Hydrogenated Amorphous Silicon Thin-Film Deposition by Direct Photo-Enhanced Decomposition of Silane Using an Internal Hydrogen Discharge Lamp.

1986 ◽  
Vol 70 ◽  
Author(s):  
P. A. Robertson ◽  
W. I. Milne
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Film Growth ◽  
Hydrogenated Amorphous Silicon ◽  
Thin Film Deposition ◽  
High Energy ◽  
Film Deposition ◽  
Discharge Lamp ◽  
Hydrogen Discharge ◽  
Hydrogenated Amorphous

ABSTRACTHydrogenated amorphous silicon (a-Si:H) thin films have been deposited from silane using a novel photo-enhanced decomposition technique. The system comprises a hydrogen discharge lamp contained within the reaction vessel; this unified approach allows high energy photon excitation of the silane molecules without absorption by window materials or the need for mercury sensitisation. The film growth rates (exceeding 4 Å/s) and material properties obtained are comparable to those of films produced by plasma-enhanced CVD techniques. The reduction of energetic charged particles in the film growth region should enable the fabrication of cleaner semiconductor/insulator interfaces in thin-film transistors.

Molecular-Dynamics Simulations of Hydrogenated Amorphous Silicon Thin-Film Growth

1995 ◽  
Vol 408 ◽  
Author(s):  
T. Ohira ◽  
O. Ukai ◽  
M. Noda ◽  
Y. Takeuchi ◽  
M. Murata ◽  
...  
Keyword(s):  
Thin Film ◽  
Molecular Dynamics ◽  
Amorphous Silicon ◽  
Film Growth ◽  
Hydrogenated Amorphous Silicon ◽  
Md Simulations ◽  
Thin Film Growth ◽  
Silicon Thin Film ◽  
Radical Migration ◽  
Hydrogenated Amorphous

AbstractWe have performed molecular-dynamics (MD) simulations of hydrogenated amorphous silicon (a-Si:H) thin-film growth using realistic many-body semiclassical potentials developed to describe Si-H interactions. In our MD model, it was assumed that SiH3, SiH2 and the H radicals are main precursors for the thin-film growth. In MD simulations of a-Si:H thin-film growth by many significant precursor SiH3 radicals, we have evaluated average radical migration distances, defect ratios, hydrogen contents, and film growth rates as a function of different incident radical energies to know the effect of the radical energization on the properties. As a result of the comparison between the numerical and experimental results, it was observed that the agreement is fairly good, and that an increase of radical migration distance due to the radical energization is effective on a- Si:H thin-film growth with a low defect.

Effects of Ultraviolet Radiation on the Characteristics of Hydrogenated Amorphous Silicon Thin Film Transistors

1992 ◽  
Vol 258 ◽  
Author(s):  
Seong K. Lee ◽  
Jin S. Park ◽  
Yong S. Kim ◽  
Jung R. Hwang ◽  
Chang H. Oh ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Uv Radiation ◽  
Thin Film Transistors ◽  
Uv Light ◽  
Hydrogenated Amorphous Silicon ◽  
High Energy ◽  
Experimental Results ◽  
Light Illumination ◽  
Hydrogenated Amorphous

ABSTRACTThe experimental results regarding to the effects of ultraviolet (UV) light illumination on the characteristics of hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFT's) have been presented. The device parameters of a-Si:H TFT, such as threshold voltage, field-effect mobility, and subthreshold slope, have been degraded by electrical stress and visible light illumination, but substantially improved by UV radiation. This may be attributed to an annealing effect on the dangling-bond defects, involving a number of phonons generated by absorption of high energy UV photons in the a-Si:H TFT channel. It has been also observed that the off-current of a-Si:H TFT decreases remarkably while the on-current changes very little. From the experimental results, we report that the improved on/off current ratio of a-Si:H TFT may be achieved by UV radiation.

