Kinetic Roughening During Rare-Gas Homoepitaxy

2000 ◽  
Vol 616 ◽  
Author(s):  
E. Nabighian ◽  
M. C. Bartelt ◽  
X.D. Zhu
Keyword(s):  
Low Temperature ◽  
Formation Process ◽  
Layer Growth ◽  
Rare Gas ◽  
Layer By Layer ◽  
Sticking Coefficient ◽  
Island Formation ◽  
Kinetic Roughening ◽  
Optical Reflectivity

AbstractUsing an optical reflectivity difference technique, we monitored the growth of multilayer Xe films on a commensurate monolayer of Xe on Ni(111), from 35 to 60K. A transition occurs near 40K, from rough growth at low temperature to quasi-layer-by-layer growth characterized by persistent oscillations in the reflectivity difference. We discuss this transition in terms of changes in the island formation process and the onset of second layer nucleation. The Xe sticking coefficient at 40K is obtained from the period of the oscillations in the reflectivity difference. We find that the sticking coefficient decreases with increasing fihn thickness at fixed Xe pressure.

Layer-by-Layer Growth of AlAs Buffer Layer for GaAs on Si at Low Temperature by Atomic Layer Epitaxy

1993 ◽  
Vol 32 (Part 2, No. 2B) ◽  
pp. L236-L238 ◽  
Author(s):  
Kuninori Kitahara ◽  
Nobuyuki Ohtsuka ◽  
Toshihiko Ashino ◽  
Masashi Ozeki ◽  
Kazuo Nakajima
Keyword(s):  
Low Temperature ◽  
Buffer Layer ◽  
Atomic Layer ◽  
Layer Growth ◽  
Atomic Layer Epitaxy ◽  
Layer By Layer ◽  
Gaas On Si

Layer-by-layer growth and island formation in CdSe/ZnSe heteroepitaxy

2007 ◽  
Vol 301-302 ◽  
pp. 310-314 ◽  
Author(s):  
S. Mahapatra ◽  
T. Kiessling ◽  
E. Margapoti ◽  
G.V. Astakhov ◽  
W. Ossau ◽  
...  
Keyword(s):  
Layer Growth ◽  
Layer By Layer ◽  
Island Formation

Use of Low Temperature Si MBE Growth Techniques for High Performance SiGe/Si Electronics

1992 ◽  
Vol 281 ◽  
Author(s):  
E. T. Croke ◽  
M. J. Harrell ◽  
M. E. Mierzwinski ◽  
J. D. Plummer
Keyword(s):  
Low Temperature ◽  
Heterojunction Bipolar Transistors ◽  
High Performance ◽  
Field Effect Transistors ◽  
Layer Growth ◽  
Layer By Layer ◽  
Strained Si ◽  
Mbe Growth ◽  
Sb Doping ◽  
Growth Method

ABSTRACTThrough the use of low temperature Si molecular beam epitaxy (MBE), we have fabricated high performance Si1−x Gex/Si heterojunction bipolar transistors (HBTs) and bipolar inversion-channel field effect transistors (BICFETs). Our growth method employs a high temperature Si-assisted desorption followed by MBE growth at a temperature only slightly in excess of the critical temperature for two-dimensional layer-by-layer growth. [1] At this temperature, segregation of Sb has previously been shown to be kinetically limited. [2] In addition, significantly more strain can be frozen into such an epitaxial layer as compared with those grown at higher temperatures.[3] Secondary ion mass spectroscopy (SIMS) data verify the abruptness of the Sb doping profiles in our device structures. High resolution x-ray diffraction (HRXRD) data are consistent with planar, coherently strained Si1−x Gex layers in our HBTs. A gain of 2690 (3210) is observed in our BICFETs at 300 K (7 K).

