C-V and G-V Measurements Showing Single Electron Trapping in Nanocrystalline Silicon Dot Embedded in MOS Memory Structure

2001 ◽  
Vol 686 ◽  
Author(s):  
Shaoyun Huang ◽  
Souri Banerjee ◽  
Shunri Oda
Keyword(s):  
Electric Field ◽  
Thermal Activation ◽  
Room Temperature ◽  
Nanocrystalline Silicon ◽  
Tunneling Probability ◽  
Activation Mechanism ◽  
Flat Band ◽  
Memory Retention ◽  
Charge Loss ◽  
Nanocrystalline Si

AbstractWe prepared a SiO2/nanocrystalline Si (nc-Si)/SiO2 sandwich structure. A clear positive shift in C-V and G-V curves due to electrons trapped in nc-Si dots has been observed at room temperature. The peak in conductance around flat band condition indicates that a trap event had occurred where an electron is stored per nc-Si dot. A logarithmic charge loss function is found and this discharging process is independent of the thermal activation mechanism. The longer memory retention time and logarithmic charge loss in the dots are explained by a “built-in” electric field through the tunnel oxide, which varies with time, resulting in a variable tunneling probability. The electric repulsion induced by the built-in electric field hinders the discharging of electrons remained in the dots.

scholarly journals Oxidation of nanocrystalline silicon at room temperature and various humidity

2019 ◽  
Author(s):  
Vadim M Popelensky ◽  
Sergey G Dorofeev ◽  
Nikolay N Kononov ◽  
Sergey S Bubenov ◽  
Alexander A Vinokurov
Keyword(s):  
Room Temperature ◽  
Quartz Crystal ◽  
Integral Intensity ◽  
Mass Gain ◽  
Nanocrystalline Silicon ◽  
Square Root ◽  
Oxide Layer Thickness ◽  
Dry Air ◽  
Air Film ◽  
Nanocrystalline Si

Oxidation of HF vapor-etched nanocrystalline silicon films, prepared by drop coating from nanocrystalline Si sol in acetonitrile, was studied. Oxidation of nc-Si at room temperature in air with 5% and 86% relative humidity was observed by means of IR spectroscopy for 2 days. The change in film mass after 15 hours of oxidation was determined using quartz crystal microbalance. In dry air, film mass and integral intensity of bands attributed to vibrations in Si3-x‒Si‒Hx and Si-O-Si groups changed linearly with time. In humid air, intensity of in Si3-x‒Si‒Hx band decays exponentially and intensity of Si-O-Si band increases as a square root of oxidation time. Film mass gain after 15 hours of oxidation corresponds to an average oxide layer thickness of 0.02 nm in dry air and 0.51 nm in wet air.

Field-assisted ionization theory for microscopists

1994 ◽  
Vol 52 ◽  
pp. 820-821
Author(s):  
Patrick P. Camus
Keyword(s):  
Electric Field ◽  
Electron Tunneling ◽  
Ionization Probability ◽  
Critical Distance ◽  
Tunneling Probability ◽  
Field Ionization ◽  
Radius Of Curvature ◽  
Field Evaporation ◽  
A Value ◽  
Ion Emission

The theory of field ion emission is the study of electron tunneling probability enhanced by the application of a high electric field. At subnanometer distances and kilovolt potentials, the probability of tunneling of electrons increases markedly. Field ionization of gas atoms produce atomic resolution images of the surface of the specimen, while field evaporation of surface atoms sections the specimen. Details of emission theory may be found in monographs.Field ionization (FI) is the phenomena whereby an electric field assists in the ionization of gas atoms via tunneling. The tunneling probability is a maximum at a critical distance above the surface,xc, Fig. 1. Energy is required to ionize the gas atom at xc, I, but at a value reduced by the appliedelectric field, xcFe, while energy is recovered by placing the electron in the specimen, φ. The highest ionization probability occurs for those regions on the specimen that have the highest local electric field. Those atoms which protrude from the average surfacehave the smallest radius of curvature, the highest field and therefore produce the highest ionizationprobability and brightest spots on the imaging screen, Fig. 2. This technique is called field ion microscopy (FIM).

