Thin-film deposition modeling of hydrogenated amorphous silicon in the afterglow of argon plasma

2013 ◽  
Vol 88 ◽  
pp. 872-883 ◽  
Author(s):  
S.W. Chau ◽  
Q.T. Pham ◽  
M.N. Nguyen
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Argon Plasma ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Deposition Modeling ◽  
Hydrogenated Amorphous

Hydrogenated Amorphous Silicon Thin-Film Deposition by Direct Photo-Enhanced Decomposition of Silane Using an Internal Hydrogen Discharge Lamp.

1986 ◽  
Vol 70 ◽  
Author(s):  
P. A. Robertson ◽  
W. I. Milne
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Film Growth ◽  
Hydrogenated Amorphous Silicon ◽  
Thin Film Deposition ◽  
High Energy ◽  
Film Deposition ◽  
Discharge Lamp ◽  
Hydrogen Discharge ◽  
Hydrogenated Amorphous

ABSTRACTHydrogenated amorphous silicon (a-Si:H) thin films have been deposited from silane using a novel photo-enhanced decomposition technique. The system comprises a hydrogen discharge lamp contained within the reaction vessel; this unified approach allows high energy photon excitation of the silane molecules without absorption by window materials or the need for mercury sensitisation. The film growth rates (exceeding 4 Å/s) and material properties obtained are comparable to those of films produced by plasma-enhanced CVD techniques. The reduction of energetic charged particles in the film growth region should enable the fabrication of cleaner semiconductor/insulator interfaces in thin-film transistors.

Hydrogenated Nanocrystalline Silicon Thin Film Transistor Array for X-ray Detector Application

2008 ◽  
Vol 1066 ◽  
Author(s):  
Kyung-Wook Shin ◽  
Mohammad R. Esmaeili-Rad ◽  
Andrei Sazonov ◽  
Arokia Nathan
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Threshold Voltage ◽  
Hydrogenated Amorphous Silicon ◽  
Nanocrystalline Silicon ◽  
Amorphous Selenium ◽  
Breakdown Field ◽  
Storage Capacitor ◽  
X Ray ◽  
Hydrogenated Amorphous

ABSTRACTHydrogenated nanocrystalline silicon (nc-Si:H) has strong potential to replace the hydrogenated amorphous silicon (a-Si:H) in thin film transistors (TFTs) due to its compatibility with the current industrial a-Si:H processes, and its better threshold voltage stability [1]. In this paper, we present an experimental TFT array backplane for direct conversion X-ray detector, using inverted staggered bottom gate nc-Si:H TFT as switching element. The TFTs employed a nc-Si:H/a-Si:H bilayer as the channel layer and hydrogenated amorphous silicon nitride (a-SiNx) as the gate dielectric; both layers deposited by plasma enhanced chemical vapor deposition (PECVD) at 280°C. Each pixel consists of a switching TFT, a charge storage capacitor (Cpx), and a mushroom electrode which serves as the bottom contact for X-ray detector such as amorphous selenium photoconductor. The chemical composition of the a-SiNx was studied by Fourier transform infrared spectroscopy. Current-voltage measurements of the a-SiNx film demonstrate that a breakdown field of 4.3 MV/cm.. TFTs in the array exhibits a field effect mobility (μEF) of 0.15 cm2/V·s, a threshold voltage (VTh) of 5.71 V, and a subthreshold leakage current (Isub) of 10−10 A. The fabrication sequence and TFT characteristics will be discussed in details.

Deposition of diamond-like carbon

1993 ◽  
Vol 342 (1664) ◽  
pp. 277-286 ◽  
Keyword(s):  
Thin Film ◽  
Amorphous Carbon ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Diamond Like Carbon ◽  
Hydrogenated Amorphous Carbon ◽  
Sizeable Fraction ◽  
Deposition Processes ◽  
Hydrogenated Amorphous

Diamond-like carbon refers to forms of amorphous carbon and hydrogenated amorphous carbon containing a sizeable fraction of sp 3 bonding, which makes them mechanically hard, infrared transparent and chemically inert. This paper discusses the various thin film deposition processes used to form diamond-like carbon and the deposition mechanisms responsible for promoting the metastable sp 3 bonding.

Performance of thin hydrogenated amorphous silicon thin‐film transistors

1991 ◽  
Vol 69 (4) ◽  
pp. 2339-2345 ◽  
Author(s):  
J. Kanicki ◽  
F. R. Libsch ◽  
J. Griffith ◽  
R. Polastre
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Thin Film Transistors ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Thin Film ◽  
Hydrogenated Amorphous
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