Effect of Fast Electron Irradiation on Electrical and Optical Properties of CdGeAs2 and ZnGep2

1999 ◽  
Vol 607 ◽  
Author(s):  
I. Zwieback ◽  
J. Maffetone ◽  
D. Perlov ◽  
J. Harper ◽  
W. Ruderman ◽  
...  

AbstractWe report on the effects of fast electron irradiation on the optical absorption (α) of CdGeAs2and ZnGeP2 and on the electrical properties of CdGeAs2. In p-CdGeAs2 irradiation led to the reduction in α and an increase in the electrical resistivity. The lowest values of α (about 0.1 cm' at 5µm<λ<10µm) were obtained on irradiated crystals of p-type with the highest degree of compensation. Further accumulation of the electron dose caused conversion to n-type and deterioration of the optical transmission. In ZnGeP2 irradiation caused a decrease in a at λ>0.85 λm and increase in α at λ<0.85 μm. At λ=2.05 μm, α for the o-ray could be reduced to less than 0.08 cm−1. At higher doses, saturation in α was observed. The effects of irradiation are discussed in connection with possible mechanisms of optical absorption in CdGeAs2 and ZnGeP2.

RSC Advances ◽  
2014 ◽  
Vol 4 (78) ◽  
pp. 41294-41300 ◽  
Author(s):  
Y. S. Zou ◽  
H. P. Wang ◽  
S. L. Zhang ◽  
D. Lou ◽  
Y. H. Dong ◽  
...  

P-type Mg doped CuAlO2 films with high crystallinity are prepared by pulsed laser deposition followed by annealing, and exhibit enhanced conductivity and tunable optical band gaps.


2009 ◽  
Vol 95 (26) ◽  
pp. 261904 ◽  
Author(s):  
B. N. Pantha ◽  
A. Sedhain ◽  
J. Li ◽  
J. Y. Lin ◽  
H. X. Jiang

2011 ◽  
Vol 110 (12) ◽  
pp. 123707 ◽  
Author(s):  
Marie A. Mayer ◽  
Soojeong Choi ◽  
Oliver Bierwagen ◽  
Holland M. Smith ◽  
Eugene E. Haller ◽  
...  

2006 ◽  
Vol 99 (1) ◽  
pp. 013512 ◽  
Author(s):  
Lihua Bai ◽  
Chunchuan Xu ◽  
N. C. Giles ◽  
K. Nagashio ◽  
R. S. Feigelson

2013 ◽  
Vol 581 ◽  
pp. 502-507 ◽  
Author(s):  
Fangting Lin ◽  
Cai Gao ◽  
Xiaoshan Zhou ◽  
Wangzhou Shi ◽  
Aiyun Liu

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