Hydrothermal Preparation of Ba(Ti,Zr)O3 Thin Films From Ti-Zr Metallic Alloys on Silicon Substrate

2000 ◽  
Vol 623 ◽  
Author(s):  
Chang-Tai Xia ◽  
V. M. Fuenzalida ◽  
R. A. Zarate
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Constant ◽  
Silicon Substrate ◽  
Metallic Alloys ◽  
Capacitance Measurement ◽  
Silicon Substrates ◽  
Alloy Thin Film ◽  
Hydrothermal Conditions ◽  
Hydrothermal Preparation

AbstractBa(Ti,Zr)O3 thin films were grown hydrothermally on silicon substrates coated with sputtered a Ti-34 at.%Zr metallic alloy thin film. To ensure the formation of Ba(Ti,Zr)O3 under the hydrothermal conditions at 150°C, the concentration of the Ba(OH)2 had to be greater than 0.25 M. Preliminary capacitance measurement revealed a dielectric constant of 200 in Ba(Ti,Zr)O3 films of approximately 320 nm. The formation mechanism is discussed.

scholarly journals Impact of process conditions on chemical solution deposited BNKT thin film electromechanical properties

2021 ◽  
Vol 3 (10) ◽  
Author(s):  
Kyle M. Grove ◽  
Austin Fox ◽  
David P. Cann ◽  
Song Won Ko ◽  
Peter Mardilovich ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Constant ◽  
Dielectric Loss ◽  
Pyrolysis Temperature ◽  
Piezoelectric Response ◽  
Excess Properties ◽  
Process Conditions ◽  
Chemical Solution ◽  
Ramp Rate

Abstract Phase pure perovskite (1-x)Bi1/2Na1/2TiO3 – xBi1/2K1/2TiO3 (BNKT) thin films were successfully prepared via an inverse mixing order chemical solution deposition method and the impact of process conditions on film properties were observed. Process conditions evaluated included crystallization temperature and time, ramp rate, pyrolysis temperature, and cation excess. Properties measured included crystal structure, dielectric constant, dielectric loss, piezoelectric response, and ferroelectric response. A few notable trends were observed. A subtle impact on piezoelectric response was observed in films prepared using different ramp rates: 100 C per second films (d33,f = 60 ± 5 pm/V at 1 kHz), 75 °C per second films (d33,f = 55 ± 5 pm/V) and 150 C per second films (d33,f = 50 ± 5 pm/V). Films prepared using a 75 °C per second ramp rate displayed slightly higher dielectric loss (tan δ = 0.09 at 1 kHz) than films prepared using a 100 °C per second ramp rate (tan δ = 0.07 at 1 kHz) or 150 °C per second ramp rate (tan δ = 0.05 at 1 kHz). Pyrolysis temperatures greater than 350 °C are necessary to burn off organics and maximize film dielectric constant. Dielectric constant increased from 450 ± 50 at 1 kHz to 600 ± 50 at 1 kHz by increasing pyrolysis temperature from 300 to 400 °C. Excess cation amounts (for compositional control) were also evaluated and it was found films with higher amounts of Na and K excess compared to bismuth excess displayed an increase in d33,f of about 10 pm/V compared to films prepared with equivalent Bi and Na and K excess amounts. Article highlights Impact of processing conditions on inverse mixing order chemical solution deposited bismuth based thin films. Dielectric, piezoelectric, and ferroelectric properties of thin film bismuth sodium titanate-bismuth potassium titanate thin films. Developing lead-free piezoelectric actuator materials.

scholarly journals High Strength and Deformation Mechanisms of Al0.3CoCrFeNi High-Entropy Alloy Thin Films Fabricated by Magnetron Sputtering

Entropy ◽  
2019 ◽  
Vol 21 (2) ◽  
pp. 146 ◽  
Author(s):  
Wei-Bing Liao ◽  
Hongti Zhang ◽  
Zhi-Yuan Liu ◽  
Pei-Feng Li ◽  
Jian-Jun Huang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
High Hardness ◽  
Deformation Mechanisms ◽  
High Entropy Alloy ◽  
Alloy Thin Film ◽  
Face Centered Cubic ◽  
High Entropy ◽  
Strength And Deformation

