Floating Body Induced Transient Characteristics in Polycrystalline Silicon TFTs

2000 ◽  
Vol 609 ◽  
Author(s):  
Y.Z. Xu ◽  
F.J. Clough ◽  
E.M.S. Narayanan ◽  
R. Cross
Keyword(s):  
Polycrystalline Silicon ◽  
Switching Behavior ◽  
Floating Body ◽  
Defect States ◽  
Body Effect ◽  
Transient Characteristics ◽  
Floating Body Effect ◽  
Insight Into ◽  
Numerical Simulator

ABSTRACTThe floating body induced transient characteristics in polycrystalline silicon TFTs is reported. An obvious current surge, arising from the floating body effect, is observed. Using a 2D numerical simulator and comparisons to SIMOX FETs, the insight into the mechanisms governing the experimentally observed switching behavior of poly-Si devices is obtained. It is found that the defect states in poly-Si cause the current surge and exert an effect equivalent to doping in SIMOX FETs.

Body Potential Design Using Narrow and Shallow Halo to Reduce the Floating Body Effect of SOI-MOSFET

2002 ◽  
Author(s):  
Risho Koh ◽  
Yukishige Saito ◽  
Hisashi Takemura ◽  
Kohichi Arai ◽  
Mitsuru Narihiro ◽  
...  
Keyword(s):  
Floating Body ◽  
Body Effect ◽  
Soi Mosfet ◽  
Floating Body Effect ◽  
Body Potential
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