Near-Field Imaging of the Microwave Dielectric Properties of Single-Crystal PbTiO3 and Thin-Film Sr1−xBxTiO3

1999 ◽  
Vol 603 ◽  
Author(s):  
Y.G. Wang ◽  
M.E. Reeves ◽  
W. Chang ◽  
J.S. Horwitz ◽  
W. Kim

AbstractA PbTiO3 crystal and Sr1−xBaxTiO3 films have been studied by near-field scanning microwave microscopy (SMM). In the PbTiO3 crystal, dielectric properties and topography are obtained simultaneously. In Sr1−xBaxTiO3 films, local variations and sample-to-sample differences are observed. To quantitatively determine local dielectric permittivity and loss, we also carry out theoretical calculations on dependence of resonant frequency and quality factor on dielectric constants of bulk samples and thin films. Good agreements between experimental and theoretical results are obtained.

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2021 ◽  
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Author(s):  
Xianfeng Zhang ◽  
Zhe Wu ◽  
Quansong Lan ◽  
Zhiliao Du ◽  
Quanxin Zhou ◽  
...  

2014 ◽  
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pp. 023113 ◽  
Author(s):  
J. C. Weber ◽  
P. T. Blanchard ◽  
A. W. Sanders ◽  
A. Imtiaz ◽  
T. M. Wallis ◽  
...  

2012 ◽  
Vol 112 (8) ◽  
pp. 084318 ◽  
Author(s):  
Curtis Balusek ◽  
Barry Friedman ◽  
Darwin Luna ◽  
Brian Oetiker ◽  
Arsen Babajanyan ◽  
...  

2009 ◽  
Vol 23 (06n07) ◽  
pp. 1021-1027
Author(s):  
YONGJUN GU ◽  
JINLIANG HUANG ◽  
DAOMING SUN ◽  
QIAN LI ◽  
XIAO WANG ◽  
...  

Effects of V 2 O 5 addition on the microwave dielectric properties of 16 CaO -9 Li 2 O -12 Sm 2 O 3-63 TiO 2 (abbreviated CLST) ceramics prepared by conventional mixed oxides method were investigated as a function of V 2 O 5 content and sintering temperature. All the specimens were sintered between 1100°C and 1250°C. The sintering temperature of the CLST ceramics was lowered by 100°C with V 2 O 5 addition. With the changing content of V 2 O 5, the dielectric constants lie between 88.6 and 108.2, while the Q × f values are between 3275 and 6573 GHz. Especially, the specimens doped by 0.75 wt% V 2 O 5 sintered at 1200°C and 1250°C for 3 h show good microwave dielectric properties with Kr =100.4-108.2, Q × f >4500 GHz , and TCF=7-8 ppm/°C. Obviously, V 2 O 5 could be used as a suitable sintering aid that could improve densification and microwave dielectric properties of the CLST ceramics.


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