Cathodoluminescence from Inx Ga1−x as Layers Grown on GaAs Using a Transmission Electron Microscope

1999 ◽  
Vol 588 ◽  
Author(s):  
N. Yamamoto ◽  
T. Mita ◽  
S. Heun ◽  
A. Franciosi ◽  
J.-M. Bonard
Keyword(s):  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Strong Line ◽  
Wavelength Shift ◽  
Misfit Dislocations ◽  
Ion Milling ◽  
Thin Sample ◽  
Dark Line ◽  
Linear Features ◽  
Transmission Electron

AbstractInxGa1−xAs epilayers grown on GaAs(100) were studied by cathodoluminescence (CL) spectroscopy and imaging technique with 0.8 nm spectral resolution, using a transmission electron microscope. Linear features appear in the monochromatic CL image taken by the emission from the InxGa1−x.As layers, and do not appear in those from the GaAs layers. There is no direct correlation between the dark-line contrast in the panchromatic CL image (due to misfit dislocations) and the strong line contrast in the monochromatic CL images of the InxGa1−xAs layers. A peak wavelength shift in the CL spectrum was observed as the electron probe was moved across the linear features. The linear features also appear in a thin sample where the misfit dislocations are removed by ion milling, which clearly reveals that the strong line contrast is not directly due to the misfit dislocation. From those results the linear features in the monochromatic CL image are considered to be due to compositional fluctuations of the In concentration in the InxGa1−xAs layer.

Nanostructure Manipulation Device for Transmission Electron Microscopy: Application to Titania Nanoparticle Chain Aggregates

2002 ◽  
Vol 8 (6) ◽  
pp. 497-501 ◽  
Author(s):  
Yong J. Suh ◽  
Sergey V. Prikhodko ◽  
Sheldon K. Friedlander
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Microscope ◽  
Physical Properties ◽  
Transmission Electron Microscope ◽  
Initial Length ◽  
Ion Milling ◽  
Transmission Electron ◽  
Titania Nanoparticle ◽  
Chain Aggregates

Experimental difficulties in studying nanostructures stem from their small size, which limits the use of traditional techniques for measuring their physical properties. We have developed a nanostructure manipulation device to apply tension to chain aggregates mounted in a transmission electron microscope. A 1-mm-long slit was cut in the center of a lead–tin alloy disc, measuring 3 mm in diameter and 200 μm in thickness. The disc was heated to about 140°C before it was pressed between two quartz slides. The disc was then thinned by mechanical dimpling and ion milling until holes developed around the slit. The edges of the slit were 0.2 to 3 μm in thickness while the gap between them was up to a few microns. This disc was bonded to the two plates of a cartridge. The slit could be widened or narrowed at controlled speeds of 0.5 to 300 nm/s. The system was tested using titania (TiO2) nanoparticle chain aggregates (NCA) deposited across the slit. The ends of the NCA remained attached to the edges of the slit, which was widened at about 0.7 nm/s. In this way, the NCA was stretched up to 176% of its initial length before breaking.

Transmission electron microscope observation of diamond / WC interface

1996 ◽  
Vol 54 ◽  
pp. 700-701
Author(s):  
Geun-Hong Kim ◽  
Chang-Hwan Chun
Keyword(s):  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Cutting Tool ◽  
Nucleation And Growth ◽  
Interfacial Stress ◽  
Electron Microscope Observation ◽  
Ion Milling ◽  
Cross Sectional ◽  
Transmission Electron Microscope Observation ◽  
Transmission Electron

Commercial diamond coated WC-Co cutting tool has been investigated by transmission electron microscope (TEM) to understand the nucleation and growth of diamond on WC substrate. Cross-sectional specimens have been prepared by mechanical polishing followed by ion milling. TEM observations have been performed using analytical TEM, JEM 4000FX (JEOL Ltd.).The surface of the coated diamond is composed of grains of 2 - 5 μm in diameter. Each main grain is formed by columnar subgrains of 10 - 50 nm in diameter with similar orientations. Cobalt, a binder in cemented carbide, within 5 μm in depth from the carbide surface has been found to be removed to increase the adhesion of diamond.One of diamond subgrains, which has been grown large in [001] orientation on WC grains is shown in Fig. 1. High density of twins are found on (111) plane starting from WC grain boundaries. It is thought that the interfacial stress between diamond layer and WC grains is accommodated by these twins.

