A High-Resolution Angle-Resolved Photoemission Study of the Temperature Dependent Electronic Structure of the Pentatelluride ZrTe5

1999 ◽  
Vol 590 ◽  
Author(s):  
D. N. McIlroy ◽  
Daqing Zhang ◽  
Bradley Kempton ◽  
J. Wharton ◽  
R. T. Littleton ◽  
...  
Keyword(s):  
Electronic Structure ◽  
High Resolution ◽  
Synchrotron Radiation ◽  
Symmetry Axis ◽  
High Symmetry ◽  
Temperature Dependent ◽  
Electron Band ◽  
Effective Masses ◽  
Band Dispersion ◽  
Photoemission Study

ABSTRACTThe temperature dependent band structure of the pentatelluride ZrTe5 has been examined using the technique of high-resolution angle-resolved photoemission in conjunction with synchrotron radiation. Specifically, the band dispersion along the X-Γ-X high symmetry axis was mapped at 20K (T<Tc) and 170K (T>Tc), where Tc≃160K. One electron band and two hole bands within 0.5eV of the Fermi level have been identified. The dispersion of the bands indicates that they have extremely small electron and hole effective masses. The hole bands were observed to distort and shift in energy upon raising the sample temperature above Tc, indicative of a surface distortion.

Evidence for Temperature-Dependent Electron Band Dispersion in Pentacene

2006 ◽  
Vol 96 (15) ◽  
Author(s):  
N. Koch ◽  
A. Vollmer ◽  
I. Salzmann ◽  
B. Nickel ◽  
H. Weiss ◽  
...  
Keyword(s):  
Temperature Dependent ◽  
Electron Band ◽  
Band Dispersion

High-resolution angle-resolved photoemission study of the Fermi surface and the normal-state electronic structure ofBi2Sr2CaCu2O8

1990 ◽  
Vol 42 (1) ◽  
pp. 381-386 ◽  
Author(s):  
C. G. Olson ◽  
R. Liu ◽  
D. W. Lynch ◽  
R. S. List ◽  
A. J. Arko ◽  
...  
Keyword(s):  
Electronic Structure ◽  
High Resolution ◽  
Fermi Surface ◽  
Normal State ◽  
Photoemission Study

3C-, 4H- and 6H-SiC Bulks Studied by Silicon K-Edge X-Ray Absorption

2013 ◽  
Vol 740-742 ◽  
pp. 573-576 ◽  
Author(s):  
Wei Zeng ◽  
Zhe Chuan Feng ◽  
Rui Sheng Zheng ◽  
Ling Yun Jang ◽  
Chee Wei Liu
Keyword(s):  
Electronic Structure ◽  
Fine Structure ◽  
High Resolution ◽  
Synchrotron Radiation ◽  
Angular Dependence ◽  
Comparative Studies ◽  
X Ray ◽  
Absorption Fine ◽  
X Ray Absorption

High-resolution synchrotron radiation X-ray absorption of Si K-edge have been employed to investigate 6H-, 4H- and 3C-SiC. Detailed analyses of the extended x-ray absorption fine structure are taken by using the IFEFFIT program, and significant results on the atomic bonding are obtained from these comparative studies. The x-ray absorption near-edge structures of the Si K-edge are investigated, and the electronic structure of 3C-, 4H- and 6H-SiC are studied. In order to investigate the angular dependence, the x-ray absorption near-edge spectra were operated at 55o and 90o of the angle between the surface and the X-ray direction.

High-resolution temperature-dependent photoemission study of Kondo semimetal CeNiSn

2000 ◽  
Vol 281-282 ◽  
pp. 286-287 ◽  
Author(s):  
Y Takeda ◽  
M Arita ◽  
K Shimada ◽  
H Sato ◽  
H Namatame ◽  
...  
Keyword(s):  
High Resolution ◽  
Temperature Dependent ◽  
Photoemission Study

Temperature-dependent high-resolution resonant photoemission study of Ce

2004 ◽  
Vol 351 (3-4) ◽  
pp. 256-258 ◽  
Author(s):  
Mitsuharu Higashiguchi ◽  
Kenya Shimada ◽  
Takamasa Narimura ◽  
Hirofumi Namatame ◽  
Masaki Taniguchi
Keyword(s):  
High Resolution ◽  
Temperature Dependent ◽  
Resonant Photoemission ◽  
Photoemission Study
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