High-resolution core-level photoemission study of CF4-treated Gd2O3(Ga2O3) gate dielectric on Ge probed by synchrotron radiation
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2001 ◽
Vol 280
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pp. 150-155
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2007 ◽
Vol 19
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pp. 266006
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1991 ◽
Vol 43
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pp. 14301-14304
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