Suppression of Island Formation During Initial Stages of Ge/Si(100) Growth by Ion-Assisted Molecular Beam Epitaxy

1992 ◽  
Vol 268 ◽  
Author(s):  
C.J. Tsai ◽  
H.A. Atwater
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Elastic Stability ◽  
Kinetic Mechanism ◽  
Layer Growth ◽  
Layer By Layer ◽  
Island Formation ◽  
Defect Generation ◽  
Linear Elastic ◽  
Amplitude Fluctuations

ABSTRACTWe have observed a suppression of island formation and an increase in the thickness limit for layer-by-layer growth of Ge on Si (100) by ion-assisted molecular beam epitaxy. Island suppression is observed both for ion energies at which surface defect generation dominates bulk defect generation and at which the majority of defects generated are bulk defects. This experiment, in conjunction with results of a linear elastic stability model for islanding, reveals that the kinetic mechanism for the suppression of island formation via ion bombardment is the reduction of surface amplitude fluctuations during the early stages of growth.

Either step-flow or layer-by-layer growth for AlN on SiC (0001) substrates

2003 ◽  
Vol 798 ◽  
Author(s):  
Jun Suda ◽  
Norio Onojima ◽  
Tsunenobu Kimoto ◽  
Hiroyuki Matsunami
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
High Growth ◽  
Layer Growth ◽  
Growth Mode ◽  
Crystalline Quality ◽  
Layer By Layer ◽  
Surface Pretreatment ◽  
Step Flow

ABSTRACTAlN was grown on 4H- or 6H-SiC (0001) on-axis substrates by plasma-assisted molecular beam epitaxy. By utilizing optimized SiC surface pretreatment, RHEED oscillations just after the growth of AlN were obtained with high reproducibility. This study focused on the growth kinetics of AlN and the correlation between kinetics and the crystalline quality of the grown layers. It was found that the growth mode changed from layer-by-layer to step-flow for high growth temperatures, while for lower temperatures the layer-by-layer growth mode persisted. The mechanism responsible for the change in growth mode is discussed. Symmetrical (0002) and asymmetrical (01–14) x-ray rocking curve measurements were carried out to evaluate the crystalline quality. For the (0002) peak, both high-temperature and low-temperature grown layers showed almost the same FWHM values. On the other hand, for the (01–14) peak, the FWHM of low-temperature grown AlN was much smaller (180 arcsec) than that of the high-temperature grown AlN (450 arcsec).

Atomistic calculations on low-temperature layer-by-layer growth

1994 ◽  
Vol 307-309 ◽  
pp. 526-530 ◽  
Author(s):  
M. Breeman ◽  
G.T. Barkema ◽  
D.O. Boerma
Keyword(s):  
Low Temperature ◽  
Layer Growth ◽  
Layer By Layer ◽  
Atomistic Calculations

Cyclically Varying Hydrogen Dilution for the Growth of Very Thin and Doped Nanocrystalline Silicon Films by Hot-Wire CVD

2008 ◽  
Vol 1066 ◽  
Author(s):  
Fernando Villar Lopez ◽  
Aldrin Antony ◽  
Delfina Muñoz ◽  
Fredy Rojas ◽  
Jordi Escarré ◽  
...  
Keyword(s):  
Low Temperature ◽  
Chemical Vapour ◽  
Nanocrystalline Silicon ◽  
Deposition Process ◽  
Layer Growth ◽  
Layer By Layer ◽  
Hot Wire ◽  
Plastic Substrates ◽  
Hydrogen Dilution ◽  
Deposition Conditions

