Autostoichiometric Mocvd Of Multicomponent Thin Films LiTaO3, LiNbO3 and SrxBa1-xNbO6

1999 ◽  
Vol 597 ◽  
Author(s):  
R. Zhang ◽  
R. Xu
Keyword(s):  
Thin Films ◽  
Single Phase ◽  
Evaluation Method ◽  
Chemical Nature ◽  
Decomposition Analysis ◽  
Deposition Process ◽  
Heterometallic Alkoxides ◽  
Evaporation Characteristic ◽  
Single Precursor ◽  
Heterometallic Alkoxide

AbstractA novel stoichiometric vapor deposition process, Autostoichiometric MOCVD, was developed in this study to prepare stoichiometric thin films. Heterometallic alkoxides were used as single precursor for two different metal components in Autostoichiometric MOCVD. The molecular ratios of the metals were conserved through the precursor evaporation and the deposition reactions based on the chemical nature of precursors and the deposition reaction mechanisms. A non-stoichiometric factor K was defined to study the evaporation process of precursors. A precursor evaluation method using the K factor and the thermal decomposition analysis was introduced to quantitatively analyze the stoichiometric evaporation characteristic of a heterometallic alkoxide precursor. Single phase LiTaO3, LiNbO3, SrNb2O6 and BaNb2O6 films were successfully obtained using precursor LiTa(n-OBut)6 or LiTa(i-OBut)6, LiNb(n-OBut)6, SrNb2(n-OBut)12 and BaNb2(n-OBut)12, respectively. Solid solution Sr1-x.BaxNb2O6(SBN) films were also successfully obtained by a two-step Autostoichiometric MOCVD.

Chemical Vapor Deposition of Sr1−xBaxNb2O6 Thin Films Using Metal Alkoxide Precursors

2000 ◽  
Vol 15 (8) ◽  
pp. 1702-1708
Author(s):  
Ruichao Zhang ◽  
Ren Xu
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Single Phase ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Thin Layers ◽  
Metal Alkoxide ◽  
Stoichiometry Control ◽  
Alkoxide Precursors

A novel two-step metalorganic chemical vapor deposition process was used in this study to prepare Sr1−xBaxNb2O6 (SBN) thin films. Two thin layers of single-phase SrNb2O6 and BaNb2O6 were deposited alternately on a silicon substrate, and the solid solution of SBN was obtained by high-temperature annealing. The stoichiometry control of the SrNb2O6 and the BaNb2O6 thin films was achieved through deposition process control, according to the evaporation characteristics of double metal alkoxide. The evaporation behavior of double metal alkoxide precursors SrNb2(1-OC4H9)12 and BaNb2(1-OC4H9)12 was studied, and the results were compared with the evaporation of single alkoxide Nb(1-OC4H9)5.

RAPIDLY ANNEALED Bi(Pb)SrCaCuO THIN FILMS PREPARED BY A 2223 STOICHIOMETRIC TARGET SPUTTERING

1996 ◽  
Vol 10 (08) ◽  
pp. 957-966 ◽  
Author(s):  
S. HIGO ◽  
S. KOBA ◽  
Y. HAKURAKU ◽  
T. OGUSHI ◽  
I. KAWANO ◽  
...  
Keyword(s):  
Thin Films ◽  
Single Phase ◽  
Deposition Process ◽  
Bulk Sample ◽  
Annealing Process ◽  
Superconducting Thin Films ◽  
Superconducting Properties ◽  
Rapid Annealing ◽  
Single Target ◽  
Short Time

Thin films of BiSrCaCuO were prepared on MgO (100) by a single target sputtering. This deposition process yielded c-axis oriented superconducting thin films with a smooth surface. The as-grown films grown at 670–690°C showed 2223 single phase and zero resistivity at about 60 K. The as-grown films were directly placed on a Bi(Pb)SrCaCuO bulk sample, and then rapidly annealed at 835–845°C within 40 s in air. The superconducting properties of the annealed Bi(Pb)SrCaCuO films were greatly improved by optimizing the temperature and time during rapid annealing. Films annealed at 840°C for 30s in air showed zero resistivity at 100 K and had the critital current of about 1×106 A/cm 2 at 77 K. The surfaces of these films on MgO were black and smooth. The film quality is greatly improved by means of annealing process at 840°C for a very short time of 30 s in air after deposition.

