A Perspective on Nitrogen in Silicon

1985 ◽  
Vol 59 ◽  
Author(s):  
Herman J. Stein
Keyword(s):  
Solid Solubility ◽  
Periodic Table ◽  
Light Impurities ◽  
Equilibrium Solid Solubility

This is the first symposium to explicitly include nitrogen in discussions on nondopant light impurities in Si. Ordering of the impurity listing (oxygen, carbon, hydrogen and nitrogen) deserves examination. It is obvious that the impurities are not listed alphabetically nor are they listed in the order they appear in the periodic table. Presumably the ordering does not simply reflect a bias of the organizing chairmen. The impurities are, in fact, listed in an order of recognition on a chronological scale of their importance in Si technology. Equilibrium solid solubility for the different impurities, as well as concentrations of the impurities in the processing environment, probably determined the chronology. Based upon published literature, the importance of oxygen was recognized in the mid 50's, carbon in the mid 60's and hydrogen in the mid 70's. Now in the mid 80's nitrogen is receiving increased attention as an impurity in Si.

scholarly journals Equilibrium solid solubility of Mg in aluminum below 523 K.

2002 ◽  
Vol 52 (5) ◽  
pp. 210-215 ◽  
Author(s):  
Hidetaka AMANO ◽  
Shin-ya KOMATSU ◽  
Masahiko IKEDA ◽  
Tomohiro KOHMOTO
Keyword(s):  
Solid Solubility ◽  
Equilibrium Solid Solubility

Study of Metastable Fe-W Films

1981 ◽  
Vol 7 ◽  
Author(s):  
Gerhard Göltz ◽  
Rouel Fernandez ◽  
Marc-A. Nicolet ◽  
Devendra K. Sadana
Keyword(s):  
Thermal Annealing ◽  
Solid Solubility ◽  
Room Temperature ◽  
Vacuum Annealing ◽  
Lattice Structure ◽  
Metastable States ◽  
Low Doses ◽  
High Doses ◽  
Sputter Deposited ◽  
Equilibrium Solid Solubility

ABSTRACTXenon irradiation of Fe-W multilayers at room temperature (R.T.) can produce two types of metastable states: low doses (< 1 × 1016 Xe/cm2 ) extend the equilibrium solid solubility of W in Fe and vice versa, maintaining the equilibrium b.c.c. lattice structure of Fe and W; at high doses (> 1 × 1016 Xe/ cm2 ) and in the vicinity of the composition Fe70W30, amorphization can occur. In comparison, RF sputter-deposited FexWl-x films were amorphous over the whole range (0.35<x < 0.79) investigated. The recrystallization temperatures of these amorphous layers exceed 600°C for 15 min vacuum annealing. Whereas Fe-W compounds always form during thermal annealing, these compounds are normally not found after Xe-irradiation of multilayers.

Optimisation of Junctions formed by Solid Phase Epitaxial Regrowth for sub-70nm CMOS

2002 ◽  
Vol 717 ◽  
Author(s):  
Richard Lindsay ◽  
Bartlomiej J. Pawlak ◽  
Peter Stolk ◽  
Karen Maex
Keyword(s):  
Solid Solubility ◽  
Laser Annealing ◽  
Solid Phase ◽  
Epitaxial Regrowth ◽  
Dopant Profile ◽  
Integration Problems ◽  
P Type ◽  
Reduced Mobility ◽  
Spike Annealing ◽  
Equilibrium Solid Solubility

AbstractFor the 70nm CMOS node, it is anticipated that conventional implantation and spike annealing approaches, even with pre-amorphisation and co-implantation, are unlikely to provide pMOS junctions consistent with the ITRS requirements. Here the junction performance is limited by equilibrium solid solubility.As laser annealing and in-situ doping techniques currently have unsolved integration problems, there is a renewed interest in using solid phase epitaxial regrowth (SPER) to form ultra-shallow metastable junctions. Such junctions have the potential to have an active dopant profile similar to the as-implanted profile. This offers above equilibrium solid solubility and abrupt profiles compatible with 70nm and even 45nm nodes. However there are concerns about residual defects, deactivation, diffusion and uniformity.In this paper we show how the Ge, F and B implant and SPER anneal can be optimised for abrupt, uniform and highly activated B junctions. There is latitude for higher doses and energies than conventional implants, however results show that this may lead to clustering causing enhanced deactivation and reduced mobility. We give attention to the probing issues involved in characterising partially annealed junctions.With this approach, p-type junctions having a sheet resistance of 265 ohms/sq and depth of 22nm are realised which are compatible with 70nm and potentially 45nm CMOS nodes.

scholarly journals Equilibrium solid solubility of nickel to aluminum re-investigated by resistometry

2007 ◽  
Vol 57 (4) ◽  
pp. 157-162
Author(s):  
Yuki IWASAKI ◽  
Yoshihiro KATAYAMA ◽  
Shin-ya KOMATSU ◽  
Hiroyuki AMANO
Keyword(s):  
Solid Solubility ◽  
Equilibrium Solid Solubility

scholarly journals Solubility of Carbon in Nanocrystalline -Iron

2012 ◽  
Vol 2012 ◽  
pp. 1-4 ◽  
Author(s):  
Alexander Kirchner ◽  
Bernd Kieback
Keyword(s):  
Grain Size ◽  
Grain Boundary ◽  
Size Effect ◽  
Thermodynamic Model ◽  
Solid Solubility ◽  
Local Variation ◽  
Carbon Solubility ◽  
Nonlinear Relation ◽  
Nanocrystalline Iron ◽  
Equilibrium Solid Solubility

A thermodynamic model for nanocrystalline interstitial alloys is presented. The equilibrium solid solubility of carbon in -iron is calculated for given grain size. Inside the strained nanograins local variation of the carbon content is predicted. Due to the nonlinear relation between strain and solubility, the averaged solubility in the grain interior increases with decreasing grain size. The majority of the global solubility enhancement is due to grain boundary enrichment however. Therefore the size effect on carbon solubility in nanocrystalline -iron scales with the inverse grain size.

Multislice calculations for quasi-periodic and non-periodic objects

1990 ◽  
Vol 48 (4) ◽  
pp. 138-139
Author(s):  
R. Herrera ◽  
A. Gómez
Keyword(s):  
Electron Diffraction ◽  
Computer Simulations ◽  
Periodic Table ◽  
Amorphous Materials ◽  
Space Group ◽  
Essential Step ◽  
Shape Effects ◽  
Atomic Scattering ◽  
Diffraction Patterns ◽  
Periodic Continuation

Computer simulations of electron diffraction patterns and images are an essential step in the process of structure and/or defect elucidation. So far most programs are designed to deal specifically with crystals, requiring frequently the space group as imput parameter. In such programs the deviations from perfect periodicity are dealt with by means of “periodic continuation”.However, for many applications involving amorphous materials, quasiperiodic materials or simply crystals with defects (including finite shape effects) it is convenient to have an algorithm capable of handling non-periodicity. Our program “HeGo” is an implementation of the well known multislice equations in which no periodicity assumption is made whatsoever. The salient features of our implementation are: 1) We made Gaussian fits to the atomic scattering factors for electrons covering the whole periodic table and the ranges [0-2]Å−1 and [2-6]Å−1.

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