Preparation of PZT-YBCO Heterostructure on YSZ Coated Si by KrF Laser Ablation

2000 ◽  
Vol 623 ◽  
Author(s):  
Kenji Ebihara ◽  
Fumiaki Mitsugi ◽  
Tomoaki Ikegam ◽  
Jagdish Narayan
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Coercive Field ◽  
Remanent Polarization ◽  
Perovskite Oxide ◽  
Interface Problems ◽  
Colossal Magnetoresistive ◽  
Excimer Laser Ablation ◽  
Krf Excimer Laser ◽  
Laser Ablation Technique

AbstractKrF excimer laser ablation technique is used to fabricate the ferroelectric Pb(ZrxTi1−xO3)(PZT) capacitor on Si(100) substrate. The superconducting YBa2Cu3O71−x(YBCO) and the colossal magnetoresistive La0.8sr0.2MnO3(LSMO) thin films are used as bottom electrodes for the ferroelectric capacitive structure. The YBCO and LSMO films were studied to understand the interface problems with perovskite oxide films. The fabricated PZT/YBCO/YSZ/Si capacitor shows the ferrolectric properties of the remanent polarization of 20pC/cm2 and the coercive field of 40 kV/cm. Post-thermal annealing improves the ferroelctric properties and the results are comparable with that of the PZT/YBCO/MgO(100) structure. The leakage current of the PZT capacitor is discussed.

Preparation of PZT/YBCO/YAIO Heterostructure Thin Films by KrF Excimer Laser Ablation

1998 ◽  
Vol 526 ◽  
Author(s):  
Kenji Ebihara ◽  
Hiromnitsu Kurogi ◽  
Yukihiko Yamagata ◽  
Tomoaki Ikegami ◽  
Alexander M. Grishin
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Excimer Laser ◽  
Ferroelectric Properties ◽  
Perovskite Oxide ◽  
Excimer Laser Ablation ◽  
Fatigue Characteristics ◽  
Krf Excimer Laser ◽  
Operation Frequency ◽  
Deposition Conditions

AbstractThe perovskite oxide YBa2Cu3O7-x (YBCO) and Pb(ZrxTi1-x)O3 (PZT) thin films have been deposited for superconducting-ferroelectric devices. KrF excimer laser ablation technique was used at the deposition conditions of 200-600mTorr O2, 2-3J/cm2 and 5-10 Hz operation frequency. Heterostructures of PZT-YBCO-YAlO3:Nd show the zero resistivity critical temperature of 82K and excellent ferroelectric properties of remnant polarization 32 μC/cm2, coercive force of 80kV/cm and dielectric constant 800. Cycling fatigue characteristics and leakage current are also discussed.

Preparation of PbZrxTi1−xO3 Thin Films by KrF Excimer Laser Ablation Technique

1996 ◽  
Vol 433 ◽  
Author(s):  
Hiromitsu Kurogi ◽  
Yukihiko Yamagata ◽  
Tomoaki Ikegami ◽  
Kenji Ebihara ◽  
Bok Yin Tong
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Excimer Laser ◽  
Oxygen Pressure ◽  
Ferroelectric Properties ◽  
Pzt Thin Films ◽  
Excimer Laser Ablation ◽  
Pzt Films ◽  
Krf Excimer Laser ◽  
Laser Ablation Technique

AbstractPb(ZrxTi1−x)O3(PZT) thin films have excellent ferroelectric, optical, piezoelectric and pyroelectric properties. We prepared PZT thin films using the excimer laser ablation technique. A pulsed KrF excimer laser was used to ablate PZT bulk targets. We have studied optimum preparation conditions such as an oxygen pressure, a laser energy fluence and a substrate temperature.In this paper, we investigated the composition, crystallization and ferroelectric properties of the PZT films prepared under various deposition conditions.The X-ray diffraction (XRD) patterns showed that the PZT films prepared on MgO(100) substrates at 600°C and with a laser fluence of 2J/cm2 had a perovskite - pyrochlore mixed structure. The condition of 100 mTorr oxygen pressure provided high quality perovskite films. It is found that the stoichiometric composition of the deposited films is obtained in ambient oxygen of 100˜400 mTorr. The ferroelectric properties of the Pt/PZT/Pt/MgO structure were studied. The capacitance-voltage characteristics and the corresponding hysteresis loop of the dielectric-electric field curve were discussed.We also studied optical emission of the PZT plasma plume to understand quantitative relation between the PZT film quality and the ablation plume plasma. We identified spectral lines originated in Pb, Pb+, Zr, Zr+, Ti, Ti+, PbO and TiO. These spectral intensities have remarkable dependence on the ambient O2 pressure.

Si1−xGex thin films deposited by the pulsed excimer laser ablation technique

1995 ◽  
Vol 86 (1-4) ◽  
pp. 175-179 ◽  
Author(s):  
F. Antoni ◽  
E. Fogarassy ◽  
C. Fuchs ◽  
B. Prévot ◽  
J.P. Stoquert
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Excimer Laser ◽  
Excimer Laser Ablation ◽  
Ablation Technique ◽  
Laser Ablation Technique

Epitaxial growth of LiNbO3 thin films by excimer laser ablation method and their surface acoustic wave properties

1992 ◽  
Vol 285 ◽  
Author(s):  
Yoshihiko Shibata ◽  
Kiyoshi Kaya ◽  
Kageyasu Akashi ◽  
Masaki Kanai ◽  
Tomoji Kawal ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Acoustic Wave ◽  
Surface Acoustic Wave ◽  
High Frequency ◽  
Excimer Laser Ablation ◽  
Sapphire Substrates ◽  
Laser Ablation Method ◽  
Wave Properties ◽  
Laser Ablation Technique

ABSTRACTWe have formed epitaxial LiNbO3 thin films on sapphire substrates (001),(110) and (012) using an excmer-laser ablation technique. We have fabricated surface acoustic wave (SAW) filters on the films and evaluated SAW properties. It is demonstrated that the LINbO3 thin films on the sapphire substrates are candidates for a high frequency SAW filter because of their high velocities of propagation (5300–5600m/s).

Deposition of crystal polythiophene thin films by KrF excimer laser ablation

2000 ◽  
Vol 15 (2) ◽  
pp. 536-540 ◽  
Author(s):  
Y. F. Lu ◽  
Z. M. Ren ◽  
Z. H. Mai ◽  
T. C. Chong ◽  
S. C. Ng ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Electronic Properties ◽  
Excimer Laser ◽  
Uniform Size ◽  
Excimer Laser Ablation ◽  
Atomic Force ◽  
Structural And Electronic Properties ◽  
Raman And Infrared Spectroscopy ◽  
Krf Excimer Laser

Thin films of polythiophene, a kind of polyheterocyclic compound with hydrogen function groups, were deposited by KrF excimer laser ablation of a compressed solid target in a vacuum chamber. The laser pulse fluence was approximately selected at 2 J/cm2 with a pulse duration of 25 ns. The structural, topographic, and electronic properties of the deposited thin films were analyzed by atomic force microscope, x-ray diffraction, and Raman and infrared spectroscopy measurements. Deposited thin films were observed to have good crystal properties and to be composed of crystalline cubes with a uniform size of 0.1 μm. The electronic structure of the deposited thin films should be different from the target materials, resulting from the laser irradiation effects. The influence of the deposition temperature on the structural and electronic properties of the deposited thin films was studied.

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