A Study of FeAl/AlAs/GaAs Interfaces Using Moiré-Fringe Contrast in a Transmission Electron Microscope

1990 ◽  
Vol 202 ◽  
Author(s):  
J. E. Angelo ◽  
J.N. Kuznia ◽  
A.M. Wowchak ◽  
P. I. Cohen ◽  
W. W. Gerberich
Keyword(s):  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Growth Temperature ◽  
Growth Mode ◽  
Misfit Dislocations ◽  
Layer By Layer ◽  
Plan View ◽  
Transmission Electron ◽  
Moire Fringe ◽  
Moiré Fringe

ABSTRACTThis paper describes the transmission electron microscope (TEM) investigations of the defect structure present at various FeAl/AlAs/GaAs interfaces. Although a systematic study has not yet been completed it is shown that by changing the growth temperature from 200°C to 300°C the growth morphology changes significantly. In-situ RHEED studies show the growth mode changes from layer-by-layer to island-like when the growth temperature is increased. TEM in both plan-view and cross-sectional modes is used to confirm these results. It is found that by increasing the growth temperature from 200°C to 300°C the growth mode switches from layer-by-layer (2D) with a continuous FeAl film, to island-like (3D) with significant numbers of “pin-holes”. A Moiré-fringe analysis is applied to determine the Burgers vector of the misfit dislocations. In both cases the interface between the FeAl and AlAs consists of a grid of misfit dislocations with [100] and [010] line directions whose Burgers vectors are [010] and [100] respectively.

Preparation of Cross-Sectional TEM Samples of Fe-Zn Couples

1991 ◽  
Vol 254 ◽  
Author(s):  
L. A. Giannuzzi ◽  
P. R. Howell ◽  
H. W. Pickering ◽  
W. R. Bidter
Keyword(s):  
Electron Microscope ◽  
Liquid Nitrogen ◽  
Cross Section ◽  
Transmission Electron Microscope ◽  
Preparation Technique ◽  
Ion Milling ◽  
Tem Analysis ◽  
Cross Sectional ◽  
Cold Stage ◽  
Transmission Electron

AbstractA preparation technique for the production of cross-sectional transmission electron microscope (TEM) samples from the interdiffusion regions of Fe-Zn binary couples is described. To alleviate the problem of unequal ion milling rates between the Fe and Zn, a 0.75mm thick Fe sheet has been double plated with a thick electrodeposited Zn coating to achieve a total couple thickness of ˜3mm. After slicing the couple in cross-section, the Fe region of the sample is dimpled to perforation near the Fe-Zn interface. Final thinning for TEM analysis is obtained by ion milling using a liquid nitrogen cold stage and sector speed control. The ion milling procedure is stopped when the perforated hole in the Fe-side of the couple extends through the faster eroding Zn-side of the interface. This technique, in modified form, is expected to be suitable for commercial steels coated with Zn-based alloys.

Focused Ion Beam Sectioning and Lift-out Method for Copper and Resist Vias in Organic Low-k Dielectrics

2002 ◽  
Vol 8 (6) ◽  
pp. 502-508 ◽  
Author(s):  
E.J. Crawford ◽  
L. Gignac ◽  
K. Barth ◽  
J. Petrus ◽  
E. Levine
Keyword(s):  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Scanning Transmission Electron Microscope ◽  
Sem Analysis ◽  
Ex Situ ◽  
Ion Milling ◽  
Transmission Electron ◽  
Low K

The focused ion beam lift-out technique for scanning electron microscope (SEM) and transmission electron microscope (TEM) sample preparation was shown to be applicable to copper/low-k dielectric semiconductor technology. High resolution SEM, TEM, and scanning transmission electron microscope analyses were performed on metal contacts and resist vias with no evidence of the interface damage or metal smearing commonly observed with mechanical polishing. Ion milling of the sample ex situ to the substrate provided decoration and adjustment of the exposed plane of the section when necessary for SEM analysis.

A Reproducible Selective Stain for Cardiac Sarcoplasmic Reticulum

1974 ◽  
Vol 32 ◽  
pp. 214-215
Author(s):  
R. A. Waugh ◽  
J. R. Sommer
Keyword(s):  
Complex System ◽  
Electron Microscope ◽  
Sarcoplasmic Reticulum ◽  
Transmission Electron Microscope ◽  
Electron Microscopic ◽  
Cardiac Sarcoplasmic Reticulum ◽  
Transmission Electron

Cardiac sarcoplasmic reticulum (SR) is a complex system of intracellular tubules that, due to their small size and juxtaposition to such electron-dense structures as mitochondria and myofibrils, are often inconspicuous in conventionally prepared electron microscopic material. This study reports a method with which the SR is selectively “stained” which facilitates visualizationwith the transmission electron microscope.

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