Experimental Study of Sputter Deposited Contacts to Gallium Nitride

1997 ◽  
Vol 482 ◽  
Author(s):  
E. C. Piquette ◽  
Z. Z. Bandić ◽  
T. C. McGill
Keyword(s):  
Experimental Study ◽  
Barrier Properties ◽  
Metal Contacts ◽  
Post Deposition Annealing ◽  
Plasma Sputtering ◽  
Transmission Line Method ◽  
Current Voltage ◽  
Sputter Deposited ◽  
Surface Sputtering ◽  
Post Deposition

AbstractA variety of metal contacts to n-GaN is investigated, including Al, Au, Ce, Ti, Cr, Mg, Sb, W, and Mo, which were deposited using DC magnetron plasma sputtering onto MBE grown GaN. The contacts were characterized by current-voltage analysis and contact resistances were measured by the circular geometry transmission line method. The effects on contact resistance and Schottky barrier properties by surface sputtering treatments, GaN doping, and post-deposition annealing are reported.

Investigation on the Thermal and Electrical Properties of Ti-Si-O Film Formed by the Composite Sputtering Deposition

2001 ◽  
Vol 670 ◽  
Author(s):  
Akira Nishiyama ◽  
Akio Kaneko ◽  
Masato Koyama ◽  
Yoshiki Kamata ◽  
Ikuo Fujiwara ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Phase Separation ◽  
Nanocrystalline Film ◽  
Post Deposition Annealing ◽  
Current Increase ◽  
Sputtering Deposition ◽  
Thermal And Electrical Properties ◽  
Sputter Deposited ◽  
Post Deposition

ABSTRACTTi-Si-O films were sputter deposited from TiO2+SiO2 composite targets with various SiO2 content. The phase separation occurred for every SiO2 content used in this experiment (from 14% to 75%) and it has been revealed that nanocrystalline (TiO2)1-x(SiO2)x films in which anatase TiO2 forms tiny grains were obtained when x in the film is larger than 0.26. The tiny grain was effective for suppressing the thermal grooving phenomenon of the thin films by the post deposition annealing which leads to the leakage current increase. The dielectric constant of the nanocrystalline film was varied with the SiO2 content from the value of the bulk anatase to SiO2.

Conduction Mechanisms at SiO2/4H-SiC Interfaces in MOS-Based Devices Subjected to Post Deposition Annealing in N2O

2016 ◽  
Vol 858 ◽  
pp. 705-708
Author(s):  
Patrick Fiorenza ◽  
Filippo Giannazzo ◽  
Alessia Frazzetto ◽  
Alfio Guarnera ◽  
Mario Saggio ◽  
...  
Keyword(s):  
Gate Oxide ◽  
Temperature Dependent ◽  
Post Deposition Annealing ◽  
Mos Capacitors ◽  
Gate Current ◽  
Conduction Mechanisms ◽  
Current Voltage ◽  
Hole Conduction ◽  
Current Conduction ◽  
Post Deposition

This paper reports on the conduction mechanisms through the gate oxide and trapping effects at SiO2/4H-SiC interfaces in MOS-based devices subjected to post deposition annealing in N2O. The phenomena were studied by temperature dependent current–voltage measurements. The analysis of both n and p-MOS capacitors and of n-channel MOSFETs operating in the “gate-controlled-diode” configuration revealed an anomalous hole conduction behaviour through the SiO2/4H-SiC interface, with the onset of current conduction moving towards more negative values during subsequent voltage sweeps. The observed gate current instabilities upon subsequent voltage sweeps were deeply investigated by temperature dependent cyclic gate current measurements. The results were explained by the charge-discharge mechanism of hole traps in the oxide.

Metal Contacts to Boron-Doped Diamond

2009 ◽  
Vol 615-617 ◽  
pp. 995-998
Author(s):  
Michal Lodzinski ◽  
Owen J. Guy ◽  
A. Castaing ◽  
S. Batcup ◽  
S.P. Wilks ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Electrical Performance ◽  
Metal Contacts ◽  
Boron Doped Diamond ◽  
Boron Doped ◽  
Current Voltage ◽  
Specific Contact ◽  
Boron Implantation ◽  
Post Deposition

This paper describes the fabrication of Ni and Ti contacts to single crystal, boron-doped diamond. The electrical performance of metal-diamond contacts has been investigated using current-voltage I(V) characterization of circular transmission line model (CTLM) test structures. X-ray photoelectron spectroscopy (XPS) analysis of Ti/diamond contacts has been performed and is correlated with CTLM results. Post deposition annealing of metal-diamond contacts has a dramatic influence on contact resistivity, with lower resistances observed after annealing at 900°C. Specific contact resistances as low as 9 x 10-5 Ω.cm2 have been obtained. The effect of doping (via epitaxial growth and boron implantation) on metal-diamond contacts is also reported.

