Effect of Crystalization On Photoluminescence of ER2O3 Thin Films

2001 ◽  
Vol 694 ◽  
Author(s):  
Xiaoman Duan ◽  
Sajan Saini ◽  
Keven Chen ◽  
Michel Lipson ◽  
Jurgen Michel ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Elevated Temperature ◽  
Grain Growth ◽  
Reactive Sputtering ◽  
Significant Enhancement ◽  
Large Crystal ◽  
Polycrystalline Structures ◽  
Photoluminescence Peak ◽  
The Ideal

AbstractThe effect of microstructures on the photoluminescence of Er2O3thin films has been systematically studied in this paper. The Er2O3 film was fabricated via reactive sputtering of Er metal in an Ar/O2 atmosphere. The as-deposited thin film contained both amorphous and polycrystalline structures, which showed weak photoluminescence at 1.55 µm. Annealing at an elevated temperature from 650 to 1050 °C in O2 ambient significantly incorporated oxygen into the lattice and strongly promoted crystalline grain growth, which in turn dramatically induced the transaction of photoluminescence from 1.55 µm to 1.541 µm. The ideal large crystal Er2O3 structure with fcc-Er2O3 and bcc-Er2O3 precipitates was obtained by conducting a two-step annealing (650 °C for 5 hours followed by 1020 °C for 2 hours) which resulted in a sharp photoluminescence peak at 1.541 µm. Further significant enhancement of PL at 1.541 µm was achieved via RTA at 1050 °C for 30 seconds to introduce more fcc-Er2O3 precipitates into the bcc-Er2O3 matrix.

scholarly journals In-plane stimulated emission of polycrystalline CH3NH3PbBr3 perovskite thin films

RSC Advances ◽  
2020 ◽  
Vol 10 (5) ◽  
pp. 2703-2708
Author(s):  
Ju Wang ◽  
Wei Liu ◽  
Cuncun Wu ◽  
Ning Zhu ◽  
Congyue Liu ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Stimulated Emission ◽  
Polycrystalline Films ◽  
Large Crystal

MAPbBr3 perovskite thin film contains large crystal flakes, which support the in-plane stimulated emission and its propagation within these polycrystalline films. The emission scatters at the natural or artificial edge of the film.

The Instability of Polycrystalline Thin Films: Experiment and Theory

1988 ◽  
Vol 121 ◽  
Author(s):  
K. T. Miller ◽  
F. F. Lange ◽  
D. B. Marshall
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Free Energy ◽  
Grain Growth ◽  
Spin Coating ◽  
Polycrystalline Thin Film ◽  
Film Stability ◽  
Zirconium Acetate ◽  
Polycrystalline Thin Films ◽  
Thin Film Stability

ABSTRACTDense polycrystalline thin films of ZrO2 (3 and 8 mol% Y2O3) were produced by the pyrolysis of zirconium acetate precursor films, which were deposited on single crystal Al2O3 substrates by spin-coating solutions of zirconium acetate. With grain growth, these films broke into islands of ZrO2 grains. Thermodynamic calculations show that this break up lowers the free energy of the system. These calculations also predict the conditions needed for polycrystalline thin film stability.

Grain Growth by Digm in Ni Thin Film Under High Tensile Stress

1998 ◽  
Vol 516 ◽  
Author(s):  
Zhengyi Jia ◽  
G. Z. Pan ◽  
K. N. Tu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Beam ◽  
Tensile Stress ◽  
Grain Growth ◽  
Experimental Result ◽  
Calculated Stress

AbstractElectron beam evaporated Ni thin films are found to have tensile stress of 1.2 Gpa. The stress is relieved upon heating, accompanied by grain growth. The calculated stress matches the experimental result and a mechanism of grain growth is proposed.