Recently, high-entropy alloy thin films (HEATFs) with nanocrystalline structures and high hardness were developed by magnetron sputtering technique and have exciting potential to make small structure devices and precision instruments with sizes ranging from nanometers to micrometers. However, the strength and deformation mechanisms are still unclear. In this work, nanocrystalline Al0.3CoCrFeNi HEATFs with a thickness of ~4 μm were prepared. The microstructures of the thin films were comprehensively characterized, and the mechanical properties were systematically studied. It was found that the thin film was smooth, with a roughness of less than 5 nm. The chemical composition of the high entropy alloy thin film was homogeneous with a main single face-centered cubic (FCC) structure. Furthermore, it was observed that the hardness and the yield strength of the high-entropy alloy thin film was about three times that of the bulk samples, and the plastic deformation was inhomogeneous. Our results could provide an in-depth understanding of the mechanics and deformation mechanism for future design of nanocrystalline HEATFs with desired properties.

Preparation of (La,Sr)MnO3 Thin Film by Chemical Solution Deposition

2013 ◽  
Vol 566 ◽  
pp. 187-190
Author(s):  
Keiichi Sasajima ◽  
Hiroshi Uchida
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Resistivity ◽  
Silicon Substrate ◽  
Chemical Solution Deposition ◽  
Buffer Layers ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Ferroelectric Capacitor ◽  
Lower Electrical Resistivity

Thin films of (La,Sr)MnO3 (LSMO) were fabricated by industrial-versatile chemical solution deposition (CSD) technique. Well [100]-oriented LSMO films were fabricated at 650-750 °C by use of buffer layers of LaNiO3 buffer layer on a silicon substrate. The product of lower electrical resistivity is promising as an electrode of fatigue-free ferroelectric capacitor.

Characterization of MgZnO Thin Film for 1 GHz MMIC Applications

2013 ◽  
Vol 832 ◽  
pp. 310-315
Author(s):  
R. Ahmad ◽  
M.S. Shamsudin ◽  
M. Salina ◽  
S.M. Sanip ◽  
M. Rusop ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Constant ◽  
Loss Tangent ◽  
Integrated Circuit ◽  
Annealing Temperature ◽  
Dielectric Material ◽  
Sol Gel ◽  
Size Reduction ◽  
High Frequencies

MgZnO thin films are proposed as a new dielectric material for 1 GHz monolithic microwave integrated circuit (MMIC) applications. The high permittivity of this material enables size reduction; furthermore this can be fabricated using a low cost processing method. In this work, MgZnO/Pt/Si thin films were synthesized using a sol-gel spin coating method. The samples were annealed at various temperatures with the effects on physical and electrical properties investigated at direct current (DC) and high frequencies. The physical properties of MgZnO thin film were analyzed using X-Ray diffraction, with the improvements shown in crystalline structure and grain size with increasing temperature up to 700 °C. DC resistivity of 77 Ωcm at higher annealing temperature obtained using a four point probe station. In order to prove the feasibility at high frequencies, a test structure consisting of a 50 Ω transmission line and capacitors with 50 × 50 μm electrode area were patterned on the films using electron beam lithography. The radio frequency (RF) properties were measured using aWiltron 37269Avector network analyzer andCascade Microtechon-wafer probes measured over a frequency range of 0.5 to 3 GHz. The dielectric constant, loss tangent and return loss, S11improve with the increment annealing temperature. The dielectric constant was found to be 18.8, with loss tangent of 0.02 at 1 GHz. These give a corresponding size reduction of ten times compared to conventional dielectrics, silicon nitride (Si3N4). These indicate that the material is suitable to be implemented as a new dielectric material for 1GHz MMIC applications.

