Photo-Induced Current Spectroscopy in Undoped Cvd Diamond Films

1999 ◽  
Vol 588 ◽  
Author(s):  
E. Borchi ◽  
M. Bruzzi ◽  
L. Lombardi ◽  
D. Menichelli ◽  
S. Miglio ◽  
...  
Keyword(s):  
Energy Range ◽  
Cross Sections ◽  
Collection Efficiency ◽  
Diamond Films ◽  
Continuous Distribution ◽  
Cvd Diamond ◽  
Induced Current ◽  
Charge Collection Efficiency ◽  
Trap Levels ◽  
Capture Cross Sections

AbstractCombined TSC and PICTS measurements have been used to determine the activation energies (Et) and capture cross-sections (σ) of the trap levels inside the bandgap of CVD diamond in the energy range 0.4−0.7 eV. High temperature TSC analysis has been performed to determine the trap parameters in the energy range from 0.9 to 1.3 eV. A fieldmap in the Et−σ plane has been obtained from the combination of the TSC and PICTS data depicting the regions corresponding to two isolated trap levels and to a continuous distribution of states. The concentrations of defects have been calculated from the TSC signals and the measurement of the charge collection efficiency of the diamond samples.

About Homogeneity of CVD Diamond Nuclear Particles Detectors

1995 ◽  
Vol 416 ◽  
Author(s):  
C. Manfredotti ◽  
F. Fizzotti ◽  
P. Polesello ◽  
E. Vittone ◽  
M. Jaksic ◽  
...  
Keyword(s):  
Collection Efficiency ◽  
Diamond Films ◽  
Morphological Structure ◽  
Cvd Diamond ◽  
Optical Microscope ◽  
Columnar Structure ◽  
Charge Collection ◽  
Charge Collection Efficiency ◽  
Large Charge

ABSTRACTCVD diamond films show both at optical microscope and at SEM a quasi-columnar structure, not homogeneously distributed in the bulk which is agreed to be responsible for the relatively large charge collection lengths measured in the material. In this work, we present the first data on charge collection efficiency distributions as measured directly in the bulk by a 3 Meν proton microbeam. The results indicate that the material is really non-homogeneous, that only few columns are really connecting both electrodes and that, finally, a real connection exists between the morphological structure and the maps of collection efficiency distribution.

Investigation of a-Si:H p-i-n Solar Cell Degradation

1996 ◽  
Vol 420 ◽  
Author(s):  
Franc Smole ◽  
Aleč Groznik ◽  
Marko Topič ◽  
Pavle Popović ◽  
Jože Furlan
Keyword(s):  
Cross Sections ◽  
Collection Efficiency ◽  
Forward Bias ◽  
Capture Cross ◽  
Front Part ◽  
Dangling Bond ◽  
Defect States ◽  
Voltage Dependent ◽  
Numerical Simulator ◽  
Capture Cross Sections

AbstractBased on measured characteristics of degraded p-i-n structures, simulations of degraded structures were performed using our numerical simulator ASPIN in order to fit and explain pronounced hump-shaped voltage-dependent internal collection efficiency (ICE) characteristics under weak short-wavelength illumination. Agreement with measured hump-shaped ICE characteristics was obtained only if in addition to the introduction of light-induced dangling bond defect states, their capture cross-sections were also increased, in particular capture crosssection for the charged defect states. This causes a change in occupancy of defect states at the p-i interface and front part of the i-layer under forward bias. Consequently, it increases the electric field in the front part of the cell, which results in recovery of the ICE.

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