Thermal Annealing Recovery of Intersubband Transition in Proton-Irradiated GaAs/Al0.3Ga0.7As Multiple Quantum Wells

1999 ◽  
Vol 607 ◽  
Author(s):  
H.S. Gingrich ◽  
C. Morath ◽  
M.O. Manasreh ◽  
P. Ballet ◽  
J.B. Smathers ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Absorption Spectra ◽  
Thermal Annealing ◽  
Isothermal Annealing ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Intersubband Transitions ◽  
Dimensional Electron Gas ◽  
Induced Defects ◽  
Irradiation Induced Defects

AbstractOptical absorption spectra of intersubband transitions in heavily proton irradiated n-type GaAs/AlGaAs multiple quantum wells were studied as a function of isochronal and isothermal annealing. The absorption spectra of intersubband transitions were depleted in samples irradiated with 1MeV proton doses higher than 1.0 × 1014 cm−2. Thermal annealing of the irradiated samples show that the intersubband transitions are recovered. The relatively lower annealing temperatures at which the recovery is observed indicate that the irradiation-induced defects that trapped the two-dimensional electron gas in the quantum wells are vacancy and interstitial related defects. Once these traps are thermally annealed the electrons are released back to the quantum wells, resulting in the recovery of the intersubband transitions.

Thermal annealing recovery of intersubband transitions in proton-irradiated GaAs/AlGaAs multiple quantum wells

2000 ◽  
Vol 77 (18) ◽  
pp. 2867-2869 ◽  
Author(s):  
F. Hegeler ◽  
M. O. Manasreh ◽  
C. Morath ◽  
P. Ballet ◽  
H. Yang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Thermal Annealing ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Intersubband Transitions

Degradation of Intersubband Transitions in Electron Irradiated GaAs/AlGaAs Multiple Quantum Wells With Superlattice Barriers

1999 ◽  
Vol 607 ◽  
Author(s):  
C.P. Morath ◽  
M.O. Manasreh ◽  
H.S. Gingrich ◽  
H.J. von Bardeleben ◽  
P. Ballet ◽  
...  
Keyword(s):  
Excited State ◽  
Quantum Wells ◽  
Electron Irradiation ◽  
Ground State ◽  
Irradiation Dose ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Intersubband Transitions ◽  
First Excited State ◽  
Induced Defects

AbstractIntersubband transitions in GaAs/AIGaAs multiple quantum wells (MQWs) are studied as a function of 2 MeV electron irradiation doses using the optical absorption technique. The MQW structure was designed with a 5 period Al.4Ga.6As/GaAs superlattice barrier, and two transitions are observed in the spectra. These transitions occur from the ground state to the first excited state and to the miniband formed by the superlattice barrier. The total integrated area from both transition spectra are studied as a function of temperature and electron irradiation dose. For the ground state to first excited state transition the total integrated area decreases exponentially as the irradiation dose increases, which could be explained in terms of the trapping of the 2D-electron gas in the quantum well by the irradiation induced defects. In comparison, the intensity of the ground state to miniband transition was found to increase exponentially as a function of the irradiation dose. Two possible explanations for this behavior are suggested. The temperature dependence of the integrated area of both transitions is also presented.

γ-Ray Irradiation Effect on the Intersubband Transition in Ingaas/Aigaas Multiple Quantum Wells

1997 ◽  
Vol 484 ◽  
Author(s):  
M. O. Manasreh ◽  
J. R. Chavez ◽  
W. T. Kemp ◽  
K. Hoenshel ◽  
M. Missous
Keyword(s):  
Quantum Wells ◽  
Irradiation Dose ◽  
Multiple Quantum Wells ◽  
Irradiation Effect ◽  
Multiple Quantum ◽  
Intersubband Transition ◽  
Intersubband Transitions ◽  
2Deg Density ◽  
Γ Ray ◽  
Dimensional Electron Gas

AbstractIntersubband transitions in n-type InGaAs/AlGaAs multiple quantum wells were studied as a function of 1.0 to 5.0 MRad γ-ray irradiation dose using the optical absorption technique. The spectra were recorded at both 295 and 77K. The results show that the total integrated area of the intersubband transition is decreased as the irradiation dose is increased. This could be explained as follows: The secondary electrons generated from the γ-ray irradiation cause lattice damages where traps and point defects are created. Some of the electrons in the quantum wells are trapped by these defects causing the two dimensional electron gas (2DEG) density to decrease. The reduction of the 2DEG density thus leads to the reduction of the total integrated area of the intersubband transitions.

Intrasubband and intersubband transitions in GaAs∕AlxGa1−xAs multiple quantum wells

2007 ◽  
Vol 90 (16) ◽  
pp. 162111
Author(s):  
J. M. Li ◽  
K. Y. Qian ◽  
Q. S. Zhu ◽  
Z. G. Wang
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Intersubband Transitions
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