Laser Assisted Molecular Beam Deposition of Thin Films for Gate Dielectrics Applications

2003 ◽  
Vol 768 ◽  
Author(s):  
Robert L. DeLeon ◽  
James F. Garvey ◽  
Gary S. Tompa ◽  
Richard Moore ◽  
Harry Efstathiadis
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Constant ◽  
Molecular Beam ◽  
High Dielectric Constant ◽  
Film Surface ◽  
Rutherford Back Scattering ◽  
Molecular Beam Deposition ◽  
High Dielectric ◽  
Beam Deposition

AbstractHigh dielectric constant (k), the thermal stability and the chemical stability with respect to reaction with silicon of hafnium oxide (HfO2), and zirconium oxide (ZrO2) places them among the leading candidates for an alternative gate dielectric material. High dielectric constant HfO2 and ZrO2 thin films have successfully been deposited on silicon substrates at a temperature of 27 °C by Laser Assisted Molecular Beam Deposition (LAMBD). The LAMBD process is related to conventional Pulsed Laser Deposition (PLD). In the PLD process, the ablation plume impinges directly upon the substrate to deposit the thin film, whereas in the LAMBD process, the ablation material is expanded within a concurrently pulsed stream of a reactive gas. The gas pulse serves both to create the desired material and to transport the material to the substrate for deposition of the thin film. One advantage of the LAMBD process is that a chemically reactive carrier gas can be selected to produce the desired chemical products. Depositions yielded 35 nm to 135 nm thick HfO2, and ZrO2 films.Structural and chemical characterization of the films were performed by Auger electron spectroscopy (AES), Rutherford back-scattering (RBS), scanning electron microscopy (SEM), and x-ray diffraction (XRD). Film surface was investigated by atomic force microscopy (AFM) while optical characterization was also performed by means of spectroscopic ellipsometry (SE). Within the process window investigated, the film Hf/O and Zr/O ratios was found to be in the range 0.6 to 1.2. The as deposited films were amorphous with refraction index (RI) at 623 nm wavelength films in the range of 1.22 to 1.27 for the HfO2 and in the range of 1.23 to 1.19 for the ZrO2 films.

Influence of Stoichiometric Variations and Rapid Thermal Processing of β-FESI2 thin Films on their Electrical and Microstructural Properties

1995 ◽  
Vol 402 ◽  
Author(s):  
M. Döscher ◽  
B. Selle ◽  
M. Pauli ◽  
F. Kothe ◽  
J. Szymanski ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Beam ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Rf Sputtering ◽  
Deposition Process ◽  
Silicon Substrates ◽  
Phonon Spectra ◽  
First Results

AbstractAmorphous irondisilicide thin films were deposited on silicon substrates in a RF sputtering process, followed by rapid thermal crystallization by means of moving the thin film beneath a line-shaped electron beam to form β-FeSi2. Depending on the deposition process parameters, films of a different stoichiometry can be produced. The deviations from the 1:2 stoichiometry, which have been determined by Rutherford Backscattering (RBS), are related to changes in the microstructure (studied by microscopic methods like TEM and AFM), the infrared phonon spectra (measured by FTIR spectroscopy) and the electrical properties of the crystallized films. The microstructure of the iron disilicide thin films is improved when the composition significantly deviates from 2.0, probably due to silicon interstitials in the silicide thin film. Films of different stoichiometry result in p- or n-type thin films with carrier densities below 5×1018cm−3 and hall mobilities up to 180cm 2/Vs. First results show that not only β-FeSi2-siliconheterojunctions as reported before but also pn-β-FeSi2-homojunctions show rectifying behavior. Rapid thermal processing with the line electron beam leads to a further improvement of the film quality when the scan velocity is increased up to the order of several cm/s.

Indentation Fracture Studies of a BaTiO3 Thin Film on a Silicon Substrate

1995 ◽  
Vol 403 ◽  
Author(s):  
Wai-Ming Ho ◽  
Ran Fu ◽  
Kai-Tak Wan ◽  
Ji Chou ◽  
Tong-Yi Zhang
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Stress Intensity Factor ◽  
Stress Intensity ◽  
Intensity Factor ◽  
Residual Stresses ◽  
Silicon Substrate ◽  
Square Root ◽  
Indentation Fracture ◽  
Batio3 Thin Film

AbstractIt has been experimentally and theoretically found that the critical applied stress intensity factor for indentation cracking also depends linearly on the reciprocal of the square root of crack length when the indentation fracture technique is used to measure residual stresses in thin films.

