Measuring Bimodal Crystallographic Texture in Ferroelectric PbZrxTi1-x O3 Thin Films

1999 ◽  
Vol 596 ◽  
Author(s):  
Mark D. Vaudin ◽  
Glen R. Fox
Keyword(s):  
Thin Films ◽  
Volume Fraction ◽  
Random Access ◽  
Diffraction Method ◽  
X Ray Diffraction ◽  
Access Memory ◽  
X Ray ◽  
Pzt Film ◽  
Memory Applications ◽  
Random Powder

AbstractA powder x-ray diffraction method has been developed to quantify textured volume fractions in thin films. It has been applied to {111}, {100} and randomly oriented PbZrxTi1-xO3 in 200 nm thick films used for ferroelectric random access memory applications. The integrated and peak intensities of 100, 110, 200 and 222 Bragg peaks from an untextured PZT film were determined by applying a thickness correction to a θ–2θ scan obtained from random powder of the same composition as the film. X-ray scans were made on the same peaks from the PZT film specimens. The distributions of grain orientation for the {111} and {100} populations in the films were determined from ω scans which were obtained from the films using 100, 200 and 222 scattering angles and corrected for defocussing and absorption. To determine the total volume fraction of each population of grains, the ratios of the integrated film peak intensities to the corrected powder integrated peak intensities were multiplied by the integrals of the corrected ω scans.

X-ray diffraction analysis for thin films of PbTiO3-La2/3TiO3 prepared by the sol-gel method

1994 ◽  
Vol 9 (8) ◽  
pp. 2133-2137 ◽  
Author(s):  
Hideki Yoshioka
Keyword(s):  
Thin Films ◽  
Perovskite Phase ◽  
Sol Gel ◽  
Diffraction Method ◽  
Dip Coating ◽  
X Ray Diffraction ◽  
X Ray ◽  
Coating Methods ◽  
Diffraction Patterns ◽  
System 1

Thin films in the system (1 - x) PbTiO3−xLa2/3TiO3 were prepared by the sol-gel and dip-coating methods. Phases deposited in the films and the lattice parameters as a function of the composition were investigated by the x-ray diffraction method. The solid solutions with a perovskite structure were formed as a single phase with x up to 0.9. For the composition of x = 1.0, metastable La-Ti-O perovskite phase with a small amount of the impurity phase, La2Ti2O7, was obtained. Simulation of x-ray diffraction patterns based on the defect structure model shows that the structure of the La-Ti-O perovskite phase includes randomly distributed cation vacancies at the A-site, namely (La2/3□1/3)TiO3.

Preparation of PZT Ferroelectric Thin Films by Sol-Gel Process

2012 ◽  
Vol 204-208 ◽  
pp. 4207-4210 ◽  
Author(s):  
Yu Fei You ◽  
C. H. Xu ◽  
Jun Peng Wang ◽  
Yu Liang Liu ◽  
Jin Feng Xiao ◽  
...  
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
X Ray Diffraction ◽  
Pzt Ceramics ◽  
X Ray ◽  
Pzt Film ◽  
Sol Gel Process ◽  
Pzt Films ◽  
Pzt Ferroelectric Thin Films ◽  
Electronic Microscope

Sol-gel method is used for the formation of Pb(Zr0.63Ti0.37)O3(PZT) thin films. The initial films were formed with spin coating sol solution on silicon wafer and drying coated wet sol film at 300°C for 5min. This process was repeated for 1-4 times to obtain 4 initial films with different thicknesses. 4 initial films were annealed at 500°C for 2h to obtain PZT ceramics films. The morphologies of the surface and cross-section of PZT films were observed with a scanning electronic microscope (SEM). The phase structures of PZT films were analyzed using an X-ray diffraction meter (XRD). Experimental results show that PZT film prepared by coating wet sol on silicon once can be high smooth and compact film.

Electrodes and Barriers for Dram and Feram: Processing, Integration, and Fundamentals

2000 ◽  
Vol 655 ◽  
Author(s):  
K.L. Saenger ◽  
P.C. Andricacos ◽  
S.D. Athavale ◽  
J.D. Baniecki ◽  
C. Cabral ◽  
...  
Keyword(s):  
Electrode Materials ◽  
Random Access ◽  
Random Access Memory ◽  
X Ray Diffraction ◽  
Oxide Electrode ◽  
Access Memory ◽  
X Ray ◽  
Barrier Materials ◽  
The Stability ◽  
Density Dynamic

AbstractMaterials requirements for electrodes and barriers in high density dynamic random access memory (DRAM) and ferroelectric random access memory (FERAM) are reviewed, and some approaches to barrier materials and device geometries are described. Electrode/barrier topics covered in more detail include Pt reactivity with Si-containing barriers and dielectric overlayers, the application of a Bragg-Brentano x-ray diffraction technique to quantitatively probe Pt and Ir electrode morphology and thickness changes during ferroelectric processing, the stability of metal oxide electrode materials in reducing ambients, electrode patterning techniques (including Pt electroplating), and electrical properties of 3-D capacitors in 256k arrays as a function of top electrode annealing treatments.

Sol-gel derived Ba(Mg1/3Ta2/3)O3 thin films: Preparation and structure

1997 ◽  
Vol 12 (3) ◽  
pp. 596-599 ◽  
Author(s):  
Ji Zhou ◽  
Qing-Xin Su ◽  
K. M. Moulding ◽  
D. J. Barber
Keyword(s):  
Thin Films ◽  
Annealing Temperature ◽  
Volume Fraction ◽  
Sol Gel ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Sol Gel Process ◽  
Small Grains

Ba(Mg1/3Ta2/3)O3 thin films were prepared by a sol-gel process involving the reaction of barium isopropoxide, tantalum ethoxide, and magnesium acetate in 2-methoxyethanol and subsequently hydrolysis, spin-coating, and heat treatment. Transmission electron microscopy, x-ray diffraction, and Raman spectroscopy were used for the characterization of the thin films. It was shown that the thin films tend to crystallize with small grains sized below 100 nm. Crystalline phase with cubic (disordered) perovskite structure was formed in the samples annealed at a very low temperature (below 500 °C), and well-crystallized thin films were obtained at 700 °C. Although disordered perovskite is dominant in the thin films annealed below 1000 °C, a low volume fraction of 1 : 2 ordering domains was found in the samples and grows with an increase of annealing temperature.

(Ba,Sr)TiO3 thin films with conducting perovskite electrodes for dynamic random access memory applications

1999 ◽  
Vol 74 (21) ◽  
pp. 3194-3196 ◽  
Author(s):  
B. Nagaraj ◽  
T. Sawhney ◽  
S. Perusse ◽  
S. Aggarwal ◽  
R. Ramesh ◽  
...  
Keyword(s):  
Thin Films ◽  
Random Access ◽  
Random Access Memory ◽  
Dynamic Random Access Memory ◽  
Access Memory ◽  
Memory Applications
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