Application of Analytical Electron Microscopy to Ion Implantation and Near Surface Microstructures

1985 ◽  
Vol 62 ◽  
Author(s):  
P. S. Sklad
Keyword(s):  
Electron Microscopy ◽  
Ion Implantation ◽  
Ion Beam ◽  
Analytical Electron Microscopy ◽  
Theoretical Models ◽  
Solute Concentration ◽  
Specimen Preparation ◽  
Second Phase ◽  
Near Surface ◽  
Analytical Electron

ABSTRACTSurface modification using ion beam techniques is recognized as an important method for improving surface controlled properties of metallic, ceramic, and semiconductor materials. Determination of the microstructure and composition in regions located within a few hundred nanometers of the surface is essential to gaining an understanding of the mechanisms responsible for the improved properties. Analytical electron microscopy (AEM), high resolution microscopy, and microdiffraction are ideally suited for this purpose. These techniques are powerful tools for characterizing microstructure in terms of solute concentration profiles, second phase formation, lattice damage, crystallinity of the implanted layer and annealing behavior. Such analyses allow correlations with theoretical models, property measurements and results of complementary techniques. The proximity of the regions of interest to the surface also places stringent requirements on specimen preparation techniques. The power of AEM in examining the effects of ion implantation will be illustrated by reviewing the results of several investigations. A brief discussion of some important aspects of specimen preparation will also be included.

Analytical Electron Microscopy of Surface-Modified Ceramics

1985 ◽  
Vol 43 ◽  
pp. 276-279
Author(s):  
P. S. Sklad
Keyword(s):  
Electron Microscopy ◽  
Analytical Electron Microscopy ◽  
Theoretical Models ◽  
Ceramic Materials ◽  
Solute Concentration ◽  
Second Phase ◽  
Analytical Electron ◽  
Implantation Techniques ◽  
Lattice Damage ◽  
Surface Modified

Over the past several years, it has become increasingly evident that materials for proposed advanced energy systems will be required to operate at high temperatures and in aggressive environments. These constraints make structural ceramics attractive materials for these systems. However it is well known that the condition of the specimen surface of ceramic materials is often critical in controlling properties such as fracture toughness, oxidation resistance, and wear resistance. Ion implantation techniques offer the potential of overcoming some of the surface related limitations.While the effects of implantation on surface sensitive properties may be measured indpendently, it is important to understand the microstructural evolution leading to these changes. Analytical electron microscopy provides a useful tool for characterizing the microstructures produced in terms of solute concentration profiles, second phase formation, lattice damage, crystallinity of the implanted layer, and annealing behavior. Such analyses allow correlations to be made with theoretical models, property measurements, and results of complimentary techniques.

Analytical Electron Microscopy of Ion-Implanted Metals

1985 ◽  
Vol 43 ◽  
pp. 282-285
Author(s):  
D.I. Potter ◽  
M. Ahmed ◽  
K. Ruffing
Keyword(s):  
Electron Microscopy ◽  
Ion Implantation ◽  
Friction And Wear ◽  
Analytical Electron Microscopy ◽  
Chemical Compositions ◽  
Surface Chemical ◽  
Near Surface ◽  
The Past ◽  
Analytical Electron ◽  
Property Changes

Ion implantation, used extensively for the past decade in fabricating semiconductor devices, now provides a unique means for altering the near-surface chemical compositions and microstructures of metals. These alterations often significantly improve physical properties that depend on the surface of the material; for example, catalysis, corrosion, oxidation, hardness, friction and wear. Frequently the mechanisms causing these beneficial alterations and property changes remain obscure and much of the current research in the area of ion implantation metallurgy is aimed at identifying such mechanisms. Investigators thus confront two immediate questions: To what extent is the chemical composition changed by implantation? What is the resulting microstructure? These two questions can be investigated very fruitfully with analytical electron microscopy (AEM), as described below.

Second Phase Formation in Aluminum annealed after Ion Implantation with Molybdenum.

1983 ◽  
Vol 27 ◽  
Author(s):  
J. Bentley ◽  
L. D. Stephenson ◽  
R. B. Benson ◽  
P. A. Parrish ◽  
J. K. Hirvonen
Keyword(s):  
Electron Microscopy ◽  
Ion Implantation ◽  
Phase Transformations ◽  
Phase Formation ◽  
Analytical Electron Microscopy ◽  
Second Phase ◽  
Continuous Film ◽  
Video Recordings ◽  
Analytical Electron ◽  
Annealing Experiments

ABSTRACTThe microstructure of aluminum annealed after implantation to peak concentrations of approximately 4.4 and 11 at. % Mo was investigated by analytical electron microscopy. Al12Mo precipitates formed with pseudo-lamellar and continuous film microstructures. Video recordings of insitu annealing experiments revealed the details of the phase transformations.

