Coplanar Capacitors with High Dielectric Constant BaSrTiO3 for Microwave Application

1999 ◽  
Vol 596 ◽  
Author(s):  
Wei Hu ◽  
Vladimir Fuflyigin ◽  
Jim Chi
Keyword(s):  
Dielectric Constant ◽  
High Dielectric Constant ◽  
Unit Area ◽  
Microwave Application ◽  
Bottom Interface ◽  
High Dielectric ◽  
The Cost ◽  
Very High ◽  
High Resonant Frequency ◽  
Mim Capacitors

AbstractA coplanar structure is shown to be free of the asymmetrical I-V characteristics normally observed in MIM capacitors with BST inter-electrode dielectric. The low barrier height at the bottom interface is found to be responsible for the asymmetry, which causes increased leakage current and reduced breakdown voltage in one bias polarity. These problems can be eliminated using a coplanar structure, which has been shown elsewhere to have a very low parasitic inductance and a very high resonant frequency. However, these improvements are realized at the cost of a four times reduction of capacitance per unit area.

Pulsed DC Magnetron Sputtered Rutile TiO2 films for next generation DRAM capacitors

2013 ◽  
Vol 1561 ◽  
Author(s):  
M.A Jithin ◽  
Lakshmi Ganapathi Kolla ◽  
Navakanta Bhat ◽  
S. Mohan ◽  
Yuichiro Morozumi ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
High Dielectric Constant ◽  
Low Dielectric Constant ◽  
Si Substrate ◽  
Capacitance Density ◽  
Low Dielectric ◽  
Pulsed Dc ◽  
High Dielectric ◽  
Mim Capacitors

ABSTRACTIn this study, synthesis and characterization of rutile-Titanium dioxide (TiO2) thin films using pulsed DC Magnetron Sputtering at room temperature, along with the fabrication and characterization of MIM capacitors have been discussed. XPS and RBS data show that the films are stoichiometric and have compositional uniformity. The influence of electrode materials on electrical characteristics of the fabricated MIM capacitors has been studied. The Al/TiO2/Al based capacitors show low capacitance density (9 fF/μm2) with low dielectric constant (K=25) and high EOT (3.67 nm) due to low dielectric constant TiO2 phase formation on Al/Si substrate. On the other hand, Ru/TiO2/Ru based capacitors show high capacitance density (49 fF/μm2) with high dielectric constant (K=130) and low EOT (0.7nm) values at high frequency (100 KHz) due to high dielectric constant phase (rutile) formation of TiO2, on Ru/Si substrate. Raman spectra confirm that the films deposited on Ru/Si substrate show the rutile phase.

Processing and the Microstructure of SrTiO3-Based Bl Capacitors using Pb(Fe, W)O3 Ferroelectrics

1989 ◽  
Vol 155 ◽  
Author(s):  
Makoto Kuwabara
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Grain Boundaries ◽  
Strontium Titanate ◽  
Barrier Layer ◽  
High Dielectric Constant ◽  
Ferroelectric Materials ◽  
New Type ◽  
High Dielectric ◽  
Very High

ABSTRACTA preliminary experiment was conducted to prepare semiconducting strontium titanate-based internal barrier layer capacitors with ferroelectric Pb(Fe, W)O3 forming insulating layers along the grain boundaries. Processing, microstructure and the dielectric properties of this new type of BL capacitors are described. The idea to obtain this type of BL capacitors with a very high dielectric constant may be realized when the ferroelectric materials can uniformly be diffused along the grain boundaries by using a more sophisticated processing of the second firing.

Enhancement of dielectric constant in a niobium doped titania system: an experimental and theoretical study

2016 ◽  
Vol 40 (11) ◽  
pp. 9526-9536 ◽  
Author(s):  
Balaji P. Mandal ◽  
P. Anithakumari ◽  
Sandeep Nigam ◽  
Chiranjib Majumder ◽  
Manoj Mohapatra ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Theoretical Study ◽  
High Dielectric Constant ◽  
Interfacial Effect ◽  
Complex Defect ◽  
Niobium Doped ◽  
Doped Titania ◽  
High Dielectric ◽  
Very High

A very high dielectric constant of Nb doped titania is observed due to both the interfacial effect and formation of complex defect dipoles.

Yield of free-ions in the radiolysis of formamide, a liquid of very high dielectric constant

1970 ◽  
Vol 48 (11) ◽  
pp. 1657-1663 ◽  
Author(s):  
D. A. Head ◽  
D. C. Walker
Keyword(s):  
Dielectric Constant ◽  
High Dielectric Constant ◽  
Solvated Electrons ◽  
Decomposition Products ◽  
Polar Liquids ◽  
Molecular Decomposition ◽  
Total Ionization ◽  
Free Ion ◽  
High Dielectric ◽  
Very High

Solutions of N2O in liquid formamide (dielectric constant 109) gave a yield of N2 during γ-radiolysis of G(N2) = 3.3 ± 0.3. Competition between N2O and other scavengers, including water, ethanol, acids, AgNO3, and CdI2 strongly resembled the pattern of reactivity characteristic of solvated electrons found in other polar liquids. Furthermore, the yield obtained (3.3) was consistent with the high dielectric constant and predicted for the free-ion yield by Freeman's model assuming a total ionization of 4.7. However, the absence of an absorption band in nanosecond pulse radiolysis experiments suggests that solvated electrons were not present 10−9 s after the passage of the ionizing radiation. It is quite possible that in this system "solvent anions" (or other reactive reducing ions) were formed in yield equal to the "free-ion" yield. This presupposes that formamide anions readily reduce N2O and Ag+, are inactivated by H+ and do not react with water and alcohols.The high dielectric constant apparently leads to large yields of comparatively long-lived (> 10−7 s) reducing ions (free-ion yield of 3.3) accompanied by rather small yields of H atoms and simple molecular decomposition products. In these respects the radiolysis decomposition of formamide resembles that of water.

Sign in / Sign up

Export Citation Format

Share Document