Effect of a Boron Additive on the Microstructure and Dielectric Properties of BaTiO3 Thin Films Formed by Nanocrystal Deposition

2013 ◽  
Vol 566 ◽  
pp. 277-280
Author(s):  
Yoko Takezawa ◽  
Minoru Ryu ◽  
Yoshiki Iwazaki ◽  
Toshimasa Suzuki ◽  
Youichi Mizuno ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Constant ◽  
Dielectric Properties ◽  
Low Temperature ◽  
Grain Growth ◽  
Particle Sizes ◽  
Sintering Process ◽  
Mn Doped

Highly crystallized BaTiO3 thin films were fabricated by a nanocrystal sintering process. Boron alkoxide was introduced into a slurry of Mn-doped BaTiO3 nanocrystals with particle sizes of 5-7 nm. The deposited nanocrystal film on a (111)-oriented Pt/TiO2/Al2O3 substrate was sintered at a low temperature of 800 °C and the obtained film had highly densified and oriented microstructures. We found that the boron additive enhanced the grain growth of nanoparticles and as a result the dielectric constant of the thin film increased to 1100 at 10 kHz, which is much higher than that of undoped BaTiO3 thin films.

scholarly journals Highly Uniform Large-Area (100 cm2) Perovskite CH3NH3PbI3 Thin-Films Prepared by Single-Source Thermal Evaporation

Coatings ◽  
2018 ◽  
Vol 8 (8) ◽  
pp. 256 ◽  
Author(s):  
Guangxing Liang ◽  
Huabin Lan ◽  
Ping Fan ◽  
Chunfeng Lan ◽  
Zhuanghao Zheng ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Solar Cell ◽  
Thermal Evaporation ◽  
Perovskite Solar Cell ◽  
Stoichiometric Ratio ◽  
Single Source ◽  
Large Area ◽  
Highly Uniform ◽  
The Ideal

In this work, we report the reproducible preparation method of highly uniform large-area perovskite CH3NH3PbI3 thin films by scalable single-source thermal evaporation with the area of 100 cm2. The microstructural and optical properties of large-area CH3NH3PbI3 thin films were investigated. The dense, uniform, smooth, high crystallinity of large-area perovskite thin film was obtained. The element ratio of Pb/I was close to the ideal stoichiometric ratio of CH3NH3PbI3 thin film. These films show a favorable bandgap of 1.58 eV, long and balanced carrier-diffusion lengths. The CH3NH3PbI3 thin film perovskite solar cell shows a stable efficiency of 7.73% with almost no hysteresis, indicating a single-source thermal evaporation that is suitable for a large area perovskite solar cell.

scholarly journals An Investigation on Structural and Optical Properties of Zn1−xMgxS Thin Films Deposited by RF Magnetron Co-Sputtering Technique

Coatings ◽  
2020 ◽  
Vol 10 (8) ◽  
pp. 766
Author(s):  
Muhammad Shahriar Bashar ◽  
Yulisa Yusoff ◽  
Siti Fazlili Abdullah ◽  
Mashudur Rahaman ◽  
Puvaneswaran Chelvanathan ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Optical Properties ◽  
Elevated Temperature ◽  
Structural Analysis ◽  
Cubic Phase ◽  
Rf Power ◽  
Structural And Optical Properties ◽  
Glass Substrates ◽  
Thin Film Photovoltaics

In this paper, Zn1−xMgxS thin films were co-sputtered on glass substrates using ZnS and MgS binary target materials under various applied RF power. The compositional ratio of Zn1−xMgxS films was varied by changing the RF power at an elevated temperature of 200 °C. The structural and optical properties were studied in detail. The structural analysis shows that the co-sputtered Zn1−xMgxS thin films have a cubic phase with preferred orientation along the (111) plane. The lattice constant and ionicity suggest the presence of a zincblende structure in Zn1−xMgxS thin films. Zn1−xMgxS thin films have transmittance over 76%. The extrapolation of optical characteristics indicates that direct bandgaps, ranging from 4.39 to 3.25 eV, have been achieved for the grown Zn1−xMgxS films, which are desirable for buffer or window layers of thin film photovoltaics.

