Effect of Fast Electron Irradiation on Electrical and Optical Properties of CdGeAs2 and ZnGep2
AbstractWe report on the effects of fast electron irradiation on the optical absorption (α) of CdGeAs2and ZnGeP2 and on the electrical properties of CdGeAs2. In p-CdGeAs2 irradiation led to the reduction in α and an increase in the electrical resistivity. The lowest values of α (about 0.1 cm' at 5µm<λ<10µm) were obtained on irradiated crystals of p-type with the highest degree of compensation. Further accumulation of the electron dose caused conversion to n-type and deterioration of the optical transmission. In ZnGeP2 irradiation caused a decrease in a at λ>0.85 λm and increase in α at λ<0.85 μm. At λ=2.05 μm, α for the o-ray could be reduced to less than 0.08 cm−1. At higher doses, saturation in α was observed. The effects of irradiation are discussed in connection with possible mechanisms of optical absorption in CdGeAs2 and ZnGeP2.