Energy Levels and Capture Cross-Sections of Thermal Donors in Silicon

1985 ◽  
Vol 59 ◽  
Author(s):  
A. Henry ◽  
J. L. Pautrat ◽  
N. Magnea ◽  
K. Saminadayar
Keyword(s):  
Electrical Properties ◽  
Temperature Dependence ◽  
Cross Sections ◽  
Infrared Absorption ◽  
Ionization Energy ◽  
Common Law ◽  
Energy Levels ◽  
Detailed Examination ◽  
Capture Cross ◽  
Capture Cross Sections

ABSTRACTThe electrical properties of thermal donors centers, generated after annealing CZ-silicon at 450° C are carefully evaluated. The energy levels are corrected for the Poole-Frenkel lowering are compared to the ionization energy of the dominant centers revealed by infrared absorption experiments. The capture cross sections are found to be ≈ 2 × 10-12 cm2 for TDI and ≈ 2 × 10-13 cm2 for TD2. Detailed examination of their temperature dependence reveals that they follow a common law σ α T-5.

scholarly journals The Electronic States of Some Metal Impurities in Germanium

1982 ◽  
Vol 35 (1) ◽  
pp. 53 ◽  
Author(s):  
SJ Pearton
Keyword(s):  
Electrical Properties ◽  
Cross Sections ◽  
Energy Levels ◽  
Electronic States ◽  
Capture Cross ◽  
Deep Impurity ◽  
Impurity States ◽  
Metal Impurities ◽  
Capacitance Spectroscopy ◽  
Capture Cross Sections

Capacitance spectroscopy measurements of the energy levels and majority carrier capture cross sections of deep impurity states associated with S, Zn, Pb and Bi in Ge are presented. Similarities in the electrical properties of these elements with other deep impurities in Ge are discussed.

scholarly journals Defective States in Micro-Crystalline CsPbBr3 and Their Role on Photoconductivity

Nanomaterials ◽  
2019 ◽  
Vol 9 (2) ◽  
pp. 177 ◽  
Author(s):  
Mara Bruzzi ◽  
Fabio Gabelloni ◽  
Nicola Calisi ◽  
Stefano Caporali ◽  
Anna Vinattieri
Keyword(s):  
Cross Sections ◽  
Dark Current ◽  
Room Temperature ◽  
Energy Levels ◽  
Constant Density ◽  
Capture Cross ◽  
Defect Tolerance ◽  
Thermally Stimulated Current ◽  
Temperature Range ◽  
Capture Cross Sections

Intrinsic defects in CsPbBr3 microcrystalline films have been studied using thermally stimulated current (TSC) technique in a wide temperature range (100–400 K). Below room temperature, TSC emission is composed by a set of several energy levels, in the range 0.11–0.27 eV, suggesting a quasi-continuum distribution of states with almost constant density. Above room temperature, up to 400 K, the temperature range of interest for solar cells, both dark current and photocurrent, are mainly dominated by energy levels in the range 0.40–0.45 eV. Even if measured trap densities are high, in the range 1013–1016 cm−3, the very small capture cross-sections, about 10−26 m2, agree with the high defect tolerance characterizing this material.

Sign in / Sign up

Export Citation Format

Share Document