Evaluation of LSCO Electrodes for Sensor Protection Devices

2000 ◽  
Vol 623 ◽  
Author(s):  
R. W. Schwartz ◽  
M. T. Sebastian ◽  
M. V. Raymond
Keyword(s):  
Absorption Coefficient ◽  
Transparent Electrode ◽  
Protection Device ◽  
Post Deposition Annealing ◽  
Lanthanum Strontium Cobalt Oxide ◽  
Annealing Step ◽  
Protection Devices ◽  
Sputter Deposited ◽  
Deposited Films ◽  
Post Deposition

AbstractWe have evaluated lanthanum strontium cobalt oxide (La0.5OSr0.50COOx; LSCO 50/50) as a candidate “transparent” electrode for use in an electrostatic shutter-based infrared sensor protection device. The device requires that the electrode be transparent (80% transmission) and have moderate sheet resistance (300 – 500 Δ/sq.). To meet these needs, the effects of post-deposition annealing on the resistivity and optical absorption characteristics of sputter deposited LSCO thin films were studied. The as-deposited films were characterized by an absorption coefficient of ∼ 12,500 cm1−1 and resistivities of ∼ 0.08 to 0.5 Δ-cm. With annealing at 800°C, the resistivity decreased to 350 νΔ-cm, while the absorption coefficient increased to ∼ 155,000 cm1−1. By using a post-deposition annealing step at 800°C and controlling film thickness, it appears that a standard LSCO 50/50 material may possess the requisite conductivity and optical transmission properties for this sensor protection device.

Colossal Magnetoresistance in Thick La0.7Ca0.3MnO3 Films

1995 ◽  
Vol 384 ◽  
Author(s):  
Randolph E. Treece ◽  
P. Dorsey ◽  
M. Rubinstein ◽  
J. M. Byers ◽  
J. S. Horwitz ◽  
...  
Keyword(s):  
Colossal Magnetoresistance ◽  
Single Phase ◽  
Laser Deposition ◽  
Orthorhombic Structure ◽  
X Ray Diffraction ◽  
Post Deposition Annealing ◽  
X Ray ◽  
Mr Effect ◽  
Deposited Films ◽  
Post Deposition

ABSTRACTThick films (0.6 and 2.0 μm) of the colossal magnetoresistance (CMR) material, La0.7Ca0.3MnO3 (LCMO), have been grown by pulsed laser deposition (PLD). The films were grown from single-phase LCMO targets in 100 mTorr 02 pressures and the material deposited on (100) LaAlO3 substrates at deposition temperatures of 800°C. The deposited films were characterized by X-ray diffraction (XRD), magnetic field-dependent resistivity, and Rutherford backscattering spectroscopy (RBS). The LCMO films were shown by XRD to adopt an orthorhombic structure. Brief post-deposition annealing led to ~50,000% and ~12,000% MR effect in the 0.6 μm and 2.0 μm films, respectively.

Investigation on the Thermal and Electrical Properties of Ti-Si-O Film Formed by the Composite Sputtering Deposition

2001 ◽  
Vol 670 ◽  
Author(s):  
Akira Nishiyama ◽  
Akio Kaneko ◽  
Masato Koyama ◽  
Yoshiki Kamata ◽  
Ikuo Fujiwara ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Phase Separation ◽  
Nanocrystalline Film ◽  
Post Deposition Annealing ◽  
Current Increase ◽  
Sputtering Deposition ◽  
Thermal And Electrical Properties ◽  
Sputter Deposited ◽  
Post Deposition

ABSTRACTTi-Si-O films were sputter deposited from TiO2+SiO2 composite targets with various SiO2 content. The phase separation occurred for every SiO2 content used in this experiment (from 14% to 75%) and it has been revealed that nanocrystalline (TiO2)1-x(SiO2)x films in which anatase TiO2 forms tiny grains were obtained when x in the film is larger than 0.26. The tiny grain was effective for suppressing the thermal grooving phenomenon of the thin films by the post deposition annealing which leads to the leakage current increase. The dielectric constant of the nanocrystalline film was varied with the SiO2 content from the value of the bulk anatase to SiO2.

