Novel Preparation Method of Thin Films by Ablation Plasma produced by Intense Pulsed Ion Beam Evaporation

2001 ◽  
Vol 697 ◽  
Author(s):  
Kiyoshi Yatsui ◽  
Hisayuki Suematsu ◽  
Weihua Jiang ◽  
Tsuneo Suzuki ◽  
Sung-Chae Yang ◽  
...  
Keyword(s):  
Thin Films ◽  
Preparation Method ◽  
Ion Beam ◽  
Industrial Applications ◽  
Pulsed Power ◽  
High Deposition Rate ◽  
Evaporation Method ◽  
Power Machine ◽  
Via Holes ◽  
Ablation Plasma

AbstractA novel preparation method of thin films has been successfully developed by high-density ablation plasma produced by pulsed ion-beam evaporation method. The preparation is available with extremely high deposition rate (with cm/s), without heating the substrate, in a vacuum, with good stoichiometry. As an example, the preparation of phosphoresecent SrAl2O4:Eu, Dy thin films will be shown. Furthermore, a new method has been developed of the synthesis of ultrafine nanosize powders by use of microexplosion of pulsed wire discharge. As an example, the synthesis of NiFe2O4 powders will be shown, where two wires of nickel and iron were exploded by pulsed current. In addition, we have succeeded in the preparation of tungsten thin films within via holes in LSI by use of pulsed ion beam-evaporation method. In addition to the huge power per shot, a new machine has been developed of highly repetitive, pulsed power machine for the industrial applications.

Characteristics of Polycrystalline Silicon thin Films Prepared by Pulsed Ion-Beam Evaporation

2001 ◽  
Vol 697 ◽  
Author(s):  
Sung-Chae Yang ◽  
Ali Fazlat ◽  
Hisayuki Suematsu ◽  
Weihua Jiang ◽  
Kiyoshi Yatsui
Keyword(s):  
Thin Films ◽  
Deposition Rate ◽  
Polycrystalline Silicon ◽  
Ion Beam ◽  
High Deposition Rate ◽  
Silicon Thin Films ◽  
Good Crystallinity ◽  
Ablation Plasma ◽  
Evaporation Technique ◽  
Diffraction Peaks

AbstractUsing intense pulsed ion-beam evaporation technique, we have succeeded in the preparation of polycrystalline silicon thin films on silicon substrate without impurities. Good crystallinity and high deposition rate have been achieved without heating the substrate. The crystallinity of poly-Si film has been improved with increasing the density of the ablation plasma. The intense diffraction peaks of poly-Si thin films can be obtained by using the substrate bias system. The crystallinity and the deposition rate of poly-Si thin films are increased by negative bias voltage for the substrate.

Preparation of thin films of dielectric materials using high-density ablation plasma produced by intense pulsed ion beam

1998 ◽  
Vol 54 (1-3) ◽  
pp. 219-223 ◽  
Author(s):  
Kiyoshi Yatsui ◽  
Tomihiro Sonegawa ◽  
Katsuhiko Ohtomo ◽  
Weihua Jiang
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Dielectric Materials ◽  
High Density ◽  
Ablation Plasma

Preparation of silicon thin films by intense pulsed ion-beam evaporation method with low temperature process

2007 ◽  
Vol 201 (9-11) ◽  
pp. 4961-4964 ◽  
Author(s):  
Jung-Hui Lee ◽  
Byung-Yoon Chu ◽  
Byoung-Jung Choi ◽  
Sung-Chae Yang
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Ion Beam ◽  
Evaporation Method ◽  
Silicon Thin Films ◽  
Low Temperature Process

Thermoelectric Properties of B12+xC3-x Thin Films Prepared by Pulsed Ion-Beam Evaporation

2001 ◽  
Vol 697 ◽  
Author(s):  
Hisayuki Suematsu ◽  
Kazuo Kitajima ◽  
Ichiro Ruiz ◽  
Tetsuo Suzuki ◽  
Weihua Jiang ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermoelectric Properties ◽  
Room Temperature ◽  
Ion Beam ◽  
Nominal Composition ◽  
X Ray Diffraction ◽  
Substrate Heating ◽  
Glass Substrates ◽  
Ablation Plasma ◽  
A Current

AbstractThin films of boron carbide (B12+xC3-x) were prepared on glass substrates by a pulsed ion-beam evaporation method. A pulsed proton beam with an energy of 1 MV (peak) and a current of 60 kA was focused on sintered B12+xC3-x targets. Ablation plasma was formed from the irradiated targets and thin films were prepared on Pyrex and SiO2 glass substrates at room temperature. From results of X-ray diffraction, the thin films consisted of a B12+xC3-x phase. Using a known relationship between the composition and the lattice parameters, the composition of B12+x1C3-x thin films was estimated to be x = 0.3 and 1.0, which were close to the nominal composition of the targets. These results indicate that B12+x1C3-x with different carbon contents has been successfully prepared by IBE without substrate heating or sample annealing. Thermoelectric properties of the thin films were measured. A B12+x1C3-x thin film with estimated composition of x =0.9 exhibited the highest power factor at room temperature among the B12+x1C3-x samples reported.

Imaging Thin Films of Nanoporous Low-k Dielectrics: Comparison between Ultramicrotomy and Focused Ion Beam Preparations for Transmission Electron Microscopy

2005 ◽  
Vol 12 (2) ◽  
pp. 156-159 ◽  
Author(s):  
Leslie E. Thompson ◽  
Philip M. Rice ◽  
Eugene Delenia ◽  
Victor Y. Lee ◽  
Phillip J. Brock ◽  
...  
Keyword(s):  
Thin Films ◽  
Cross Section ◽  
Focused Ion Beam ◽  
Preparation Method ◽  
Ion Beam ◽  
Specimen Preparation ◽  
Ion Milling ◽  
Transmission Electron ◽  
Low K ◽  
Diamond Knife

Ultramicrotomy, the technique of cutting nanometers-thin slices of material using a diamond knife, was applied to prepare transmission electron microscope (TEM) specimens of nanoporous poly(methylsilsesquioxane) (PMSSQ) thin films. This technique was compared to focused ion beam (FIB) cross-section preparation to address possible artifacts resulting from deformation of nanoporous microstructure during the sample preparation. It was found that ultramicrotomy is a successful TEM specimen preparation method for nanoporous PMSSQ thin films when combined with low-energy ion milling as a final step. A thick, sacrificial carbon coating was identified as a method of reducing defects from the FIB process which included film shrinkage and pore deformation.

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