scholarly journals Thermodynamics of Paracrystalline Silicon

2000 ◽  
Vol 616 ◽  
Author(s):  
P. M. Voyles ◽  
M. M. J. Treacy ◽  
J. M. Gibson
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Simple Model ◽  
Low Temperature ◽  
Amorphous Silicon ◽  
High Temperatures ◽  
Ordered Structure ◽  
Disordered Structure ◽  
Silicon Thin Films ◽  
Fluctuation Microscopy

AbstractFluctuation microscopy experiments have shown that the as-deposited structure of amorphous silicon thin films is paracrystalline. A paracrystal consists of small (< 3 nm in diameter) topologically crystalline grains separated by a disordered matrix. Here we consider the thermodynamics of paracrystalline silicon as a function of the grain size and the temperature. We offer a simple model that qualitatively explains the observed metastability of the ordered structure at low temperature (300 K), the relaxation towards a more disordered structure at intermediate temperatures (600 K), and the recrystallization at high temperatures (1000 K).

Directional Field Aided Lateral Crystallization of Amorphous Silicon Thin Films

2001 ◽  
Vol 664 ◽  
Author(s):  
Marek A. T. Izmajlowicz ◽  
Neil A. Morrison ◽  
Andrew J. Flewitt ◽  
William I. Milne
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Electric Field ◽  
Amorphous Silicon ◽  
Solid Phase ◽  
Excimer Laser Annealing ◽  
Solid Phase Crystallization ◽  
Metal Induced Crystallization ◽  
Silicon Thin Films ◽  
Induced Crystallization

ABSTRACTFor application to active matrix liquid crystal displays (AMLCDs), a low temperature (< 600 °C) process for the production of polycrystalline silicon is required to permit the use of inexpensive glass substrates. This would allow the integration of drive electronics onto the display panel. Current low temperature processes include excimer laser annealing, which requires expensive equipment, and solid phase crystallization, which requires high temperatures. It is known that by adding small amounts of metals such as nickel to the amorphous silicon the solid phase crystallization temperature can be significantly reduced. The rate of this solid phase metal induced crystallization is increased in the presence of an electric field. Previous work on field aided crystallization has reported crystal growth that either proceeds towards the positive terminal or is independent of the direction of the electric field. In this work, extensive investigation has consistently revealed directional crystallization, from the positive to the negative terminal, of amorphous silicon thin films during heat treatment in the presence of an electric field. This is the first time that this phenomenon has been reported. Models have been proposed for metal induced crystallization with and without an applied electric field in which a reaction between Ni and Si to produce NiSi is the rate-limiting step. The crystallization rate is increased in the presence of an electric field through the drift of positive Ni ions.

Pd2Si-assisted crystallization of amorphous silicon thin films at low temperature

1999 ◽  
Vol 85 (10) ◽  
pp. 7180-7184 ◽  
Author(s):  
Seok-Woon Lee ◽  
Byung-Il Lee ◽  
Tae-Kyung Kim ◽  
Seung-Ki Joo
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Amorphous Silicon ◽  
Silicon Thin Films

Microwave-induced low-temperature crystallization of amorphous silicon thin films

1997 ◽  
Vol 82 (6) ◽  
pp. 2918-2921 ◽  
Author(s):  
Jeong No Lee ◽  
Yong Woo Choi ◽  
Bum Joo Lee ◽  
Byung Tae Ahn
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Amorphous Silicon ◽  
Silicon Thin Films ◽  
Low Temperature Crystallization ◽  
Temperature Crystallization
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