High-resolution core-level photoemission study of CF4-treated Gd2O3(Ga2O3) gate dielectric on Ge probed by synchrotron radiation

2011 ◽  
Vol 98 (6) ◽  
pp. 062903 ◽  
2001 ◽  
Vol 280 (1-3) ◽  
pp. 150-155 ◽  
Author(s):  
Florence Jolly ◽  
François Rochet ◽  
Georges Dufour ◽  
Christoph Grupp ◽  
Amina Taleb-Ibrahimi

1981 ◽  
Vol 4 ◽  
Author(s):  
F.J. Himpsel ◽  
D.E. Eastman ◽  
P. Heimann ◽  
B. Reihl ◽  
C.W. White ◽  
...  

ABSTRACTWe have studied the valence band and surface-core-level states for laser-annealed, thermally-annealed, and cleaved Ge(111) and Si(l11) surfaces with high resolution photoelectronspectroscopy using synchrotron radiation. For the annealed surfaces we find two surface states near the top of the valence band as well as characteristic surface core level spectra. These indicate the existence of a common local bonding geometry for all these surfaces. We observe that the (1 × 1) and cleaved (2 × 1) surfaces are not related as recently reported for Si.


1991 ◽  
Vol 43 (17) ◽  
pp. 14301-14304 ◽  
Author(s):  
G. Le Lay ◽  
D. Mao ◽  
A. Kahn ◽  
Y. Hwu ◽  
G. Margaritondo

2007 ◽  
Vol 101 (4) ◽  
pp. 043516 ◽  
Author(s):  
Kenya Nakamura ◽  
Takaaki Mano ◽  
Masaharu Oshima ◽  
H. W. Yeom ◽  
Kanta Ono

2000 ◽  
Vol 463 (2) ◽  
pp. 102-108 ◽  
Author(s):  
Florence Jolly ◽  
François Rochet ◽  
Georges Dufour ◽  
Christoph Grupp ◽  
Amina Taleb-Ibrahimi

2006 ◽  
Vol 74 (11) ◽  
Author(s):  
M. Kuzmin ◽  
R. E. Perälä ◽  
P. Laukkanen ◽  
M. Ahola-Tuomi ◽  
I. J. Väyrynen

2008 ◽  
Vol 78 (19) ◽  
Author(s):  
Won Hoon Choi ◽  
Keun Su Kim ◽  
Han Woong Yeom

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