Investigation of Inhomogeneous In-Plane Strain Relaxation in Si/SiGe Quantum Wires by High Resolution x-ray Diffraction

1999 ◽  
Vol 590 ◽  
Author(s):  
Y. Zhuang ◽  
C. Schelling ◽  
T. Roch ◽  
A. Daniel ◽  
F. Schäffler ◽  
...  

ABSTRACTThe structural properties of Si/SiGe quantum wires, which were grown by local solid source molecular beam epitaxy through a Si3N4/SiO2 wire-like shadow mask, were investigated by means of high resolution x-ray coplanar and x-ray grazing incidence diffraction, as well as by transmission electron microscopy. High resolution x-ray coplanar diffraction was used to obtain the average in-plane strain in Si/SiGe wires before and after removing the Si3N4/SiO2 shadow mask. x-ray grazing incidence diffraction measurements were performed to obtain information on the shape of the wires and on the depth-dependent strain relaxation. A finite element method was used to calculate the strain distribution in the Si/SiGe wires and in the Si substrate which clearly show the influence of the Si3N4/SiO2 shadow masks on the strain status of the Si/SiGe wires in agreement with the experimental data.

1994 ◽  
Vol 375 ◽  
Author(s):  
J. L. Jordan-Sweet ◽  
P. M. Mooney ◽  
G. B. Stephenson

AbstractHigh-resolution x-ray diffraction is an excellent probe of strain relaxation in complex SiGe structures. The high flux provided by synchrotron sources enables us to make extensive reciprocal space map measurements and evaluate many samples. The diffraction peak positions of each layer in a step-graded structure, measured for two different reflections, yield quantitative values for the relaxation and alloy composition in the layer. Grazing-incidence diffraction allows us to determine the in-plane structure of very thin layers, which have thickness-broadened peaks at conventional diffraction geometries. We demonstrate the power of these techniques with two examples.


1993 ◽  
Vol 308 ◽  
Author(s):  
Paul R. Besser ◽  
Thomas N. Marieb ◽  
John C. Bravman

ABSTRACTStrain relaxation in passivated Al-0.5% Cu lines was measured using X-ray diffraction coupled with in-situ observation of the formation and growth of stress induced voids. Samples of 1 μm thick Al-0.5% Cu lines passivated with Si3N4 were heated to 380ºC, then cooled and held at 150ºC. During the test, principal strains along the length, width, and height of the line were determined using a grazing incidence x-ray geometry. From these measurements the hydrostatic strain in the metal was calculated and strain relaxation was observed. The thermal cycle was duplicated in a high voltage scanning transmission electron microscope equipped with a backscattered electron detector. The 1.25 μm wide lines were seen to have initial stress voids. Upon heating these voids reduced in size until no longer observable. Once the samples were cooled to 150ºC, voids reappeared and grew. The measured strain relaxation is discussed in terms of void and θ-phase (Al2Cu) formation.


2006 ◽  
Vol 39 (6) ◽  
pp. 871-877 ◽  
Author(s):  
Ying-Huang Lai ◽  
Ya-Sen Sun ◽  
U-Ser Jeng ◽  
Jhih-Min Lin ◽  
Tsang-Lang Lin ◽  
...  

A SWAXS (small- and wide-angle X-ray scattering) instrument was recently installed at the wiggler beamline BL17B3 of the National Synchrotron Radiation Research Center (NSRRC), Taiwan. The instrument, which is designed for studies of static and dynamic nanostructures and correlations between the nano (ormeso) structure (SAXS) and crystalline structure (WAXS), provides a flux of 1010–1011photon s−1at the sample at energies between 5 and 14 keV. With a SAXS area detector and a WAXS linear detector connected to two data acquisition systems operated in master–slave mode, the instrument allows one to perform time-resolved as well as anomalous scattering measurements. Data reduction algorithms have been developed for rapid processing of the large SWAXS data sets collected during time-resolved measurements. The performance of the instrument is illustrated by examples taken from different classes of ongoing projects: (i) time-resolved SAXS/WAXS/differential scanning calorimetry (DSC) with a time resolution of 10 s on a semicrystalline poly(hexamethylene terephthalate) sample, (ii) anomalous SAXS/WAXS measurements on a nanoparticulate PtRu catalyst, and (iii) grazing-incidence SAXS of a monolayer of oriented semiconductor quantum wires, and humidity-controlled ordering of Alamethicin peptides embedded in an oriented lipid membrane.


1993 ◽  
Vol 98 (2) ◽  
pp. 1754-1754
Author(s):  
I. M. Tidswell ◽  
T. A. Rabedeau ◽  
P. S. Pershan ◽  
S. D. Kosowsky ◽  
J. P. Folkers ◽  
...  

1999 ◽  
Vol 60 (4) ◽  
pp. 2516-2521 ◽  
Author(s):  
I. Kegel ◽  
T. H. Metzger ◽  
J. Peisl ◽  
J. Stangl ◽  
G. Bauer ◽  
...  

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