Thermal activation in Permalloy nanorectangles at room temperature

2006 ◽  
Vol 372 (1-2) ◽  
pp. 286-289 ◽  
Author(s):  
E. Martinez ◽  
L. Lopez-Diaz ◽  
L. Torres ◽  
C.J. Garcia-Cervera
Keyword(s):  
Thermal Activation ◽  
Room Temperature

scholarly journals Electric Field Dependence of the Fluorescence Intensity of Solute Molecules and Fourth Order Effects

1985 ◽  
Vol 40 (9) ◽  
pp. 874-876
Author(s):  
Hilmar Bischof ◽  
Wolfram Baumann
Keyword(s):  
Electric Field ◽  
External Electric Field ◽  
Field Dependence ◽  
Fourth Order ◽  
Fluorescence Intensity ◽  
Room Temperature ◽  
Order Effects ◽  
Electric Field Dependence ◽  
Total Fluorescence

Abstract The effect of an external electric field on the total fluorescence of solute molecules is studied up to fourth order theoretically, and is checked experimentally with 4´-N,N-dimethylamino- 4-nitrostilbene in dioxane at room temperature.

Introduction of Fine Engineered Domain Configuration into Potassium Niobate Single Crystals

2007 ◽  
Vol 350 ◽  
pp. 89-92
Author(s):  
Keisuke Yokoh ◽  
Tomomitsu Muraishi ◽  
Song Min Nam ◽  
Hirofumi Kakemoto ◽  
Takaaki Tsurumi ◽  
...  
Keyword(s):  
Electric Field ◽  
Single Crystals ◽  
Room Temperature ◽  
Single Domain ◽  
Potassium Niobate ◽  
Field Exposure ◽  
Domain State ◽  
Domain Configuration ◽  
Dc Electric Field ◽  
Direction Of Polarization

To induce fine engineered domain configurations into potassium niobate (KNbO3) single crystals, two kinds of methods were performed, i.e., (1) high DC electric field exposure along the opposite direction of polarization of KNbO3 single-domain crystals at room temperature, and (2) introduction of randomly oriented fine domain configuration by heat treatment at 700 °C and then high DC electric field exposure along [001]c direction of KNbO3 multidomain crystals at room temperature. When the method (1) was performed, finally, the poled KNbO3 crystals became to single-domain state again through the formation of multidomain state. On the other hand, the KNbO3 multidomain crystals were obtained by using the method (2), and an enhancement of piezoelectric-related properties was observed.

Electric field control of magnetization in Nd1−xSmxFeO3 (x = 0, 0.2, and 0.4) at room temperature

2014 ◽  
Vol 104 (8) ◽  
pp. 082415 ◽  
Author(s):  
Chuanjiang Du ◽  
Hongwei Qin ◽  
Shaoqing Ren ◽  
Lei Zhao ◽  
Minglei Zhao ◽  
...  
Keyword(s):  
Electric Field ◽  
Room Temperature ◽  
Field Control

Effects of surface electric field on SnO 2 room temperature gas sensors fabricated on nanospike substrates

2012 ◽  
Author(s):  
Haizhou Ren ◽  
Pengtao Wang ◽  
Haibin Huo ◽  
Mengyan Shen ◽  
Marina Ruths ◽  
...  
Keyword(s):  
Electric Field ◽  
Gas Sensors ◽  
Room Temperature ◽  
Surface Electric Field

About the Electrical Activation of 1×1020 cm-3 Ion Implanted Al in 4H-SiC at Annealing Temperatures in the Range 1500 - 1950°C

2018 ◽  
Vol 924 ◽  
pp. 333-338 ◽  
Author(s):  
Roberta Nipoti ◽  
Alberto Carnera ◽  
Giovanni Alfieri ◽  
Lukas Kranz
Keyword(s):  
Activation Energy ◽  
Sheet Resistance ◽  
Annealing Time ◽  
Thermal Activation ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Thermal Activation Energy ◽  
Electrical Activation ◽  
Temperature Range ◽  
Annealing Temperatures

The electrical activation of 1×1020cm-3implanted Al in 4H-SiC has been studied in the temperature range 1500 - 1950 °C by the analysis of the sheet resistance of the Al implanted layers, as measured at room temperature. The minimum annealing time for reaching stationary electrical at fixed annealing temperature has been found. The samples with stationary electrical activation have been used to estimate the thermal activation energy for the electrical activation of the implanted Al.

Sign in / Sign up

Export Citation Format

Share Document