Epitaxial growth of LiNbO3 thin films by excimer laser ablation method and their surface acoustic wave properties

1992 ◽  
Vol 285 ◽  
Author(s):  
Yoshihiko Shibata ◽  
Kiyoshi Kaya ◽  
Kageyasu Akashi ◽  
Masaki Kanai ◽  
Tomoji Kawal ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Acoustic Wave ◽  
Surface Acoustic Wave ◽  
High Frequency ◽  
Excimer Laser Ablation ◽  
Sapphire Substrates ◽  
Laser Ablation Method ◽  
Wave Properties ◽  
Laser Ablation Technique

ABSTRACTWe have formed epitaxial LiNbO3 thin films on sapphire substrates (001),(110) and (012) using an excmer-laser ablation technique. We have fabricated surface acoustic wave (SAW) filters on the films and evaluated SAW properties. It is demonstrated that the LINbO3 thin films on the sapphire substrates are candidates for a high frequency SAW filter because of their high velocities of propagation (5300–5600m/s).

Epitaxial Growth of LiNbO3Films on Sapphire Substrates by Excimer Laser Ablation Method and Their Surface Acoustic Wave Properties

1993 ◽  
Vol 32 (Part 2, No. 5B) ◽  
pp. L745-L747 ◽  
Author(s):  
Yoshihiko Shibata ◽  
Kiyoshi Kaya ◽  
Kageyasu Akashi ◽  
Masaki Kanai ◽  
Tomoji Kawai ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Acoustic Wave ◽  
Epitaxial Growth ◽  
Surface Acoustic Wave ◽  
Excimer Laser ◽  
Excimer Laser Ablation ◽  
Sapphire Substrates ◽  
Laser Ablation Method ◽  
Wave Properties

Epitaxial growth of LiNbO3thin films by excimer laser ablation method and their surface acoustic wave properties

1992 ◽  
Vol 61 (8) ◽  
pp. 1000-1002 ◽  
Author(s):  
Yoshihiko Shibata ◽  
Kiyoshi Kaya ◽  
Kageyasu Akashi ◽  
Masaki Kanai ◽  
Tomoji Kawai ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Acoustic Wave ◽  
Epitaxial Growth ◽  
Surface Acoustic Wave ◽  
Excimer Laser ◽  
Excimer Laser Ablation ◽  
Laser Ablation Method ◽  
Wave Properties

Experimental Surface Acoustic Wave Properties of AlN Thin Films on Sapphire Substrates

1997 ◽  
Vol 36 (Part 1, No. 1A) ◽  
pp. 307-312 ◽  
Author(s):  
Kiyoshi Kaya ◽  
Hiroshi Takahashi ◽  
Yoshihiko Shibata ◽  
Yasuhito Kanno ◽  
Toshio Hirai
Keyword(s):  
Thin Films ◽  
Acoustic Wave ◽  
Surface Acoustic Wave ◽  
Sapphire Substrates ◽  
Experimental Surface ◽  
Wave Properties

Synthesis of AlN Thin Films on Sapphire Substrates by Chemical Vapor Deposition ofAlCl3–NH3System and Surface Acoustic Wave Properties

1996 ◽  
Vol 35 (Part 1, No. 5A) ◽  
pp. 2782-2787 ◽  
Author(s):  
Kiyoshi Kaya ◽  
Yasuhito Kanno ◽  
Hiroshi Takahashi ◽  
Yoshihiko Shibata ◽  
Toshio Hirai
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Acoustic Wave ◽  
Surface Acoustic Wave ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Sapphire Substrates ◽  
Wave Properties

Preparation of PbZrxTi1−xO3 Thin Films by KrF Excimer Laser Ablation Technique

1996 ◽  
Vol 433 ◽  
Author(s):  
Hiromitsu Kurogi ◽  
Yukihiko Yamagata ◽  
Tomoaki Ikegami ◽  
Kenji Ebihara ◽  
Bok Yin Tong
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Excimer Laser ◽  
Oxygen Pressure ◽  
Ferroelectric Properties ◽  
Pzt Thin Films ◽  
Excimer Laser Ablation ◽  
Pzt Films ◽  
Krf Excimer Laser ◽  
Laser Ablation Technique

AbstractPb(ZrxTi1−x)O3(PZT) thin films have excellent ferroelectric, optical, piezoelectric and pyroelectric properties. We prepared PZT thin films using the excimer laser ablation technique. A pulsed KrF excimer laser was used to ablate PZT bulk targets. We have studied optimum preparation conditions such as an oxygen pressure, a laser energy fluence and a substrate temperature.In this paper, we investigated the composition, crystallization and ferroelectric properties of the PZT films prepared under various deposition conditions.The X-ray diffraction (XRD) patterns showed that the PZT films prepared on MgO(100) substrates at 600°C and with a laser fluence of 2J/cm2 had a perovskite - pyrochlore mixed structure. The condition of 100 mTorr oxygen pressure provided high quality perovskite films. It is found that the stoichiometric composition of the deposited films is obtained in ambient oxygen of 100˜400 mTorr. The ferroelectric properties of the Pt/PZT/Pt/MgO structure were studied. The capacitance-voltage characteristics and the corresponding hysteresis loop of the dielectric-electric field curve were discussed.We also studied optical emission of the PZT plasma plume to understand quantitative relation between the PZT film quality and the ablation plume plasma. We identified spectral lines originated in Pb, Pb+, Zr, Zr+, Ti, Ti+, PbO and TiO. These spectral intensities have remarkable dependence on the ambient O2 pressure.

Preparation of Ti:sapphire thin films on sapphire substrates by XeCl excimer laser ablation

1996 ◽  
Author(s):  
Peter A. Atanasov ◽  
Rumen I. Tomov ◽  
Anna O. Dikovska ◽  
Zdravka I. Aneva ◽  
Vasilka Tsaneva ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Excimer Laser ◽  
Excimer Laser Ablation ◽  
Sapphire Substrates ◽  
Xecl Excimer Laser

Si1−xGex thin films deposited by the pulsed excimer laser ablation technique

1995 ◽  
Vol 86 (1-4) ◽  
pp. 175-179 ◽  
Author(s):  
F. Antoni ◽  
E. Fogarassy ◽  
C. Fuchs ◽  
B. Prévot ◽  
J.P. Stoquert
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Excimer Laser ◽  
Excimer Laser Ablation ◽  
Ablation Technique ◽  
Laser Ablation Technique
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