raman ◽  
D. F. Paul ◽  
J. S. Hammond ◽  
K. D. Bomben
Keyword(s):  
Electron Microscopy ◽  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Imaging Techniques ◽  
Chemical Characterization ◽  
Depth Resolution ◽  
Surface Modifications ◽  
Transmission Electron ◽  
Nanoscale Characterization

Over the past decade, the field of nanotechnology has expanded, and the most heavily used nanoscale characterization/imaging techniques have been scanning probe microscopy (SPM), scanning electron microscopy (SEM), and transmission electron microscopy (TEM). Although these high-resolution imaging techniques help visualize nanostructures, it is essential to understand the chemical nature of these materials and their growth mechanisms. Surface modifications in the first few nanometers can alter the bulk properties of these nanostructures, and conventional characterization techniques, including energy dispersive spectroscopy (EDS) and electron energy loss spectroscopy (EELS) associated with SEM and TEM are not suited to detecting these surface modifications except in special, favorable specimens. A modern state-of-the-art scanning Auger electron spectroscopy (AES) instrument provides valuable elemental and chemical characterization of nanostructures with a lateral spatial resolution better than 10 nm and a depth resolution of a few nm. In this article we review the technique of scanning AES and highlight its unique analytical capabilities in the areas of nanotechnology, metallurgy, and semiconductors.

The Distribution of Phosphorus in Romano-British Ironwork

1990 ◽  
Vol 185 ◽  
Author(s):  
Alain E. Kaloyeros ◽  
Robert M. Ehrenreich
Keyword(s):  
Electron Microscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Materials Analysis ◽  
X Ray ◽  
Transmission Electron ◽  
Depth Study ◽  
Iron Artifacts ◽  
And Performance ◽  
Secondary Ion

AbstractPhosphorus is found to be a common impurity in many of the iron tools and weapons produced during the pre-Roman and Roman Iron Ages of Britain (600 BC - 300 AD). The effects of this impurity on the properties and performance of antiquarian materials is not well understood, however. This paper presents the initial findings of an in-depth study of the distribution, chemistry, and effects of phosphorus in Romano-British ironwork. For this purpose, two Romano-British iron artifacts from the site of Ircheoter, Northamptonshire, were examined using powerful techniques for archeological materials analysis that include electron microprobe, secondary ion mass spectroscopy (SIMS), transmission electron microscopy (TEM) with energydispersive x-ray spectroscopy capabilities (EDXS), and Auger electron spectroscopy (AES). It was found that phosphorous was indeed present in the artifacts. The phosphorus atoms were predominantly segregated at grain boundaries and thus should have led to a lowering of grain boundary cohesion and a degradation in the performance of the tools.

Self-Lubricating, TiN-MoS2 Composite Coatings Produced by Simultaneous Deposition from Ti((CH3) 2N)4/NH3/MoF6/H2S GAS Mixtures

1994 ◽  
Vol 363 ◽  
Author(s):  
Y. W. Bae ◽  
W. Y. Lee ◽  
T. M. Besmann ◽  
P. J. Blau ◽  
K. L. More ◽  
...  
Keyword(s):  
Electron Spectroscopy ◽  
Auger Electron ◽  
Composite Coatings ◽  
Gas Mixtures ◽  
Ambient Condition ◽  
Kinetic Friction ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Computer Controlled

AbstractComposite coatings consisting of discrete phases of TiN and MoS2 were codeposited on graphite substrates from Ti((CH3)2N)4/NH3/MoF6/H2S gas mixtures in a cold-wall reactor at 1073 K and 1.3 kPa. Chemical composition and microstructure of the coatings were characterized by Auger electron spectroscopy, X-ray diffraction, and transmission electron microscopy. Kinetic friction coefficients of the coatings were determined by a computer-controlled friction microprobe and values less than 0.2 were obtained with a type-440C stainless-steel counterface under ambient condition.

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