Plan-View Preparation of TEM Specimens from Thin Films Using Adhesive Tape

2011 ◽  
Vol 17 (6) ◽  
pp. 886-888
Author(s):  
Zsolt Czigány
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Size ◽  
Nanostructured Materials ◽  
Ion Beam ◽  
Adhesive Tape ◽  
Alloy Thin Film ◽  
Preparation Technique ◽  
Plan View ◽  
High Resolution Tem

AbstractA simple plan-view sample preparation technique for transmission electron microscopy (TEM) specimens is proposed for thin films by tearing-off the film with adhesive tape. The demand for very thin samples is highest for nanostructured materials where the structure of 2–5 nm sized features (grains) needs to be resolved; therefore, overlapping of nanometer-sized features should be avoided. The method provides thin areas at the fracture edges of plan-view specimens with thickness in the range of the grain size in the film allowing for artifact free high-resolution TEM imaging. Nanostructured materials typically fracture between the grains providing areas with the thickness of the grain size. Besides the swiftness of the method, the samples are free of surface amorphization artifacts, which can occur in ion beam milling up to 1 nm depth even at low energy ion bombardment. The thin film tear-off technique is demonstrated on a CuMn alloy thin film with grain size of 2 nm.

RF Magnetron Sputtered Ba0.96Ca0.04Ti0.84Zr0.16O3 Thin Films for High Frequency Applications

2004 ◽  
Vol 833 ◽  
Author(s):  
Ali Mahmud ◽  
T. S. Kalkur ◽  
N. Cramer
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Constant ◽  
Substrate Temperature ◽  
High Frequency ◽  
Satellite Communications ◽  
Ferroelectric Thin Films ◽  
Paraelectric State ◽  
Deposited Films

ABSTRACTPerovskite ferroelectric thin films in the paraelectric state exhibit outstanding dielectric properties, even at high frequencies (>1 GHz). The tunable dielectric constant of ferroelectric thin films can be used to design frequency and phase agile components. High dielectric constant thin film ferroelectric materials in the paraelectric state have received enormous attention due to their feasibility in applications such as decoupling capacitors and tunable microwave capacitors; the latter application has been fueled by the recent explosion in wireless and satellite communications. This paper reportsBa0.96Ca 0.04Ti0.84Zr0.16O3 (BCTZ) thin films that were deposited on Pt electrodes using radio frequency magnetron sputtering at a low (450 °C) substrate temperature. Sputtered thin film BCTZ at low substrate temperature is compatible with conventional integrated circuit technology. The structural characterization of the deposited films was performed by x-ray diffraction. The electrical characterization of the films was achieved by capacitance-voltage, current-voltage, and S-parameter (via vector network analyzer) measurements. In addition, the effect of post annealing on the deposited films was investigated. A detailed understanding of both their processing and material properties is discussed for successful implementation in high frequency applications.

Identification of the Failure Mechanism of a Thin Film on a Thick Substrate by Means of Synchrotron X-Ray Topography Combined with Transmission Electron Microscopy

1987 ◽  
Vol 108 ◽  
Author(s):  
D. Goyal ◽  
W. Ng ◽  
A. H. King ◽  
J. C. Bilello
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Film Thickness ◽  
Film Stress ◽  
Silicon Substrates ◽  
X Ray ◽  
Transmission Electron ◽  
Thick Substrate

ABSTRACTWe have used synchrotron x-ray topographic techniques to study the stresses in thin films formed upon silicon substrates either by evaporation or sputtering. It is found that the film stress generally decreases with increasing film thickness for evaporated films, but film delamination occurs at a well defined film thickness. Transmission electron microscope studies have been performed on the same specimens in order to reveal what mechanisms are involved with the delamination of the films.

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