Investigation of ultra-thin films of YBa2Cu3O7−δ grown on MgO

1990 ◽  
Vol 48 (4) ◽  
pp. 6-7
Author(s):  
S.K. Streiffer ◽  
C.B. Eom ◽  
J.C. Bravman ◽  
T.H. Geballet
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Deposition Process ◽  
Nucleation And Growth ◽  
Multilayer Structures ◽  
Rf Power ◽  
Oxygen Loss ◽  
Transmission Electron ◽  
Single Target ◽  
Mtorr Argon

The study of very thin (<15 nm) YBa2Cu3O7−δ (YBCO) films is necessary both for investigating the nucleation and growth of films of this material and for achieving a better understanding of multilayer structures incorporating such thin YBCO regions. We have used transmission electron microscopy to examine ultra-thin films grown on MgO substrates by single-target, off-axis magnetron sputtering; details of the deposition process have been reported elsewhere. Briefly, polished MgO substrates were attached to a block placed at 90° to the sputtering target and heated to 650 °C. The sputtering was performed in 10 mtorr oxygen and 40 mtorr argon with an rf power of 125 watts. After deposition, the chamber was vented to 500 torr oxygen and allowed to cool to room temperature. Because of YBCO’s susceptibility to environmental degradation and oxygen loss, the technique of Xi, et al. was followed and a protective overlayer of amorphous YBCO was deposited on the just-grown films.

Electron microscopic characterization of diamond thin films and substrates for diamond heteroepitaxial growth

1989 ◽  
Vol 47 ◽  
pp. 592-593
Author(s):  
J.B. Posthill ◽  
R.P. Burns ◽  
R.A. Rudder ◽  
Y.H. Lee ◽  
R.J. Markunas ◽  
...  
Keyword(s):  
Thin Films ◽  
Wide Band ◽  
Deposition Process ◽  
Heteroepitaxial Growth ◽  
Electron Microscopic ◽  
Wide Band Gap ◽  
Lattice Matching ◽  
Different Types ◽  
Diamond Thin Films

Because of diamond’s wide band gap, high thermal conductivity, high breakdown voltage and high radiation resistance, there is a growing interest in developing diamond-based devices for several new and demanding electronic applications. In developing this technology, there are several new challenges to be overcome. Much of our effort has been directed at developing a diamond deposition process that will permit controlled, epitaxial growth. Also, because of cost and size considerations, it is mandatory that a non-native substrate be developed for heteroepitaxial nucleation and growth of diamond thin films. To this end, we are currently investigating the use of Ni single crystals on which different types of epitaxial metals are grown by molecular beam epitaxy (MBE) for lattice matching to diamond as well as surface chemistry modification. This contribution reports briefly on our microscopic observations that are integral to these endeavors.

scholarly journals Chemical Solution Deposition of La-Substituted BiFe0.5Sc0.5O3 Perovskite Thin Films on Different Substrates

Coatings ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 307
Author(s):  
Diana Griesiute ◽  
Dovydas Karoblis ◽  
Lina Mikoliunaite ◽  
Aleksej Zarkov ◽  
Andrei N. Salak ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Cost Effective ◽  
Deposition Process ◽  
Stability Study ◽  
Fused Silica ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Optimal Annealing Temperature ◽  
Xrd Patterns

In the present work, polycrystalline Bi0.67La0.33Fe0.5Sc0.5O3 thin films were synthesized using a simple and cost-effective chemical solution deposition process employing the spin coating technique. In order to check the feasibility of the fabrication of thin films on various types of substrates, the films were deposited on Pt-coated silicon, silicon, sapphire, corundum, fused silica and glass. Based on the results of thermogravimetric analysis of precursor and thermal stability study, it was determined that the optimal annealing temperature for the formation of perovskite structure is 600 °C. It was observed that the relative intensity of the pseudocubic peaks (001)p and (011)p in the XRD patterns is influenced by the nature of substrates, suggesting that the formed crystallites have some preferred orientation. Roughness of the films was determined to be dependent on the nature of the substrate.

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