Molecular beam epitaxy of GaSb/AlSb optical device layers on Si(100)

1986 ◽  
Vol 67 ◽  
Author(s):  
R. J. Malik ◽  
J. P. van der Ziel ◽  
B. F. Levine ◽  
C. G. Bethea ◽  
P. M. Petroff ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
High Energy ◽  
Optically Pumped ◽  
Optical Device ◽  
Large Lattice ◽  
Photoconductive Detectors ◽  
Film Nucleation ◽  
First Time

ABSTRACTWe report for the first time the growth of GaSb/AlSb multilayers and alloys on Si(100) by molecular beam epitaxy. High quality films were achieved in spite of the large lattice constant mismatch of 12%. Room temperature, optically pumped pulsed lasers emitting at 1.8μm have been demonstrated. Lateral photoconductive detectors with responsivities of 0.18 A/W have also been made. The film nucleation on the Si substrate was observed in-situ by reflection high energy electron diffraction. Characterization of the grown epilayers and preliminary optical device results are described.

A Study on the Growth of Cubic GaN Films Using an AlGaAs Buffer Layer Grown on GaAs (100) by Plasma-Assisted Molecular Beam Epitaxy

2000 ◽  
Vol 639 ◽  
Author(s):  
Ryuhei Kimura ◽  
Kiyoshi Takahashi ◽  
H. T. Grahn
Keyword(s):  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Molecular Beam ◽  
High Energy ◽  
Rf Plasma ◽  
Cubic Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
Cubic Gan

ABSTRACTAn investigation of the growth mechanism for RF-plasma assisted molecular beam epitaxy of cubic GaN films using a nitrided AlGaAs buffer layer was carried out by in-situ reflection high energy electron diffraction (RHEED) and high resolution X-ray diffraction (HRXRD). It was found that hexagonal GaN nuclei grow on (1, 1, 1) facets during nitridation of the AlGaAs buffer layer, but a highly pure, cubic-phase GaN epilayer was grown on the nitrided AlGaAs buffer layer.

Study of As and P Incorporation Behavior in GaAsP by Gas-Source Molecular-Beam Epitaxy

1991 ◽  
Vol 222 ◽  
Author(s):  
B. W. Liang ◽  
H. Q. Hou ◽  
C. W. Tu
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
High Energy ◽  
Ex Situ ◽  
Limited Growth ◽  
Group V ◽  
Group Iii ◽  
Gas Source ◽  
Simple Kinetic Model

ABSTRACTA simple kinetic model has been developed to explain the agreement between in situ and ex situ determination of phosphorus composition in GaAs1−xPx (x < 0.4) epilayers grown on GaAs (001) by gas-source molecular-beam epitaxy (GSMBE). The in situ determination is by monitoring the intensity oscillations of reflection high-energy-electron diffraction during group-V-limited growth, and the ex situ determination is by x-ray rocking curve measurement of GaAs1−xPx/GaAs strained-layer superlattices grown under group-III-limited growth condition.

Photoluminescence of Eu-doped GaN

2011 ◽  
Vol 1342 ◽  
Author(s):  
K.P. O’Donnell
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
High Pressures ◽  
Vapour Phase ◽  
High Energy ◽  
Photoluminescence Excitation ◽  
Vapour Phase Epitaxy ◽  
The University

ABSTRACTThis talk reviews work on the optical properties of Eu-doped GaN at the Semiconductor Spectroscopy laboratory of the University of Strathclyde. The principal experimental technique used has been lamp-based Photoluminescence/Excitation (PL/E) spectroscopy on samples produced mainly by high-energy ion implantation and annealing, either at low or high pressures of nitrogen, as described by Lorenz et al. [1]. These have been supplemented by samples doped in-situ either by Molecular Beam Epitaxy or Metallorganic Vapour Phase Epitaxy. Magneto-optic experiments on GaN:Eu were carried out in collaboration with the University of Bath.

Bi-Based Superconducting Multilayers Obtained by Molecular Beam Epitaxy

1999 ◽  
Vol 13 (09n10) ◽  
pp. 991-996
Author(s):  
M. Salvato ◽  
C. Attanasio ◽  
G. Carbone ◽  
T. Di Luccio ◽  
S. L. Prischepa ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Xrd Analysis ◽  
High Energy ◽  
X Ray Diffraction ◽  
One Dimensional ◽  
X Ray ◽  
Diffraction Model ◽  
Different Thickness

High temperature superconducting multilayers have been obtained depositing Bi2Sr2CuO6+δ(2201) and ACuO2 layers, where A is Ca or Sr, by Molecular Beam Epitaxy (MBE) on MgO and SrTiO3 substrates. The samples, formed by a sequence of 2201/ACuO2 bilayers, have different thickness of ACuO2 layers while the thickness of the 2201 layers is kept constant. The surface structure of each layer has been monitored by in situ Reflection High Energy Electron Diffraction (RHEED) analysis which has confirmed a 2D nucleation growth. X-ray diffraction (XRD) analysis has been used to confirm that the layered structure has been obtained. Moreover, one-dimensional X-ray kinematic diffraction model has been developed to interpret the experimental data and to estimate the period of the multilayers. Resistive measurements have shown that the electrical properties of the samples strongly depend on the thickness of the ACuO2 layers.