Preparation of Backthinned Ceramic Specimens

1985 ◽  
Vol 43 ◽  
pp. 182-183
Author(s):  
A. T. Fisher ◽  
P. Angelini
Keyword(s):  
Electron Microscopy ◽  
Analytical Electron Microscopy ◽  
Vacuum System ◽  
Back Surface ◽  
Surface Microstructure ◽  
Ion Milling ◽  
Near Surface ◽  
Depth Profiles ◽  
Analytical Electron ◽  
Ion Implanted

Analytical electron microscopy (AEM) of the near surface microstructure of ion implanted ceramics can provide much information about these materials. Backthinning of specimens results in relatively large thin areas for analysis of precipitates, voids, dislocations, depth profiles of implanted species and other features. One of the most critical stages in the backthinning process is the ion milling procedure. Material sputtered during ion milling can redeposit on the back surface thereby contaminating the specimen with impurities such as Fe, Cr, Ni, Mo, Si, etc. These impurities may originate from the specimen, specimen platform and clamping plates, vacuum system, and other components. The contamination may take the form of discrete particles or continuous films [Fig. 1] and compromises many of the compositional and microstructural analyses. A method is being developed to protect the implanted surface by coating it with NaCl prior to backthinning. Impurities which deposit on the continuous NaCl film during ion milling are removed by immersing the specimen in water and floating the contaminants from the specimen as the salt dissolves.

Pre-Meeting Topical Conference

2002 ◽  
Vol 8 (I1) ◽  
pp. 20-20
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Low Voltage ◽  
Ion Beam ◽  
Analytical Electron Microscopy ◽  
Polymeric Materials ◽  
Specimen Preparation ◽  
Microbeam Analysis ◽  
Scanning Electron

Topic: Characterization of Non-Conductive or Charging Materials by Microbeam AnalysisThe goal of this topical conference is to present the state of the art for materials characterization of non-conductive or charging materials using microbeam analysis. Examples of charging materials include polymeric materials, ceramic materials, and photoresist materials in the microelectronic industry. Also, the characterization of biological specimens will be covered because they are prone to problems related to charging. These materials are of great technological importance and their characterization is still a great challenge because they charge when analyzed with an electron beam. The techniques of microbeam analysis that will be considered are: X-ray Microanalysis in the Electron Microprobe, Low Voltage Scanning Electron Microscopy, Environmental Scanning Electron Microscopy, Analytical Electron Microscopy with Field Emission Transmission Electron Microscopy, and Focused Ion Beam Milling for specimen preparation. World experts will present papers on these topics. Papers from this topical conference will be published in a special issue of Microscopy & Microanalysis.

Analytical Electron Microscopy Studies of Bi-Substituted Garnet Films

1991 ◽  
Vol 232 ◽  
Author(s):  
P. A. Crozier ◽  
P. A. Labun ◽  
T Suzuki
Keyword(s):  
Electron Microscopy ◽  
Analytical Electron Microscopy ◽  
Second Phase ◽  
Processing Conditions ◽  
Transformation Kinetics ◽  
Heating Rates ◽  
Garnet Films ◽  
Analytical Electron ◽  
In Situ Heating

ABSTRACTIn-situ heating in an electron microscope, together with EDX and EELS analysis, was used to characterize as-deposited amorphous and transformed garnet films. It was found that upon initial crystallization, a non-uniform precipitation of a second phase occurred, altering the local chemistry and microstructure of the transformed film. In addition, to study the transformation kinetics in more detail some experiments were conducted at slower heating rates and lower temperatures. It is hoped that the data obtained can be correlated to magnetic property measurements and contribute to the development of improved processing conditions.

Grain Boundary Chemistry in Al-Cu Metallizations as Determined by Analytical Electron Microscopy

1991 ◽  
Vol 229 ◽  
Author(s):  
J. R. Michael ◽  
A. D. Romig ◽  
D. R. Frear
Keyword(s):  
Electron Microscopy ◽  
Integrated Circuits ◽  
Grain Boundary ◽  
Analytical Electron Microscopy ◽  
Second Phase ◽  
Collector Plate ◽  
Analytical Electron ◽  
Cu Thin Film ◽  
Boundary Chemistry ◽  
Interconnect Lines

AbstractAl with additions of Cu is commonly used as the conductor metallizations for integrated circuits (ICs). As the packing density of ICs increases, interconnect lines are required to carry ever higher current densities. Consequently, reliability due to electromigration failure becomes an increasing concern. Cu has been found to increase the lifetimes of these conductors, but the mechanism by which electromigration is improved is not yet fully understood. In order to evaluate certain theories of electromigration it is necessary to have a detailed description of the Cu distribution in the Al microstructure, with emphasis on the distribution of Cu at the grain boundaries. In this study analytical electron microscopy (AEM) has been used to characterize grain boundary regions in an Al-2 wt.% Cu thin film metallization on Si after a variety of thermal treatments. The results of this study indicate that the Cu distribution is dependent on the thermal annealing conditions. At temperatures near the θ phase (CuAl2) solvus, the Cu distribution may be modelled by the collector plate mechanism, in which the grain boundary is depleted in Cu relative to the matrix. At lower temperatures, Cu enrichment of the boundaries occurs, perhaps as a precursor to second phase formation. Natural cooling from the single phase field produces only grain boundary depletion of Cu consistent with the collector-plate mechanism. The kinetic details of the elemental segregation behavior derived from this study can be used to describe microstructural evolution in actual interconnect alloys.

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