Properties of Ag Doped CdTe Thin Film Prepared by Stacked Elemental Layer (SEL) Method

2012 ◽  
Vol 488-489 ◽  
pp. 742-747
Author(s):  
Subramani Shanmugan ◽  
Devarajan Mutharasu ◽  
Hassan Zainuriah
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Surface Roughness ◽  
Transition Metals ◽  
Grain Growth ◽  
Cubic Phase ◽  
Light Sources ◽  
Cdte Thin Film ◽  
Elemental Layer

Thin films of elements (Cd,Te,Ag) were layered as a stack (Te/Cd/Te/Ag/Cd) for doping process with different Ag and Cd thickness by SEL method. The XRD results were depicted the presence of Cubic phase CdTe with (111) orientation along with Ag2Te, CdAgTe, AgTe phases. The peaks related to Ag atom at higher concentration evinced the presence of non-reacted Ag atoms on the surface with higher Ag concentration. The observed results showed the growth of CdTe crystals in (111) orientation with high Ag concentration. The AFM results of the annealed stack were clearly indicated the influence of Ag concentration in grain growth as well as surface roughness. Photo-resistivity studies of the annealed stacks also revealed the effect of Ag concentration in reducing the resistance with difference light sources. The observed results suggested that the SEL method could be used for effective doping of transition metals to achieve desired properties.

Measurement of the Dependence of Stress and Strain on Crystallographic Orientation in Cu and Al thin Films

1994 ◽  
Vol 356 ◽  
Author(s):  
E. M. Zielinski ◽  
R. P. Vinci ◽  
J. C. Bravman
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Yield Stress ◽  
Grain Growth ◽  
Crystallographic Orientation ◽  
Room Temperature ◽  
Abnormal Grain Growth ◽  
Stress And Strain ◽  
Al Thin Film ◽  
Individual Grains

AbstractThe orientational dependence of stress and strain was measured for (111) and (110) oriented grains in an Al thin film which hillocked upon heating, and (111) and (100) oriented grains in Cu thin films, one of which exhibits abnormal (100) grain growth. Results from the Al thin film were inconclusive in the evaluation of the Sanchez model for hillocking, however they indicate that the Nix model for the orientational dependence of yield stress is not applicable to individual grains at room temperature. Results from the Cu thin films suggest that suppression of (100) abnormal grain growth is due to isostress averaging among the grains of varying orientation.

scholarly journals EUROPIUM SILICATE THIN FILMS FABRICATED BY RF MAGNETRON SPUTTERING AND THERMAL TREATMENT

2017 ◽  
Vol 24 (1&2) ◽  
pp. 147-152
Author(s):  
Young Chul Shin ◽  
Eun Hong Kim ◽  
Tae Geun Kim
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Rf Sputtering ◽  
Reactive Sputtering ◽  
Rf Magnetron Sputtering ◽  
The Other ◽  
X Ray ◽  
Layer Structures ◽  
Ar Gas ◽  
Photoluminescence Peak

We report the fabrication and optical characteristics of europium silicate thin films. Layer structures of Eu2O3/SiOX/Si (100) were deposited by an rf-sputtering method and annealed at 1100°C by rapid thermal annealing (RTA). Two methods were used for the deposition of SiOX layer: One was deposited by sputtering using SiO2 target (Ar gas at a rate of 50 sccm) and the other was deposited by reactive sputtering using Si target (Ar gas at a rate of 45 sccm, with an O2 gas at a rate of 5 sccm). Photoluminescence peak at 430 nm was observed in the sample composed of SiOx  interlayer sputtered from SiO2 target. In comparison, PL peak at 570 nm was observed in the other sample, the SiOx layer of which was deposited by reactive sputtering from Si target. The compositional distributions of these samples were analyzed by X-ray photoelectron spectroscopy (XPS).

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