A Case for Molecular Hydrogen Being the Mobile H Species in a-Si:H

2000 ◽  
Vol 609 ◽  
Author(s):  
P. A. Fedders

ABSTRACTThe mechanism (or mechanisms) of hydrogen transport in a-Si:H is of great intrinsic interest but is also important for the understanding of a number of phenomena such as light induced defects. We find that the literature includes many calculations for the activation energy for hydrogen diffusion that are at best misleading and often interpreted incorrectly. In this paper we summarize a number of calculations that apply to particles hopping in complex media and apply the results to a-Si:H. These calculations, coupled with existing estimates of the energy of various H configurations in a-Si:H, show that the standard picture is likely to be incorrect. However, previous work on the mobility of molecular hydrogen in crystalline Si coupled with some molecular dynamics simulations presented in this paper show that the mobile species of hydrogen in a-Si:H may well be molecular.

1995 ◽  
Vol 52 (6) ◽  
pp. 4162-4170 ◽  
Author(s):  
B. Roux ◽  
H. Jaffrezic ◽  
A. Chevarier ◽  
N. Chevarier ◽  
M. T. Magda

RSC Advances ◽  
2014 ◽  
Vol 4 (97) ◽  
pp. 54447-54453 ◽  
Author(s):  
Md Bin Yeamin ◽  
N. Faginas-Lago ◽  
M. Albertí ◽  
I. G. Cuesta ◽  
J. Sánchez-Marín ◽  
...  

Multiscale modeling and simulation (MMS) combining B97-D/TZV2P DFT calculations and molecular dynamics simulations are performed to investigate the adsorption of hydrogen over coronene as a model of graphene.


2016 ◽  
Vol 120 (14) ◽  
pp. 7500-7509 ◽  
Author(s):  
X. W. Zhou ◽  
F. El Gabaly ◽  
V. Stavila ◽  
M. D. Allendorf

1993 ◽  
Vol 297 ◽  
Author(s):  
P.A. Fedders

We give a brief description of the various classes of molecular dynamics simulations and then describe what we have learned from our simulations recently. This includes information on the nature of defects in a-Si:H including positions in the energy gap and localization, relaxation and rearrangement effects, light induced defects, and the motion of H atoms and Si dangling bonds.


2018 ◽  
Vol 18 (3) ◽  
pp. 481-483 ◽  
Author(s):  
Arto Javanainen ◽  
Henrique Vazquez Muinos ◽  
Kai Nordlund ◽  
Flyura Djurabekova ◽  
Kenneth F. Galloway ◽  
...  

2002 ◽  
Vol 733 ◽  
Author(s):  
D. Shah ◽  
I. A. Bitsanis ◽  
U. Natarajan ◽  
E. Hackett ◽  
E.P. Giannelis

AbstractMolecular dynamics simulations were used to study the interlayer structure and dynamics of polystyrene (PS) and polystyrene-polyisoprene (PS-PI) block copolymers intercalated in organically modified layered silicates. In the case of PS the polymer chains displace the aliphatic surfactant chains and reside adjacent to the silicate layers. The electrostatic interactions between the aromatic rings on the PS chains and the silicate surface drive the intercalation of the polymer into the host galleries. PI, which lacks such electrostatic interactions, is immiscible (does not intercalate) with the host. There appears to be a minimum number of PS mers for intercalation of PS-PI copolymers to take place. The intercalated copolymer appears to structure inside the host galleries with the PS mers adjacent to the silicate layers and the corresponding PI away from the surface and towards the middle of the gallery. Using the mean square displacements we find that PS is the least mobile species in the galleries with the surfactant chains been the most mobile of all.


1998 ◽  
Vol 507 ◽  
Author(s):  
R. Biswas ◽  
B. C. Pana

ABSTRACTMolecular dynamics simulations find light-induced metastable defects to be silicon dangling bonds accompanied by (Si-H)2 defect complexes that have two Si-H bonds. These complexes are formed by pairs of hydrogen breaking a silicon bond. This supports the model of Branz. These defects are the analogue of the H2* defect in c-Si and their energy correlates with the bond-angle strain. Several features of annealing including E-field induced effects are well accounted for by the (Si-H)2 defect.


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