Summary Abstract: Reactive ion etching of vanadium dioxide thin films

1986 ◽  
Vol 4 (3) ◽  
pp. 440-442 ◽  
Author(s):  
H. Buhay ◽  
K. J. Kogler ◽  
B. L. Whitehead ◽  
R. C. Tiberio
Keyword(s):  
Thin Films ◽  
Vanadium Dioxide ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
Vanadium Dioxide Thin Films

Study on the Grain Size of Vanadium Dioxide Thin Films using Sol-gel Spin Coating Method

2018 ◽  
Author(s):  
Ibrahim Mohd Yazid ◽  
Muhammad Hazim Raselan ◽  
Shafinaz Sobihana Shariffudin ◽  
Puteri Sarah Mohamad Saad ◽  
Sukreen Hana ◽  
...  
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Vanadium Dioxide ◽  
Spin Coating ◽  
Sol Gel ◽  
Spin Coating Method ◽  
Coating Method ◽  
Vanadium Dioxide Thin Films

Electron-beam deposition of vanadium dioxide thin films

2012 ◽  
Vol 111 (3) ◽  
pp. 975-981 ◽  
Author(s):  
R. E. Marvel ◽  
K. Appavoo ◽  
B. K. Choi ◽  
J. Nag ◽  
R. F. Haglund
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Vanadium Dioxide ◽  
Electron Beam Deposition ◽  
Vanadium Dioxide Thin Films ◽  
Beam Deposition

Reactive Ion Etching of Al-1%Cu alloy thin films

2009 ◽  
Author(s):  
Jun Gou ◽  
Zhi-ming Wu ◽  
Hui-ling Tai ◽  
Kai Yuan
Keyword(s):  
Thin Films ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
Cu Alloy

scholarly journals Mg/W-codoped vanadium dioxide thin films with enhanced visible transmittance and low phase transition temperature

2015 ◽  
Vol 3 (26) ◽  
pp. 6771-6777 ◽  
Author(s):  
Ning Wang ◽  
Shiyu Liu ◽  
X. T. Zeng ◽  
Shlomo Magdassi ◽  
Yi Long
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Transition Temperature ◽  
Charge Carrier ◽  
Band Gap ◽  
Phase Transition Temperature ◽  
Vanadium Dioxide ◽  
Visible Transmittance ◽  
Vanadium Dioxide Thin Films

Mg2+ and W6+ cations were first codoped into the VO2 lattice, resulting in a widened photon band gap and h+/e− charge carrier accumulation. These effects enhanced the thermochromic performance with a high visible transmission (∼80%) and a low phase transition temperature (∼30 °C).

Reactive Ion Etching Damage to Ferroelectric Thin Films Capacitors

1994 ◽  
Vol 361 ◽  
Author(s):  
W. Pan ◽  
C.L. Thio ◽  
S.B. Desu ◽  
Cheewon Chung
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Leakage Current ◽  
Reactive Ion Etching ◽  
Ferroelectric Thin Films ◽  
Electric Properties ◽  
Etching Time ◽  
Ion Etching ◽  
Before And After ◽  
Ferroelectric Capacitors

ABSTRACTReactive ion etching damage to sputtered Pt/PZT/Pt ferroelectric capacitors was studied using Ar and CHCIFCF3 etch gases. Electrical properties, hysteresis, fatigue, and leakage current of PZT capacitors, before and after etching, were compared to examine the etching damage. It is found that the damage effects depend on etching time and are mainly due to the physical bombardment effect. The PZT capacitors etched with CHCIFCF3 plasma showed less damage than those etched in Ar plasma. The electric properties of etched Pt/PZT/Pt capacitors are recovered by annealing at 400 °C for 30min.

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