Microstrip-slot and coplanar waveguide-slot lines with very high dielectric constant substrates for application in high-speed optoelectronics

1994 ◽  
Vol 7 (18) ◽  
pp. 849-852 ◽  
Author(s):  
M. C. R. Carvalho ◽  
W. Margulis ◽  
J. R. Souza
Keyword(s):  
Dielectric Constant ◽  
High Speed ◽  
High Dielectric Constant ◽  
Coplanar Waveguide ◽  
Waveguide Slot ◽  
High Dielectric ◽  
Very High

Processing and the Microstructure of SrTiO3-Based Bl Capacitors using Pb(Fe, W)O3 Ferroelectrics

1989 ◽  
Vol 155 ◽  
Author(s):  
Makoto Kuwabara
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Grain Boundaries ◽  
Strontium Titanate ◽  
Barrier Layer ◽  
High Dielectric Constant ◽  
Ferroelectric Materials ◽  
New Type ◽  
High Dielectric ◽  
Very High

ABSTRACTA preliminary experiment was conducted to prepare semiconducting strontium titanate-based internal barrier layer capacitors with ferroelectric Pb(Fe, W)O3 forming insulating layers along the grain boundaries. Processing, microstructure and the dielectric properties of this new type of BL capacitors are described. The idea to obtain this type of BL capacitors with a very high dielectric constant may be realized when the ferroelectric materials can uniformly be diffused along the grain boundaries by using a more sophisticated processing of the second firing.

Enhancement of dielectric constant in a niobium doped titania system: an experimental and theoretical study

2016 ◽  
Vol 40 (11) ◽  
pp. 9526-9536 ◽  
Author(s):  
Balaji P. Mandal ◽  
P. Anithakumari ◽  
Sandeep Nigam ◽  
Chiranjib Majumder ◽  
Manoj Mohapatra ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Theoretical Study ◽  
High Dielectric Constant ◽  
Interfacial Effect ◽  
Complex Defect ◽  
Niobium Doped ◽  
Doped Titania ◽  
High Dielectric ◽  
Very High

A very high dielectric constant of Nb doped titania is observed due to both the interfacial effect and formation of complex defect dipoles.

Yield of free-ions in the radiolysis of formamide, a liquid of very high dielectric constant

1970 ◽  
Vol 48 (11) ◽  
pp. 1657-1663 ◽  
Author(s):  
D. A. Head ◽  
D. C. Walker
Keyword(s):  
Dielectric Constant ◽  
High Dielectric Constant ◽  
Solvated Electrons ◽  
Decomposition Products ◽  
Polar Liquids ◽  
Molecular Decomposition ◽  
Total Ionization ◽  
Free Ion ◽  
High Dielectric ◽  
Very High

Solutions of N2O in liquid formamide (dielectric constant 109) gave a yield of N2 during γ-radiolysis of G(N2) = 3.3 ± 0.3. Competition between N2O and other scavengers, including water, ethanol, acids, AgNO3, and CdI2 strongly resembled the pattern of reactivity characteristic of solvated electrons found in other polar liquids. Furthermore, the yield obtained (3.3) was consistent with the high dielectric constant and predicted for the free-ion yield by Freeman's model assuming a total ionization of 4.7. However, the absence of an absorption band in nanosecond pulse radiolysis experiments suggests that solvated electrons were not present 10−9 s after the passage of the ionizing radiation. It is quite possible that in this system "solvent anions" (or other reactive reducing ions) were formed in yield equal to the "free-ion" yield. This presupposes that formamide anions readily reduce N2O and Ag+, are inactivated by H+ and do not react with water and alcohols.The high dielectric constant apparently leads to large yields of comparatively long-lived (> 10−7 s) reducing ions (free-ion yield of 3.3) accompanied by rather small yields of H atoms and simple molecular decomposition products. In these respects the radiolysis decomposition of formamide resembles that of water.

scholarly journals Investigation of Grain Size Effect on the Impedance of CaCu3Ti4O12 from 100 Hz to 1 GHz of Frequency

2012 ◽  
Vol 620 ◽  
pp. 230-235 ◽  
Author(s):  
Muhammad Azwadi Sulaiman ◽  
Sabar Derita Hutagalung ◽  
Zainal Arifin Ahmad ◽  
Mohd Fadzil Ain
Keyword(s):  
Dielectric Constant ◽  
Barrier Layer ◽  
Room Temperature ◽  
High Dielectric Constant ◽  
Perovskite Phase ◽  
Wide Frequency Range ◽  
Treatment Temperature ◽  
Domain Boundaries ◽  
High Dielectric ◽  
Very High

CaCu3Ti4O12(CCTO) is a cubical perovskite phase and sintered ceramics exhibit very high dielectric constant at room temperature. The speculated origins of the high dielectric constant are the existence of insulative barrier layer at grain boundaries and domain boundaries which created an internal barrier layer capacitance (IBLC) at the microstructure of CCTO. The relation of grains and domains electrical resistance were studied in this work by using impedance spectroscopy (IS). A series of samples with different heat treatment temperature were tested to investigate their microstructure by using field emission scanning electron microscopy (FESEM). The grains and domains resistance was calculated from a wide frequency range of impedance complex plane measurement (100 Hz to 1 GHz). The FESEM and IS analyses showed the dependency of grains and domains resistance to average grains size of CCTO microstructure.

Coplanar Capacitors with High Dielectric Constant BaSrTiO3 for Microwave Application

1999 ◽  
Vol 596 ◽  
Author(s):  
Wei Hu ◽  
Vladimir Fuflyigin ◽  
Jim Chi
Keyword(s):  
Dielectric Constant ◽  
High Dielectric Constant ◽  
Unit Area ◽  
Microwave Application ◽  
Bottom Interface ◽  
High Dielectric ◽  
The Cost ◽  
Very High ◽  
High Resonant Frequency ◽  
Mim Capacitors

AbstractA coplanar structure is shown to be free of the asymmetrical I-V characteristics normally observed in MIM capacitors with BST inter-electrode dielectric. The low barrier height at the bottom interface is found to be responsible for the asymmetry, which causes increased leakage current and reduced breakdown voltage in one bias polarity. These problems can be eliminated using a coplanar structure, which has been shown elsewhere to have a very low parasitic inductance and a very high resonant frequency. However, these improvements are realized at the cost of a four times reduction of capacitance per unit area.

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