ABSTRACTAn important issue for the massive implementation of thin silicon technology in photovoltaic is the use of plastic substrates, which allow the use of roll-to-roll deposition systems and planar monolithic interconnection between the cells. However, the use of plastic substrates require a fully low temperature process; especially critical in the deposition of the thin amorphous (a-Si:H) or nanocrystalline (nc-Si:H) layers. Hot-Wire Chemical Vapour Deposition (HW-CVD) technique has demonstrated to be a good alternative to deposit quality thin films at low temperature. In this paper we focus our study on very thin (50 nm) n- and p-doped nc-Si:H films deposited at low substrate temperature around 100°C. We have observed that, in this low temperature deposition conditions, the promotion of an a Si:H incubation layer leads to a poor doping efficiency and poor electrical properties of the films. Hence, in addition to the optimization of the deposition conditions, we deposited doped layers by cyclically varying the hydrogen dilution (CVH) during deposition process. This CVH method promotes a layer-by-layer growth and inhibits the formation of the incubation layer. Several doped nc-Si:H layers have been deposited with and without this CVH method. The structural, electrical and optical properties of these films and advantage of CVH in improving the device quality of the thin doped layers are reported.

Transmission Electron Microscopy characterization of epitaxial III-V semiconductor thin films grown on Si(100) by ion-assisted deposition

1990 ◽  
Vol 48 (4) ◽  
pp. 686-687
Author(s):  
L. Hultman ◽  
C.-H. Choi ◽  
R. Kaspi ◽  
R. Ai ◽  
S.A. Barnett
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Ion Irradiation ◽  
High Energy ◽  
Nucleation Mechanism ◽  
Layer By Layer ◽  
Extended Defect ◽  
Island Formation ◽  
Si Substrates ◽  
Transmission Electron

III-V semiconductor films nucleate by the Stranski-Krastanov (SK) mechanism on Si substrates. Many of the extended defects present in the films are believed to result from the island formation and coalescence stage of SK growth. We have recently shown that low (-30 eV) energy, high flux (4 ions per deposited atom), Ar ion irradiation during nucleation of III-V semiconductors on Si substrates prolongs the 1ayer-by-layer stage of SK nucleation, leading to a decrease in extended defect densities. Furthermore, the epitaxial temperature was reduced by >100°C due to ion irradiation. The effect of ion bombardment on the nucleation mechanism was explained as being due to ion-induced dissociation of three-dimensional islands and ion-enhanced surface diffusion.For the case of InAs grown at 380°C on Si(100) (11% lattice mismatch), where island formation is expected after ≤ 1 monolayer (ML) during molecular beam epitaxy (MBE), in-situ reflection high-energy electron diffraction (RHEED) showed that 28 eV Ar ion irradiation prolonged the layer-by-layer stage of SK nucleation up to 10 ML. Otherion energies maintained layer-by-layer growth to lesser thicknesses. The ion-induced change in nucleation mechanism resulted in smoother surfaces and improved the crystalline perfection of thicker films as shown by transmission electron microscopy and X-ray rocking curve studies.

Oblique-incidence Reflectivity Difference (OI-RD) and Leed Studies of Adsorption and Growth of Xe on Nb(110)

2003 ◽  
Vol 780 ◽  
Author(s):  
P. Thomas ◽  
E. Nabighian ◽  
M.C. Bartelt ◽  
C.Y. Fong ◽  
X.D. Zhu
Keyword(s):  
Transition Layer ◽  
Layer Growth ◽  
Flow Mode ◽  
Layer By Layer ◽  
Zeroth Order ◽  
Step Flow ◽  
Low Energy Electron Diffraction ◽  
Oriented Film ◽  
Low Energy Electron

AbstractWe studied adsorption, growth and desorption of Xe on Nb(110) using an in-situ obliqueincidence reflectivity difference (OI-RD) technique and low energy electron diffraction (LEED) from 32 K to 100 K. The results show that Xe grows a (111)-oriented film after a transition layer is formed on Nb(110). The transition layer consists of three layers. The first two layers are disordered with Xe-Xe separation significantly larger than the bulk value. The third monolayer forms a close packed (111) structure on top of the tensile-strained double layer and serves as a template for subsequent homoepitaxy. The adsorption of the first and the second layers are zeroth order with sticking coefficient close to one. Growth of the Xe(111) film on the transition layer proceeds in a step flow mode from 54K to 40K. At 40K, an incomplete layer-by-layer growth is observed while below 35K the growth proceeds in a multilayer mode.

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