Experimental Study of Sputter Deposited Contacts to Gallium Nitride

1997 ◽  
Vol 482 ◽  
Author(s):  
E. C. Piquette ◽  
Z. Z. Bandić ◽  
T. C. McGill
Keyword(s):  
Experimental Study ◽  
Barrier Properties ◽  
Metal Contacts ◽  
Post Deposition Annealing ◽  
Plasma Sputtering ◽  
Transmission Line Method ◽  
Current Voltage ◽  
Sputter Deposited ◽  
Surface Sputtering ◽  
Post Deposition

AbstractA variety of metal contacts to n-GaN is investigated, including Al, Au, Ce, Ti, Cr, Mg, Sb, W, and Mo, which were deposited using DC magnetron plasma sputtering onto MBE grown GaN. The contacts were characterized by current-voltage analysis and contact resistances were measured by the circular geometry transmission line method. The effects on contact resistance and Schottky barrier properties by surface sputtering treatments, GaN doping, and post-deposition annealing are reported.

scholarly journals Grain Boundary Migration and the Texture of Films

1991 ◽  
Vol 13 (2-3) ◽  
pp. 91-99 ◽  
Author(s):  
Idajean M. Fisher ◽  
David A. Smith
Keyword(s):  
Grain Boundary ◽  
Substrate Temperature ◽  
Boundary Migration ◽  
Fiber Texture ◽  
Grain Boundary Migration ◽  
Post Deposition Annealing ◽  
Interfacial Energies ◽  
Amorphous Substrates ◽  
Deposited Films ◽  
Post Deposition

Extensive studies of the microstructure of deposited films establish that grain boundary migration is a ubiquitous process in the development of microstructure and frequently the key process in the formation of a preferred orientation. This conclusion is supported by the interpretation of observations of the structure and orientation of films as a function of substrate temperature and post deposition annealing. Epitaxial deposits can result from oriented nucleation or selective growth processes. On amorphous substrates the anisotropy of the interfacial energies of the deposit results in a fiber texture at temperatures when grain growth occurs either during deposition or in a post-deposition anneal.

EFFECTS OF HEAT TREATMENTS ON ALUMINUM OXIDE COATINGS DEPOSITED ON Ni-BASED ALLOY

2015 ◽  
Vol 22 (01) ◽  
pp. 1550016 ◽  
Author(s):  
XIUFENG TANG ◽  
FA LUO ◽  
CHUNHAN HSEIH ◽  
XIANGYU LI
Keyword(s):  
Heat Treatments ◽  
Reactive Magnetron ◽  
Oxide Coatings ◽  
High Temperature Application ◽  
Post Deposition Annealing ◽  
Film Property ◽  
Dc Reactive Magnetron Sputtering ◽  
Temperature Application ◽  
Deposited Films ◽  
Post Deposition

Al x O y films coated on both Ni -based superalloy and silica substrates were prepared by DC reactive magnetron sputtering. Post-deposition annealing was carried out on those as-deposited films. And then 1 h heat treatments were done on the annealed films at constant temperatures ranging from 600–900°C to simulate the high-temperature application. The Al x O y film heated at 600°C exhibited good film property. Bonding strength between the 600°C-heated Al x O y film and the Ni -based substrate was about 11.6 MPa.

