AlGaAs/GaAs Double-Heterostructure Optical Waveguide on Si Substrates

1991 ◽  
Vol 228 ◽  
Author(s):  
T. Yuasa ◽  
M. Umeno ◽  
S. Sakai ◽  
N. Wada ◽  
Y. Ueta
Keyword(s):  
Integrated Circuits ◽  
Optical Waveguides ◽  
Chemical Vapor ◽  
Step Method ◽  
Index Method ◽  
Double Heterostructure ◽  
Si Substrates ◽  
Effective Index Method ◽  
Gaas Devices ◽  
Cladding Layers

ABSTRACTAlGaAs/GaAs double-heterostructure (DH) optical waveguides on Si substrates which is important in future opto-electric integrated circuits (OEICs) utilizing both Si and GaAs devices is analyzed by the effective index method and fabricated by metalorganic chemical vapor deposition (MOCVD).The structures contain 0.8-μm-thick GaAs guiding layer sandwiched between two 1-μm-thick Al0.1Ga0.9 As cladding layers. All the layers were grown by MOCVD on (100) 2°-off Si substrates by two step method. A top cladding layer was etched leaving 2-μm wide mesa-stripes. The etched depth was changed from 0.65 to 0.90 μm. The field profiles were calculated and measured for 1.3 μm wavelength light. The measured and calculated profiles agree quite well with each other for all the. waveguides having different mesa height. This agreement makes us possible to design more complicated AlGaAs/GaAs waveguides and modulators on Si substrates.

Monolithic Integration of Si and GaAs Devices

1986 ◽  
Vol 67 ◽  
Author(s):  
H. K. Choi ◽  
G. W. Turner ◽  
B-Y. Tsaur ◽  
T. H. Windhorn
Keyword(s):  
Monolithic Integration ◽  
Double Heterostructure ◽  
Si Substrates ◽  
Gaas Substrates ◽  
Gaas Devices ◽  
Voltage Pulses ◽  
First Time

ABSTRACTIntegration of Si MOSFETs with GaAs MESFETs and with GaAs/AlGaAs double-heterostructure LEDs on monolithic GaAs/Si substrates is reported. Both Si MOSFETs and GaAs MESFETs show characteristics comparable to those for devices fabricated on separate Si and GaAs substrates. In LED/MOSFET integration, the cathode of each LED is connected with the drain of a MOSFET. This is the first time that Si and GaAs devices have been monolithically interconnected. LED modulation rates up to 27 Mbps have been achieved by applying a stream of voltage pulses to the MOSFET gate.

Selective Area Epitaxy of GaAs Optical Waveguides by Laser Assisted Chemical Vapor Deposition

1995 ◽  
Vol 397 ◽  
Author(s):  
J.C. Roberts ◽  
K.S. Boutros ◽  
S.M. Bedair
Keyword(s):  
Chemical Vapor Deposition ◽  
Integrated Circuits ◽  
Cross Sections ◽  
Vapor Deposition ◽  
Optical Waveguides ◽  
Chemical Vapor ◽  
Direct Writing ◽  
Selective Area Epitaxy ◽  
Selective Area ◽  
Multimode Waveguides

ABSTRACTDirect writing of GaAs optical waveguides has been achieved by laser assisted chemical vapor deposition (LCVD). The multimode waveguides have gaussian-like cross sections, smooth surfaces, and exhibit losses as low as 5.4 dB/cm. The LCVD technique offers the capability of maskless in situ selective epitaxial growth of diverse multilayer structures, and is therefore a novel alternative for the monolithic integration of optoelectronic integrated circuits.

Growth and Properties of GaN/Si Heterojunction

2005 ◽  
Vol 480-481 ◽  
pp. 531-536
Author(s):  
Hassan Zainuriah ◽  
Sha Shiong Ng ◽  
G.L. Chew ◽  
F.K. Yam ◽  
Mat Johar Abdullah ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Buffer Layer ◽  
Lattice Mismatch ◽  
Chemical Vapor ◽  
Wide Band ◽  
Hexagonal Wurtzite Structure ◽  
Schottky Barriers ◽  
Full Characterization ◽  
Si Substrates ◽  
Aln Buffer

Gallium nitride (GaN) is a highly promising wide band gap semiconductor with applications in high power electronic and optoelectronic devices. Thin films of GaN are most commonly grown in the hexagonal wurtzite structure on sapphire substrates. Growth of GaN onto silicon substrates offers a very attractive opportunity to incorporate GaN devices onto silicon based integrated circuits. Although direct epitaxial growth of GaN films on Si substrates is a difficult task (mainly due to the 17% lattice mismatch present), substantial progress in the crystal quality can be achieved using a buffer layer. A full characterization of the quality of the material needs to be assessed by a combination of different techniques. In this work, a detailed characterization study of GaN thin film grown on Si(111) with AlN buffer layer by low pressure metalorganic chemical vapor deposition (LP-MOCVD) was carried out. Post deposition analysis includes scanning electron microscopy (SEM), x-ray diffraction (XRD), Hall and infrared (IR) spectroscopy techniques. The IR spectra were compared to the calculated spectra generated with a damped single harmonic oscillator model. Through this method, a complete set of reststrahlen parameters (such as ε∞, S, wTO, γ) of the GaN epilayer were obtained. Our results show that the GaN film has a single crystalline structure. Current-voltage characteristics (I-V) of this GaN/Si heterojunction were measured at room temperature. Rectification behavior was observed for this anisotype heterojunction. The electrical characteristics of Ni Schottky barriers on this unintentionally doped n-type film were also investigated. The barrier height of Ni/GaN Schottky barriers has been determined to be 0.93 eV by I-V measurement.

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