Magnetic and Electronic Properties of Fe0.1Sc0.9N/ScN(001)/MgO(001) Films Grown by Radio-Frequency Molecular Beam Epitaxy

2009 ◽  
Vol 1198 ◽  
Author(s):  
Costel Constantin ◽  
Kangkang Wang ◽  
Abhijit Chinchore ◽  
Han-Jong Chia ◽  
John Markert ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Radio Frequency ◽  
Buffer Layer ◽  
Rough Surface ◽  
Quantum Interference ◽  
Molecular Beam ◽  
Film Growth ◽  
Magnetic Measurements ◽  
High Energy

AbstractFe0.1Sc0.9N with a thickness of ˜ 380 nm was grown on top of a ScN(001) buffer layer of ˜ 50 nm, grown on MgO(001) substrate by radio-frequency N-plasma molecular beam epitaxy (rf-MBE). The buffer layer was grown at TS ˜ 800 oC, whereas the Fe0.1Sc0.9N film was grown at TS ˜ 420 oC. In-situ reflection high-energy electron diffraction measurements show that the Fe0.1Sc0.9N film growth starts with a combination of spotty and streaky pattern [indicative of a combination of smooth and rough surface]. After ˜ 10 minutes of growth, the pattern converts to a spotty one [indicative of a rough surface]. Towards the end of the Fe0.1Sc0.9N film growth, the spotty patterns transform into even spottier, but also ring-like indicating a polycrystalline behavior. Superconducting quantum interference device magnetic measurements show a ferromagnetic to paramagnetic transition of TC ˜ 370 – 380 K. We calculated a magnetic moment per atom of μ(Fe0.1Sc0.9N) = 0.037 Bohr magneton/ Mn-atom. Based on the carrier concentration measurements (nS(Fe0.1Sc0.9N) = 2.086 × 1019 /cm3), we find that iron behaves as an acceptor. Comparisons are made with similar MnScN (001)/ScN(001)/MgO(001) system.

Molecular Beam Epitaxy of II/VI Compounds for Blue/Green Laser Diodes

1994 ◽  
Vol 340 ◽  
Author(s):  
J.M. Gaines
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Laser Diodes ◽  
High Energy ◽  
Green Laser ◽  
Mbe Growth ◽  
Lattice Matching ◽  
Migration Enhanced Epitaxy ◽  
Sticking Coefficients

ABSTRACTThe growth of I1/VI epitaxial layers by molecular beam epitaxy (MBE) for blue/green lasers is described. To elucidate the issues in the growth of II/VI materials, the differences between II/V and II/VI MBE growth are addressed, including factors such as: substrates, molecular beam sources, lattice matching, sticking coefficients, and surface diffusion. Results of reflection high-energy diffraction (RHEED) oscillation measurements are presented. RHEED oscillations have proven to be a valuable in-situ tool for controlling certain aspects of 1I/VI MBE growth, such as ZnSySe1-y composition, Zn1-xMgxSe composition, and the growth rate of ZnSe during migration-enhanced epitaxy.

Molecular Beam Epitaxy From Research to Manufacturing

MRS Bulletin ◽  
1995 ◽  
Vol 20 (4) ◽  
pp. 21-28 ◽  
Author(s):  
A.Y. Cho
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Grazing Angle ◽  
High Energy ◽  
Vacuum System ◽  
Semiconducting Materials ◽  
Fluorescent Screen ◽  
P Type ◽  
Atom Layer

Tonight I will talk about molecular beam epitaxy (MBE) from research to manufacturing. First I will discuss the introduction of MBE in the early 1970s and the exciting achievements made with it. I will conclude with some new directions for MBE.First let us review this technology. Through MBE, materials like semiconducting materials, metals, and insulating materials are grown, atom layer by atom layer. Figure 1 shows a stainless steel MBE chamber, pumped to a pressure of approximately 10−10 torr, with liquid-nitrogen-cooled shrouds to further condense the water vapor in the vacuum system. To grow gallium arsenide (GaAs), we mount a substrate in the center where it continuously rotates to give us the uniformity we need, and it is heated to about 580° or 600°C. The effusion cells are filled with pure Ga, pure As, and doping elements such as silicon for n-type doping, and then germanium or beryllium for p-type doping. Important in this MBE system are the in situ monitoring techniques. The system contains a reflection high energy electron diffraction (RHEED) apparatus, producing an electron beam with a grazing angle to the substrate of about one degree. The diffracted electrons are projected on a fluorescent screen. Through the diffraction pattern, we can look at the surface as it is cleaned by desorption of the oxide before we deposit and grow semiconducting materials.

Argon Ion Bombardment During Molecular Beam Epitaxy of Ge (001)

1988 ◽  
Vol 128 ◽  
Author(s):  
Eric Chason ◽  
K. M. Horn ◽  
J. Y. Tsao ◽  
S. T. Picraux
Keyword(s):  
Molecular Beam Epitaxy ◽  
Surface Morphology ◽  
Molecular Beam ◽  
Ion Beam ◽  
High Energy ◽  
Low Energy ◽  
High Energy Electron ◽  
Argon Ion Bombardment ◽  
Argon Ion

ABSTRACTUsing in situ, real-time reflection high energy electron diffraction (RHEED), we have measured the evolution of Ge (001) surface morphology during simultaneous molecular beam epitaxy and Ar ion beam bombardment. Surprisingly, low-energy Ar ions during growth tend to smoothen the surface. Bombardment by the ion beam without growth roughens the surface, but the surface can be reversibly smoothened by restoring the growth beam. We have measured the effect of such “ion beam growth smoothening” above and below the critical temperature for intrinsic growth roughening. At all measured growth temperatures the surface initially smoothens, but below the critical roughening temperature the final surface morphology is rough whereas above this temperature the final morphology is smooth.

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