Pressure Assisted Crystallization of MnAl Thin Films

2001 ◽  
Vol 695 ◽  
Author(s):  
Gregory A. Fischer ◽  
M. Lea Rudee ◽  
Vitali F. Nesterenko ◽  
Sastry Indrakanti
Keyword(s):  
Magnetic Properties ◽  
Vacuum Annealing ◽  
Degree Of Crystallinity ◽  
Post Deposition Annealing ◽  
Dc Sputtering ◽  
The Degree Of Crystallinity ◽  
Deposited Films ◽  
Equal Thickness ◽  
Post Deposition ◽  
Better Than

ABSTRACTThe effect of hot isostatic pressure processing (HIP) on MnAl films has been compared to vacuum annealing for the purpose of obtaining substantial amounts of tau phase MnAl in films under 200 nm. Films were deposited by dc sputtering from both MnAlNiC an MnAl targets. As-deposited films were nearly amorphous. Post deposition annealing in vacuum produced only small amounts of the ferromagnetic tau-phase in films thinner than 200 nm.In all instances, regardless of substrate and sputtering target, the use of HIP in place of vacuum annealing increased the degree of crystallinity of the samples when compared to those annealed in vacuum. For the 100 nm samples deposited from the MnAlNiC target, these changes in crystallinity were accompanied by changes in the M-H loops of the samples. MnAlNiC HIP samples had improved magnetic properties compared to those of equal thickness annealed in vacuum. The 100 nm HIP sample sputtered from the MnAl target also showed an increase in moment, though the changes were not as dramatic as those seen in the samples sputtered from the MnAlNiC target.The 50 nm films from both targets also showed a change in crystallinity when compared to vacuum annealed samples. These films, unlike the 100 nm films, had ferromagnetic properties that were no better than those of the vacuum annealed samples. This suggests that while the 2 kbar of pressure used in this study assists in the formation of tau-phase in 100 nm films, the appropriate pressure for forming tau-phase in 50 nm films is yet to be determined.

Post-deposition annealing of thin RF magnetron sputter-deposited VO2 films above the melting point

2018 ◽  
Vol 763 ◽  
pp. 558-569 ◽  
Author(s):  
Sergey S. Maklakov ◽  
Victor I. Polozov ◽  
Sergey A. Maklakov ◽  
Alexey D. Mishin ◽  
Ilya A. Ryzhikov ◽  
...  
Keyword(s):  
Melting Point ◽  
Post Deposition Annealing ◽  
Rf Magnetron Sputter ◽  
Magnetron Sputter ◽  
Sputter Deposited ◽  
Post Deposition

scholarly journals Annealing and N2 Plasma Treatment to Minimize Corrosion of SiC-Coated Glass-Ceramics

Materials ◽  
2020 ◽  
Vol 13 (10) ◽  
pp. 2375 ◽  
Author(s):  
Chaker Fares ◽  
Randy Elhassani ◽  
Jessica Partain ◽  
Shu-Min Hsu ◽  
Valentin Craciun ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Photoelectron Spectroscopy ◽  
Glass Ceramics ◽  
Chemical Vapor ◽  
Chemical Durability ◽  
Post Deposition Annealing ◽  
Buffer Solution ◽  
Annealing Step ◽  
Post Deposition ◽  
N2 Plasma

To improve the chemical durability of SiC-based coatings on glass-ceramics, the effects of annealing and N2 plasma treatment were investigated. Fluorapatite glass-ceramic disks were coated with SiC via plasma-enhanced chemical vapor deposition (PECVD), treated with N2 plasma followed by an annealing step, characterized, and then immersed in a pH 10 buffer solution for 30 days to study coating delamination. Post-deposition annealing was found to densify the deposited SiC and lessen SiC delamination during the pH 10 immersion. When the SiC was treated with a N2 plasma for 10 min, the bulk properties of the SiC coating were not affected but surface pores were sealed, slightly improving the SiC’s chemical durability. By combining N2 plasma-treatment with a post-deposition annealing step, film delamination was reduced from 94% to 2.9% after immersion in a pH 10 solution for 30 days. X-ray Photoelectron spectroscopy (XPS) detected a higher concentration of oxygen on the surface of the plasma treated films, indicating a thin SiO2 layer was formed and could have assisted in pore sealing. In conclusion, post-deposition annealing and N2 plasma treatment where shown to significantly improve the chemical durability of PECVD deposited SiC films used as a coating for glass-ceramics.

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