Quick preparation of thin films and nanosize powders by high-density ablation plasma produced by intense pulsed ion beam

Author(s):  
K. Yatsui ◽  
W. Jiang ◽  
H. Suematsu ◽  
T. Suzuki ◽  
Y. Kinemuchi ◽  
...  
1998 ◽  
Vol 54 (1-3) ◽  
pp. 219-223 ◽  
Author(s):  
Kiyoshi Yatsui ◽  
Tomihiro Sonegawa ◽  
Katsuhiko Ohtomo ◽  
Weihua Jiang

2001 ◽  
Vol 697 ◽  
Author(s):  
Kiyoshi Yatsui ◽  
Hisayuki Suematsu ◽  
Weihua Jiang ◽  
Tsuneo Suzuki ◽  
Sung-Chae Yang ◽  
...  

AbstractA novel preparation method of thin films has been successfully developed by high-density ablation plasma produced by pulsed ion-beam evaporation method. The preparation is available with extremely high deposition rate (with cm/s), without heating the substrate, in a vacuum, with good stoichiometry. As an example, the preparation of phosphoresecent SrAl2O4:Eu, Dy thin films will be shown. Furthermore, a new method has been developed of the synthesis of ultrafine nanosize powders by use of microexplosion of pulsed wire discharge. As an example, the synthesis of NiFe2O4 powders will be shown, where two wires of nickel and iron were exploded by pulsed current. In addition, we have succeeded in the preparation of tungsten thin films within via holes in LSI by use of pulsed ion beam-evaporation method. In addition to the huge power per shot, a new machine has been developed of highly repetitive, pulsed power machine for the industrial applications.


MRS Bulletin ◽  
1990 ◽  
Vol 15 (3) ◽  
pp. 36-44 ◽  
Author(s):  
Tomasz Jagielinski

Recording in the 1990s will be high density, high frequency, in-contact recording on high coercivity media. Today's state-of-the-art head materials, NiFe, Sendust and amorphous alloys, will be used in some applications. However, layered structured and artificial superlattices will become the key head technologies of the future. Use of advanced preparation techniques will allow “true” materials engineering and the fabrication of devices to incredibly accurate specifications.These very high density recording systems will require optimal inter-play between all the components—media, head, and head/media interface. Future media will be very smooth, high coercivity, large moment thin films. The head/media spacing will be less than 50 nm, and recording at more than 100 MHz will be required. Single-track heads will be replaced by very narrow track-width multitrack devices in high data rate recorders. Thin film heads will provide the answer to most of the problems of large recording fields and high frequency response. These changes will define new requirements for head materials, some of which cannot be met by currently used materials. Conventional ferrite heads will not be found in high performance recording systems; thin film inductive and magnetoresistive (MR) heads (Figure 1) will be widely used. Thin films, metals and alloys, both crystalline and amorphous, layered structures and artificial superlattices will be the key head technologies in the future. New material preparation technologies, MBE (molecular beam epitaxy), MOCVD (molecular chemical vapor deposition), sputtering, and ion beam deposition are becoming increasingly available and less expensive. These methods will be used to fabricate future devices to incredibly accurate specifications.


2001 ◽  
Vol 697 ◽  
Author(s):  
Hisayuki Suematsu ◽  
Kazuo Kitajima ◽  
Ichiro Ruiz ◽  
Tetsuo Suzuki ◽  
Weihua Jiang ◽  
...  

AbstractThin films of boron carbide (B12+xC3-x) were prepared on glass substrates by a pulsed ion-beam evaporation method. A pulsed proton beam with an energy of 1 MV (peak) and a current of 60 kA was focused on sintered B12+xC3-x targets. Ablation plasma was formed from the irradiated targets and thin films were prepared on Pyrex and SiO2 glass substrates at room temperature. From results of X-ray diffraction, the thin films consisted of a B12+xC3-x phase. Using a known relationship between the composition and the lattice parameters, the composition of B12+x1C3-x thin films was estimated to be x = 0.3 and 1.0, which were close to the nominal composition of the targets. These results indicate that B12+x1C3-x with different carbon contents has been successfully prepared by IBE without substrate heating or sample annealing. Thermoelectric properties of the thin films were measured. A B12+x1C3-x thin film with estimated composition of x =0.9 exhibited the highest power factor at room temperature among the B12+x1C3-x samples reported.


2001 ◽  
Vol 697 ◽  
Author(s):  
Sung-Chae Yang ◽  
Ali Fazlat ◽  
Hisayuki Suematsu ◽  
Weihua Jiang ◽  
Kiyoshi Yatsui

AbstractUsing intense pulsed ion-beam evaporation technique, we have succeeded in the preparation of polycrystalline silicon thin films on silicon substrate without impurities. Good crystallinity and high deposition rate have been achieved without heating the substrate. The crystallinity of poly-Si film has been improved with increasing the density of the ablation plasma. The intense diffraction peaks of poly-Si thin films can be obtained by using the substrate bias system. The crystallinity and the deposition rate of poly-Si thin films are increased by negative bias voltage for the substrate.


Author(s):  
Dudley M. Sherman ◽  
Thos. E. Hutchinson

The in situ electron microscope technique has been shown to be a powerful method for investigating the nucleation and growth of thin films formed by vacuum vapor deposition. The nucleation and early stages of growth of metal deposits formed by ion beam sputter-deposition are now being studied by the in situ technique.A duoplasmatron ion source and lens assembly has been attached to one side of the universal chamber of an RCA EMU-4 microscope and a sputtering target inserted into the chamber from the opposite side. The material to be deposited, in disc form, is bonded to the end of an electrically isolated copper rod that has provisions for target water cooling. The ion beam is normal to the microscope electron beam and the target is placed adjacent to the electron beam above the specimen hot stage, as shown in Figure 1.


Author(s):  
J. Kulik ◽  
Y. Lifshitz ◽  
G.D. Lempert ◽  
S. Rotter ◽  
J.W. Rabalais ◽  
...  

Carbon thin films with diamond-like properties have generated significant interest in condensed matter science in recent years. Their extreme hardness combined with insulating electronic characteristics and high thermal conductivity make them attractive for a variety of uses including abrasion resistant coatings and applications in electronic devices. Understanding the growth and structure of such films is therefore of technological interest as well as a goal of basic physics and chemistry research. Recent investigations have demonstrated the usefulness of energetic ion beam deposition in the preparation of such films. We have begun an electron microscopy investigation into the microstructure and electron energy loss spectra of diamond like carbon thin films prepared by energetic ion beam deposition.The carbon films were deposited using the MEIRA ion beam facility at the Soreq Nuclear Research Center in Yavne, Israel. Mass selected C+ beams in the range 50 to 300 eV were directed onto Si {100} which had been etched with HF prior to deposition.


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