Molecular Dynamics Simulation of Hydrogenated Amorphous Silicon with Tersoff Potential

1994 ◽  
Vol 336 ◽  
Author(s):  
Tatsuya Ohira ◽  
Takaji Inamuro ◽  
Takeshi Adachi
Keyword(s):  
Thin Film ◽  
Molecular Dynamics ◽  
Amorphous Silicon ◽  
Film Growth ◽  
Interatomic Potential ◽  
Hydrogenated Amorphous Silicon ◽  
Thin Film Growth ◽  
Dynamics Simulation ◽  
Growth Processes ◽  
Hydrogenated Amorphous

ABSTRACTA Molecular dynamics method with a Many-body Tersoff-type interatomic potential has been being applied to analyses of hydrogenated Amorphous silicon (a-Si:H) thin-film growth processes. As a first step toward film growth simulations, Molecular dynamics simulations of SiH3 radical, which would be a significant precursor for the a-Si:H thin-film growth processes, and a-Si:H formation with a rapid quenching method have been performed by developing new Tersoff-type interatomic potential between Si and H in this study. Visualization of SiH3 radical dynamics by computer graphics has made it possible to observe the inversion and rotation of SiH3 radical, which had been predicted by infrared diode-laser spectroscopie measurement in other group. In addition, visualization of the a-Si:H sample has helped us to find that there are some microcavities in the sample and that there are two kinds of hydrogen in the sample, gathering closely together while lying scattered, which had been predicted in IR absorption experimental results.

Photoenhanced CVD of hydrogenated amorphous silicon using an internal hydrogen discharge lamp

1989 ◽  
Vol 43 (1-4) ◽  
pp. 277-284 ◽  
Author(s):  
W.I. Milne ◽  
F.J. Clough ◽  
S.C. Deane ◽  
S.D. Baker ◽  
P.A. Robertson
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Discharge Lamp ◽  
Internal Hydrogen ◽  
Hydrogen Discharge ◽  
Hydrogenated Amorphous

Hydrogenated Nanocrystalline Silicon Thin Film Transistor Array for X-ray Detector Application

2008 ◽  
Vol 1066 ◽  
Author(s):  
Kyung-Wook Shin ◽  
Mohammad R. Esmaeili-Rad ◽  
Andrei Sazonov ◽  
Arokia Nathan
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Threshold Voltage ◽  
Hydrogenated Amorphous Silicon ◽  
Nanocrystalline Silicon ◽  
Amorphous Selenium ◽  
Breakdown Field ◽  
Storage Capacitor ◽  
X Ray ◽  
Hydrogenated Amorphous

ABSTRACTHydrogenated nanocrystalline silicon (nc-Si:H) has strong potential to replace the hydrogenated amorphous silicon (a-Si:H) in thin film transistors (TFTs) due to its compatibility with the current industrial a-Si:H processes, and its better threshold voltage stability [1]. In this paper, we present an experimental TFT array backplane for direct conversion X-ray detector, using inverted staggered bottom gate nc-Si:H TFT as switching element. The TFTs employed a nc-Si:H/a-Si:H bilayer as the channel layer and hydrogenated amorphous silicon nitride (a-SiNx) as the gate dielectric; both layers deposited by plasma enhanced chemical vapor deposition (PECVD) at 280°C. Each pixel consists of a switching TFT, a charge storage capacitor (Cpx), and a mushroom electrode which serves as the bottom contact for X-ray detector such as amorphous selenium photoconductor. The chemical composition of the a-SiNx was studied by Fourier transform infrared spectroscopy. Current-voltage measurements of the a-SiNx film demonstrate that a breakdown field of 4.3 MV/cm.. TFTs in the array exhibits a field effect mobility (μEF) of 0.15 cm2/V·s, a threshold voltage (VTh) of 5.71 V, and a subthreshold leakage current (Isub) of 10−10 A. The fabrication sequence and TFT characteristics will be discussed in details.

scholarly journals A FRACTAL MODEL FOR THE FIRST STAGES OF THIN FILM GROWTH

Fractals ◽  
1996 ◽  
Vol 04 (03) ◽  
pp. 321-329 ◽  
Author(s):  
PABLO JENSEN ◽  
ALBERT-LÁSZLÓ BARABÁSI ◽  
HERNÁN LARRALDE ◽  
SHLOMO HAVLIN ◽  
H. EUGENE STANLEY
Keyword(s):  
Thin Film ◽  
Film Growth ◽  
Dynamical Evolution ◽  
Thin Film Deposition ◽  
Fractal Model ◽  
Film Deposition ◽  
Thin Film Growth ◽  
Small Cluster ◽  
Diffusion Controlled ◽  
Cluster Diffusion

In this paper, we briefly review a model that describes the diffusion-controlled aggregation exhibited by particles as they are deposited on a surface. This model allows us to understand many experiments of thin film deposition. In the Sec. 1, we describe the model, which incorporates deposition, particle and cluster diffusion, and aggregation. In Sec. 2, we study the dynamical evolution of the model. Finally, we analyze the effects of small cluster mobility and show that the introduction of cluster diffusion dramatically affects the dynamics of film growth. Some of these effects can be tested experimentally.

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