Post-deposition annealing of thin RF magnetron sputter-deposited VO2 films above the melting point

2018 ◽  
Vol 763 ◽  
pp. 558-569 ◽  
Author(s):  
Sergey S. Maklakov ◽  
Victor I. Polozov ◽  
Sergey A. Maklakov ◽  
Alexey D. Mishin ◽  
Ilya A. Ryzhikov ◽  
...  
Keyword(s):  
Melting Point ◽  
Post Deposition Annealing ◽  
Rf Magnetron Sputter ◽  
Magnetron Sputter ◽  
Sputter Deposited ◽  
Post Deposition

Evaluation of LSCO Electrodes for Sensor Protection Devices

2000 ◽  
Vol 623 ◽  
Author(s):  
R. W. Schwartz ◽  
M. T. Sebastian ◽  
M. V. Raymond
Keyword(s):  
Absorption Coefficient ◽  
Transparent Electrode ◽  
Protection Device ◽  
Post Deposition Annealing ◽  
Lanthanum Strontium Cobalt Oxide ◽  
Annealing Step ◽  
Protection Devices ◽  
Sputter Deposited ◽  
Deposited Films ◽  
Post Deposition

AbstractWe have evaluated lanthanum strontium cobalt oxide (La0.5OSr0.50COOx; LSCO 50/50) as a candidate “transparent” electrode for use in an electrostatic shutter-based infrared sensor protection device. The device requires that the electrode be transparent (80% transmission) and have moderate sheet resistance (300 – 500 Δ/sq.). To meet these needs, the effects of post-deposition annealing on the resistivity and optical absorption characteristics of sputter deposited LSCO thin films were studied. The as-deposited films were characterized by an absorption coefficient of ∼ 12,500 cm1−1 and resistivities of ∼ 0.08 to 0.5 Δ-cm. With annealing at 800°C, the resistivity decreased to 350 νΔ-cm, while the absorption coefficient increased to ∼ 155,000 cm1−1. By using a post-deposition annealing step at 800°C and controlling film thickness, it appears that a standard LSCO 50/50 material may possess the requisite conductivity and optical transmission properties for this sensor protection device.

scholarly journals Impact of Surface Treatments and Post-Deposition Annealing Upon Interfacial Property of ALD-Al₂O₃ on a-Plane GaN

2020 ◽  
Vol 8 ◽  
pp. 970-975 ◽  
Author(s):  
Yanni Zhang ◽  
Jincheng Zhang ◽  
Zhuangzhuang Hu ◽  
Zhaoqing Feng ◽  
Hepeng Zhang ◽  
...  
Keyword(s):  
Surface Treatments ◽  
Interfacial Property ◽  
Post Deposition Annealing ◽  
Post Deposition

scholarly journals Control of Structural and Magnetic Properties of Polycrystalline Co2FeGe Films via Deposition and Annealing Temperatures

Nanomaterials ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 1229
Author(s):  
Andrii Vovk ◽  
Sergey A. Bunyaev ◽  
Pavel Štrichovanec ◽  
Nikolay R. Vovk ◽  
Bogdan Postolnyi ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Post Deposition Annealing ◽  
Structure Variation ◽  
Annealing Temperatures ◽  
Damping Parameter ◽  
Soft Ferromagnetic ◽  
Thin Polycrystalline ◽  
Post Deposition

Thin polycrystalline Co2FeGe films with composition close to stoichiometry have been fabricated using magnetron co-sputtering technique. Effects of substrate temperature (TS) and post-deposition annealing (Ta) on structure, static and dynamic magnetic properties were systematically studied. It is shown that elevated TS (Ta) promote formation of ordered L21 crystal structure. Variation of TS (Ta) allow modification of magnetic properties in a broad range. Saturation magnetization ~920 emu/cm3 and low magnetization damping parameter α ~ 0.004 were achieved for TS = 573 K. This in combination with soft ferromagnetic properties (coercivity below 6 Oe) makes the films attractive candidates for spin-transfer torque and magnonic devices.

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